diode 14512 H
Abstract: buz23 IC 14511
Text: aaD D • as35bQ5 88D qgihsio 14510 D a hsieg 1 ~ ' 3 * ? '/ / BUZ 23 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case K>8 h ^OS on = 100 V - 10 A
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as35bQ5
C67078-A1002-A2
fl235b05
diode 14512 H
buz23
IC 14511
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Siemens Halbleiter
Abstract: No abstract text available
Text: SIEMENS ICs for Communications 1-Chip Car Radio TUA 4306 Specification 16.3.99 • I aS35bGS 0 1 3 7 ^ 535 ■ Edition 16.3.99 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, Balanstraße 73, 81541 München Siem ens AG 1995. All Rights Reserved.
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aS35bGS
053SbDS
fiS35b05
fl235bG5
Siemens Halbleiter
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3TF SIEMENS
Abstract: IC 14511 diode 14512 H 3TF-11 SIEMENS BUZ23 SIEMENS C67078-A1002-A2 BUZ23
Text: aaD D • as35bQ5 q g i h s i o a h s i e g 14510 D 1~' 3 * ? ' / / 88D BUZ 23 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case K>8 = 100 V - 10 A
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as35bQ5
C67078-A1002-A2
fl23SbOS
QQ14514
fl535b05
Q0m515
i45Ts"
3TF SIEMENS
IC 14511
diode 14512 H
3TF-11 SIEMENS
BUZ23 SIEMENS
C67078-A1002-A2
BUZ23
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siemens sab 82532
Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
235b05
82532N-10.
00702fl2
siemens sab 82532
82258
SA 82532
SAB 80286
csc 2323
sab80286
STT 3 SIEMENS
80286 microprocessor pin out diagram
ESCC2
siemens sab 82525
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Untitled
Abstract: No abstract text available
Text: Electrical Characteristics SIEM ENS 5 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values Unit Voltage on any pin with respect to ground Vs - 0.4 to V Am bient temperature under bias Ta O to 70 Storage temperature 7stg - 6 5 to 125
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P-LCC-44-1
fl235b
Db4b01
P-MQFP-64-1
fl235bG5
0Gb4fci02
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B34 SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE jg smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE XI SMD marking B34 TLE4278G TLE4278 AED01546 AEP02113 SD 4278
Text: SIEMENS flE3SbOS □□'ìbfc.fig LSI 5-V Low -D rop Fixed V oltage R egulator TL E 4 278 G Preliminary Data Features • • • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Separated reset and watchdog output
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P-DSO-14-4
Q0700fj-At)
fi23Sfc
TLE4278G
35t01s
2l14x
B34 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd TRANSISTOR code marking wL
TRANSISTOR SMD MARKING CODE XI
SMD marking B34
TLE4278G
TLE4278
AED01546
AEP02113
SD 4278
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 1550 nm Laser in Coaxial Package with SM-Pigtail, Medium Power STM 81004X STM 81005X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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81004X
81005X
81004G
STM81004A
81005G
1005A
Q62702-PXXXX
Q62702-PXXXX
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Transistor BFR 97
Abstract: bfr 49 transistor BFR34A
Text: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1
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Q62702-F346-S1
A23Sb05
D0b7270
Transistor BFR 97
bfr 49 transistor
BFR34A
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siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
fl23Sb05
siemens sab 82538
3tb siemens
T-0657
SiEMENS PM 350 98
SAB 80188
QD70
SIEMENS ESCC8
1fa MARKING
processor hbt 00 04 g
Q67100-H6441
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as35b
Abstract: LM35 Precision Centigrade Temperature Sensors ci AS35DN as35 fan speed control using lm35 LM35 Precision Centigrade Temperature Sensors LM35 application circuits with AS35AT AS35CAT AS35CN
Text: Precision Centigrade Tem perature Sensor FEATURES • • • • • • • • • Linear +10.0mv/°C Scale Factor 0.5°C Accuracy Guaranteeable at +25°C Calibrated Directly In ° Celsius (Centigrade) Operates From 4V to 30V Less Than 60|iA Current Drain
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transistor DA3 307
Abstract: transistor DA3 309 HC-49/transistor DA3 307 DA3 307
Text: • fl235bDS 0 0 8 1 4 4 4 5T1 SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
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fl235bDS
BTS412B2
as35bos
412B2
transistor DA3 307
transistor DA3 309
HC-49/transistor DA3 307
DA3 307
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C
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Q62702-F102
OT-23
IS21el2
IS21/S
aS35bG5
Giai71b
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kd smd transistor
Abstract: No abstract text available
Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated
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28N03L
SPD28N03L
Q67040-S4139-A2
P-T0252
P-T0251-3-1
Q67040-S4142-A2
SPU28N03L
S35bG5
Q133777
SQT-89
kd smd transistor
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Untitled
Abstract: No abstract text available
Text: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!
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BFG19S
Q62702-F1359
OT-223
Uni-0-01
fl235bD5
D1517SÃ
IS21I2
900MHz
aS35bD5
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d1117
Abstract: AES02079 AEB02072
Text: S IEM EN S TrilithIC BTS 771 Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low Rds on @ 25 °C: High-side switch: typ. 85 mQ,
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H35bD5
P-DSO-28-9
gps05123
E35b05
d1117
AES02079
AEB02072
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kp 72
Abstract: No abstract text available
Text: ,•— Infineon technologies Surface Mount Piezoresistive Silicon Absolute Pressure Sensor KP 202-R/RK KP 203-R/RK Preliminary Features • • • • • High sensitivity and linearity Fast response Very small dimensions Low cost Produced in qualified semiconductor
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202-R/RK
203-R/RK
202-R
202-R
203-R
203-R
203-RK
202-RK
013M5I0
217tective
kp 72
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Untitled
Abstract: No abstract text available
Text: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n
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70N10L
SPP70N10L
SPB70N10L
P-T0220-3-1
Q67040-S4175
P-T0263-3-2
Q67040-S4170
S35bQ5
Q133777
SQT-89
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration
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900MHz
Q62702-F1491
OT-323
fl235bGS
D1220Ã
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Untitled
Abstract: No abstract text available
Text: PMB 2306R/PMB 2306T SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 O v erv ie w .3 F eatures. 3
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2306R/PMB
2306T
P-DSO-14-1
P-DSO-14-1
35x45'
SSH14X
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Untitled
Abstract: No abstract text available
Text: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be
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64-bit/s
128-kbit/s
IA-BIDfCl80x
1A-BID180x
0235b05
54CC2
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Untitled
Abstract: No abstract text available
Text: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current
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SIS0005Â
Q67041-S4028
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-06W A1/A2 JZL III ET Cl C2 CHMT1I
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25-04W
25-06W
Q62702-
OT-323
25-05W
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Untitled
Abstract: No abstract text available
Text: SIEMENS Standard EEPROM ICs SLx 24C08/16 8/16 Kbit 1024/2048 x 8 bit Serial CM O S-EEPRO M with I2C Synchronous 2-Wire Bus D atasheet 1998-07-27 ÖHBSbQS O l l W S TSS I SLx 24C08/16 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page
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24C08/16
A23SbD5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 196W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£i, Ft2=22kf2 PI tr n r Marking Ordering Code Pin Configuration BCR 196W WXs UPON INQUIRY 1=B Package o II
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22kf2)
OT-323
BCR196W
fl235b05
235b05
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