AS081C100W
Abstract: No abstract text available
Text: AS081C100W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 100 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package
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AS081C100W
AS081C100W
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AS081C60W
Abstract: No abstract text available
Text: AS081C60W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 60 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package
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AS081C60W
AS081C60W
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AS081C40W
Abstract: No abstract text available
Text: AS081C40W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 40 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package
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AS081C40W
AS081C40W
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AS081C320W
Abstract: No abstract text available
Text: AS081C320W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 320 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package
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AS081C320W
AS081C320W
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AS081C480W
Abstract: No abstract text available
Text: AS081C480W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 480 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package
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AS081C480W
AS081C480W
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AS081C200W
Abstract: No abstract text available
Text: AS081C200W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 200 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package
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AS081C200W
AS081C200W
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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Untitled
Abstract: No abstract text available
Text: A D C 1 0731 ,A D C 1 0 7 3 2 , A D C 1 0 7 3 4 , A D C 1 0 7 3 8 A D C 10731/AD C 10732/AD C 10734/AD C 10738 10-Bit Plus Sign Serial I/O A/D Converters with Mux, Sam ple/Hold and Reference T ex a s In s t r u m e n t s Literature Number: SN AS081C a l Semiconductor
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10731/AD
10732/AD
10734/AD
10-Bit
AS081C
ADC10731,
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