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Microchip Technology Inc APTGF50X60T3G IGBT MODULE 600V 65A 250W SP3
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Microchip Technology Inc	APTGF50X60T3G					1 $175.25 10 $175.25 100 $130.19 1000 $100.15 10000 $88.13	Buy Now
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APTGF50X60T3G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
APTGF50X60T3G		Microsemi	IGBTs - Modules, Discrete Semiconductor Products, IGBT MODULE NPT 3PH BRIDGE SP3		Original	PDF

APTGF50X60T3G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: APTGF50X60T3G 3 Phase bridge NPT IGBT Power Module 15 VCES = 600V IC = 50A* @ Tc = 80°C Application • Motor control 31 16 19 20 23 29 25 30 18 11 10 14 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC	Original	PDF	APTGF50X60T3G
400v 50A Transistor Abstract: APTGF50X60T3G APT0406 APT0502 Text: APTGF50X60T3G 3 Phase bridge NPT IGBT Power Module 15 VCES = 600V IC = 50A* @ Tc = 80°C Application • Motor control 31 16 19 20 23 29 25 30 18 11 10 14 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC	Original	PDF	APTGF50X60T3G 400v 50A Transistor APTGF50X60T3G APT0406 APT0502
Untitled Abstract: No abstract text available Text: APTGF50X60T3G 3 Phase bridge NPT IGBT Power Module 15 VCES = 600V IC = 50A* @ Tc = 80°C Application • Motor control 31 16 19 23 29 25 30 14 20 18 11 10 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC	Original	PDF	APTGF50X60T3G
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	PDF	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
VRF2933FL Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301 Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system	Original	PDF	MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301