MOSFET 25A 600V
Abstract: APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A
Text: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power
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APT25GP120BDF1
O-247
MOSFET 25A 600V
APT25GP120BDF1
T0-247
IC-125A
mosfet 1200V 25A
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power
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APT25GP120BDF1
O-247
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25GP120BDF1
Abstract: APT25GP120BDF1 IC 7416 T0-247 25GP120BD 25gp120
Text: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,
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APT25GP120BDF1
O-247
25GP120BDF1
APT25GP120BDF1
IC 7416
T0-247
25GP120BD
25gp120
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catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance
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APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of
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