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    APT200 Price and Stock

    Microchip Technology Inc APT200GN60J

    IGBT MOD 600V 283A 682W ISOTOP
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    DigiKey APT200GN60J Tube 35 1
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    Mouser Electronics APT200GN60J 9
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    Microchip Technology Inc APT200GN60J Tube 28 Weeks
    • 1 $37.22
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    Onlinecomponents.com APT200GN60J
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    Microchip Technology Inc APT200GN60JDQ4

    IGBT MOD 600V 283A 682W ISOTOP
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    DigiKey APT200GN60JDQ4 Tube 33 1
    • 1 $47.55
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    Avnet Americas APT200GN60JDQ4 Tube 28 Weeks 20
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    Mouser Electronics APT200GN60JDQ4 34
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    Microchip Technology Inc APT200GN60JDQ4 Tube 28 Weeks
    • 1 $47.55
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    Onlinecomponents.com APT200GN60JDQ4
    • 1 $45.41
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    TME APT200GN60JDQ4 1
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    NAC APT200GN60JDQ4 Tube 8
    • 1 $44.11
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    • 1 $45.41
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    Microchip Technology Inc APT200GT60JR

    IGBT MOD 600V 195A 500W SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT200GT60JR Tray 20
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    Microchip Technology Inc APT200GT60JR Tube 28 Weeks
    • 1 $46.98
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    TME APT200GT60JR 1
    • 1 $67.9
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    NAC APT200GT60JR Tube 8
    • 1 $43.57
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    • 100 $40.13
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    Microchip Technology Inc APT200GN60B2G

    IGBT TRENCH FIELD STOP 600V 283A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT200GN60B2G Tube 30
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    Avnet Americas APT200GN60B2G Tube 28 Weeks 30
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    Mouser Electronics APT200GN60B2G
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    Newark APT200GN60B2G Bulk 30
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    Microchip Technology Inc APT200GN60B2G Tube 28 Weeks
    • 1 $24.76
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    Onlinecomponents.com APT200GN60B2G
    • 1 $23.65
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    TME APT200GN60B2G 1
    • 1 $35.81
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    NAC APT200GN60B2G Tube 15
    • 1 $22.97
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    • 1 $23.65
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    • 100 $19.85
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    Dwyer Instruments Inc APT-20-0SN

    Ac Power Transformer, 24 Vac Input, 24 Vac Isolated Output, 20 Va, Single Hub Rohs Compliant: Yes |Dwyer APT-20-0SN
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    Newark APT-20-0SN Bulk 1
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    RS APT-20-0SN Bulk 1
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    Find more APT200 price and stock on Findchips.com

    APT200 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT200GN60B2G Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: T-MAX [B2]; BV(CES) (V): 600; IC (A): 230; Original PDF
    APT200GN60J Advanced Power Technology MOSFET Original PDF
    APT200GN60J Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ Original PDF
    APT200GN60JDQ4 Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 283A 682W SOT227 Original PDF
    APT200GN60JDQ4 Advanced Power Technology MOSFET Original PDF
    APT200GN60JDQ4 Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ Original PDF
    APT200GN60JDQ4G Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 283A 682W SOT227 Original PDF
    APT200GN60JDQ4G Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 600V 283A 682W SOT227 Original PDF
    APT200GN60JG Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 283A 682W SOT227 Original PDF
    APT200GN60JG Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 600V 283A 682W SOT227 Original PDF
    APT200GT60JR Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF
    APT200GT60JRDL Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF
    APT200GT60JRDQ4 Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF

    APT200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT100DQ60

    Abstract: APT200GN60JDQ4 APT200GN60LDQ4 MIC4452 mj 1504 transistor
    Text: APT200GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 C G ISOTOP ® • 600V Field Stop • • • • • E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum


    Original     		APT200GN60JDQ4 APT100DQ60 APT200GN60JDQ4 APT200GN60LDQ4 MIC4452 mj 1504 transistor PDF

