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    APT6030 Price and Stock

    Microchip Technology Inc APT6030BN

    MOSFET N-CH 600V 23A TO247AD
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    DigiKey APT6030BN Tube
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    Microchip Technology Inc APT6030BVRG

    MOSFET N-CH 600V 21A TO247
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    DigiKey APT6030BVRG Tube 50
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    Avnet Americas APT6030BVRG Tube 26 Weeks 50
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    Mouser Electronics APT6030BVRG 175
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    Arrow Electronics APT6030BVRG 10 26 Weeks 1
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    Microchip Technology Inc APT6030BVRG
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    Onlinecomponents.com APT6030BVRG
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    TME APT6030BVRG 1
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    NAC APT6030BVRG Tube 30
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    Master Electronics APT6030BVRG
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    Advanced Power Technology APT6030BN

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    Bristol Electronics APT6030BN 15
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    APT Semiconductor APT6030BVR

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    Bristol Electronics APT6030BVR 532
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    Advanced Power Technology APT6030BVR

    MOSFET Transistor, N-Channel, TO-247AD
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    Quest Components APT6030BVR 425
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    APT6030 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT6030 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT6030 Advanced Power Technology TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,23A I(D),TO-247AD Scan PDF
    APT6030BN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT6030BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 23A TO247AD Original PDF
    APT6030BN Advanced Power Technology N-Channel Enhancement Mode High Voltage Power MOSFET Scan PDF
    APT6030BNR Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT6030BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT6030BVFR Microsemi Power MOS V FREDFET Original PDF
    APT6030BVFR Unknown Power MOS V, 600V 21A, MOS-FET N-Channel enhanced Original PDF
    APT6030BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT6030BVR Microsemi Power MOS V MOSFET Original PDF
    APT6030BVRG Microchip Technology MOSFET N-CH 600V 21A TO247 Original PDF
    APT6030DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT6030SN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Original PDF
    APT6030SVFR Microsemi Power MOS V FREDFET Original PDF
    APT6030SVFR Unknown Power MOS V, 600V 21A, MOS-FET N-Channel enhanced Original PDF
    APT6030SVR Microsemi Power MOS V MOSFET Original PDF

    APT6030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6030BVFR O-247 O-247

    APT6030BVFR

    Abstract: APT6030SVFR
    Text: APT6030BVFR APT6030SVFR 600V 21A POWER MOS V FREDFET 0.300Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6030BVFR APT6030SVFR O-247 O-247 APT6030BVFR APT6030SVFR

    Untitled

    Abstract: No abstract text available
    Text: APT6030BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)92 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)360 Minimum Operating Temp (øC)-55õ


    Original     		PDF APT6030BN Junc-Case340m

    Untitled

    Abstract: No abstract text available
    Text: APT6030BVR APT6030SVR 600V 21A POWER MOS V MOSFET BVR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6030BVR APT6030SVR O-247 O-247 APT6030BVR

    Untitled

    Abstract: No abstract text available
    Text: APT6030BVR APT6030SVR 600V 21A POWER MOS V MOSFET BVR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6030BVR APT6030SVR O-247 O-247 APT6030BVR

    APT6030SN

    Abstract: No abstract text available
    Text: D D3PAK G APT6030SN S 600V 23.0A 0.30Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT6030SN UNIT 600 Volts 23 Continuous Drain Current @ TC = 25°C


    Original     		PDF APT6030SN APT6030SN

    Untitled

    Abstract: No abstract text available
    Text: APT6030BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)


    Original     		PDF APT6030BNR

    Untitled

    Abstract: No abstract text available
    Text: APT6030BVFR APT6030SVFR 600V 21A POWER MOS V FREDFET 0.300Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6030BVFR APT6030SVFR O-247 O-247 APT6030BVFR

    Untitled

    Abstract: No abstract text available
    Text: APT6030BVR 600V 21A 0.300Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT6030BVR O-247 O-247

    6030bn

    Abstract: APT6030BN APT6033BN
    Text: D TO-247 G S POWER MOS IV APT6030BN 600V 23.0A 0.30Ω APT6033BN 600V 22.0A 0.33Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		PDF O-247 APT6030BN APT6033BN 6030BN 6033BN O-247AD 6030bn

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y ' APT6030BVR 600V 21A 0.300Í2 POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT6030BVR O-247 APT6030BVR 00A/fis) O-247AD

