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    Untitled

    Abstract: No abstract text available
    Text: APT50GP90JDF2 900V POWER MOS 7 IGBT E E ® G The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP90JDF2 APT50GP90JDF2

    Untitled

    Abstract: No abstract text available
    Text: APT50GP90J 900V POWER MOS 7 IGBT 27 2 T- C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP90J APT50GP90J