    APT200GN60JDQ4

    Abstract: APT100DQ60 MIC4452 Ultra Low VF
    Text: APT200GN60JDQ4 APT200GN60JDQ4 TYPICAL PERFORMANCE CURVES 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight


    Original     		APT200GN60JDQ4 APT200GN60JDQ4 APT100DQ60 MIC4452 Ultra Low VF PDF

    PT100-1000 RTD

    Abstract: PT100 thermistor sensor Pt1000 transmitter 4.20 mA APT2000 PT1000 thermistor hart protocol 5000TC 100K thermistor honeywell rtd pt100 thermistor
    Text: APT2000 Toroidal Conductivity Two-Wire Transmitter APT 2000 Series Advanced features in a reliable, economical transmitter ADVANCED FEATURES • Large display with easy-to-read 0.75 inch measured value • Simple operator interface with basic pictographs • Six preprogrammed concentration curves


    Original     		APT2000 Integrate20 PT100-1000 RTD PT100 thermistor sensor Pt1000 transmitter 4.20 mA PT1000 thermistor hart protocol 5000TC 100K thermistor honeywell rtd pt100 thermistor PDF

    Untitled

    Abstract: No abstract text available
    Text: APT200GN60B2G 600V, VCE ON = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling


    Original     		APT200GN60B2G PDF

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JR 50KHz E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JRDL 50KHz PDF

    APT200GN60B2G

    Abstract: APT100DQ60
    Text: APT200GN60B2G 600V, VCE ON = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling


    Original     		APT200GN60B2G APT200GN60B2G APT100DQ60 PDF

    APT100DQ60

    Abstract: APT200GN60J MIC4452
    Text: APT200GN60J 600V TYPICAL PERFORMANCE CURVES APT200GN60J C G ISOTOP ® • 600V Field Stop • • • • • E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum


    Original     		APT200GN60J APT100DQ60 APT200GN60J MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JRDL 50KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JRDQ4 50KHz E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT200GN60J 600V TYPICAL PERFORMANCE CURVES APT200GN60J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT200GN60J PDF

    APT200GT60JRDL

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JRDL 50KHz APT200GT60JRDL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JRDQ4 50KHz E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT200GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT200GN60JDQ4 PDF

    APT100DQ60

    Abstract: APT200GT60JR
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JR 50KHz E145592 APT100DQ60 APT200GT60JR PDF

    APT100DQ60

    Abstract: APT200GT60JRDQ4
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JRDQ4 50KHz E145592 APT100DQ60 APT200GT60JRDQ4 PDF

    7610

    Abstract: APT100DQ60 APT200GN60J MIC4452 w41 transistor
    Text: APT200GN60J APT200GN60J TYPICAL PERFORMANCE CURVES 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight


    Original     		APT200GN60J 7610 APT100DQ60 APT200GN60J MIC4452 w41 transistor PDF

    33182

    Abstract: APT100DQ60 IGBT GS Thunderbolt IGBT APT200GT60JR APT100 apt100d
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JR 50KHz E145592 33182 APT100DQ60 IGBT GS Thunderbolt IGBT APT200GT60JR APT100 apt100d PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    Alcatel

    Abstract: MTK-20152 MTK-20130 MTK-20141 ISO14001 ic 841 ISO-14001 MTK-20131 MTK-20140 MTK-20150
    Text: ADSL Transformers for Alcatel Chipsets Features • • complies with ANSI and ETSI requirements matched to Alcatel’s MTK-20130, MTK-20131, MTK-20140, • MTK-20141, MTK-20150, MTK-20152 & MTK-20450 chipsets very low THD • • 1500V minimum isolation all materials approved to UL94V-0


    Original     		MTK-20130, MTK-20131, MTK-20140, MTK-20141, MTK-20150, MTK-20152 MTK-20450 UL94V-0 ISO-9001 TS-16949 Alcatel MTK-20152 MTK-20130 MTK-20141 ISO14001 ic 841 ISO-14001 MTK-20131 MTK-20140 MTK-20150 PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series PDF