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W ZA P o w er Te c h n o lo g y APT6030BNR APT6033BNR GFvvER MOS l'Tiä 600V 23.0A 0.30i> 600V 22.0A 0.3312 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT6030BNR APT6033BNR APT6033BNR APT6030/6033BNR O-247AD

    DLS FT 031

    Abstract: TL 084L APT6030BNR 25CC APT6033BNR
    Text: A d van ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR Ô S POWER MOS IV® 600V 23.0A 0.30U 600V 22.0A 0.33Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		PDF APT6030BNR APT6033BNR APT603Q/6033BNR O-247AD 0001S1S DLS FT 031 TL 084L 25CC

    APT6030BNR

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR O s 600V 23.0A 0.3012 600V 22.0A 0.33Ü POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V OSS D Continuous Drain Current @ Tc V V Parameter


    OCR Scan     		PDF APT6030BNR APT6033BNR APT6033BNR MIL-STD-750 O-247AD

    diode U3d

    Abstract: LM 7801 6030BNR diode U3d on DLS FT 031 APT6030BNR APT6033BNR 040 U3D u3d diode
    Text: O D O S ADVANCED PO W ER Te c h n o l o g y APT6030BNR APT6033BNR POWER MOS IVe 600V 23.0A 0.30Í2 600V 22.0A 0.33Í2 AVALANCHE RATED N-C HA N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol All Ratings: T c = 2 5 °C unless otherwise specified.


    OCR Scan     		PDF APT6030BNR APT6033BNR O-247AD diode U3d LM 7801 6030BNR diode U3d on DLS FT 031 040 U3D u3d diode

    APT802R4KN

    Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
    Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN


    OCR Scan     		PDF APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5040BN APT802R4KN APT6018LNR APT6060BN mosfet selector guide APT-6018 APT10M25bnfr k 3530 MOSFET 1r3b

    D 92 M - 03 DIODE

    Abstract: 6030bn
    Text: A dvanced P ow er Te c h n o l o g y O D O APT6030BN 600V 23.0A 0.30CÌ APT6033BN 600V 22.0A 0.33ÍÍ S _ ^ _ GB WER MOS \V® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN


    OCR Scan     		PDF APT6030BN APT6033BN 6030BN 6033BN APT6030/6033BN O-247AD D 92 M - 03 DIODE

    lr 2905 z

    Abstract: 1S17 APT6030SN
    Text: o A dvanced P o w er Te c h n o lo g y D APT6030SN O s 600V 23.0A 0.30Í2 POWER MOS IV« N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ' dm > CO O V GSM PD T J ’T STG tl All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT6030SN 000151e] lr 2905 z 1S17

    6030BN

    Abstract: 6033BN lr 2905 z DLS FT 031 APT6030BN APT6033BN
    Text: A d v a n ced P o w er Te c h n o l o g y * O D O S POWER MOS IV APT6030BN 600V 23.0A 0.300 APT6033BN 600V 22.0A 0.33Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT


    OCR Scan     		PDF APT6030BN APT6033BN 6030BN 6033BN Numb12, O-247AD lr 2905 z DLS FT 031

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y 8 O D O S POWER MOS IV APT6030BN 600V 23.0A 0.30Q APT6033BN 600V 22.0A 0.330 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT


    OCR Scan     		PDF APT6030BN APT6033BN 6030BN 6033BN O-247AD APT6030/6033BN

    APT6030BVR

    Abstract: No abstract text available
    Text: APT6030BVR • R A dvanced W .\A pow er Te c h n o lo g y " 600v 21 a 0.300Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT6030BVR O-247 APT6030BVR

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT6030BN 600V 23.0A 0.30Í1 APT6033BN 600V 22.0A 0.33Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT


    OCR Scan     		PDF APT6030BN APT6033BN 6030BN 6033BN APT6030/6033BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: APT6030BVR A dvanced P o w er Te c h n o l o g y 600V 21A 0.300Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT6030BVR O-247 MIL-STD-750 O-247AD

    ISOTOP

    Abstract: HU49
    Text: A d v an ced P o w er Te c h n o lo g y OD o J t t I S/D APT6030HJN o |^ 23.0A 0.30D 5 Û ”UL Recognized" File No. E145592 S ISOTOP OS 600V POWER MOS IV‘ HALF-BRIDGE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF APT6030HJN E145592 6030HJN OT-227 ISOTOP HU49