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    Microchip Technology Inc APT50GP60JDQ2

    IGBT MOD 600V 100A 329W ISOTOP
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    Newark APT50GP60JDQ2 Bulk 20
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    Future Electronics APT50GP60JDQ2 20
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    Microchip Technology Inc APT50GP60JDQ2
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    Onlinecomponents.com APT50GP60JDQ2
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    TME APT50GP60JDQ2 1
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    NAC APT50GP60JDQ2 Tube 11
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    Master Electronics APT50GP60JDQ2
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    APT50GP60JDQ2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT50GP60JDQ2 Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 100A 329W SOT227 Original PDF
    APT50GP60JDQ2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT50GP60JDQ2 Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 600V 100A 329W SOT227 Original PDF

    APT50GP60JDQ2 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: APT50GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.


    Original     		PDF APT50GP60JDQ2 E145592

    APT50GP60JDQ2

    Abstract: APT6017LLL
    Text: APT50GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.


    Original     		PDF APT50GP60JDQ2 E145592 APT50GP60JDQ2 APT6017LLL

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF