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    Microchip Technology Inc APT18M100S

    MOSFET N-CH 1000V 18A D3PAK
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    Future Electronics APT18M100S Tube 26 Weeks 30
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    APT18M100S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT18M100S Microsemi N-Channel MOSFET Original PDF

    APT18M100S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT18M100B APT18M100S

    mosfet 1000v 9A

    Abstract: isl6260 APT18M100B APT18M100S MIC4452
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT18M100B APT18M100S mosfet 1000v 9A isl6260 APT18M100B APT18M100S MIC4452

    APT18M100B

    Abstract: APT18M100S MIC4452
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT18M100B APT18M100S APT18M100B APT18M100S MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT18M100B APT18M100S