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    APT13GP120B Price and Stock

    Microchip Technology Inc APT13GP120BG

    IGBT PT 1200V 41A TO247
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    Microchip Technology Inc APT13GP120BG
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    Microchip Technology Inc APT13GP120BDQ1G

    IGBT PT 1200V 41A TO247
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    DigiKey APT13GP120BDQ1G Tube 80
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    Mouser Electronics APT13GP120BDQ1G 22
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    Microchip Technology Inc APT13GP120BDQ1G
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    APT13GP120B Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT13GP120B Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT13GP120B Microsemi Insulated Gate Bipolar Transistor-PT High Speed Original PDF
    APT13GP120BDF1 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT13GP120BDQ1 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT13GP120BDQ1G Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 41A 250W TO247 Original PDF
    APT13GP120BDQ1G Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT13GP120BDQ1G Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 41A 250W TO247 Original PDF
    APT13GP120BG Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 41A 250W TO247 Original PDF
    APT13GP120BG Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT13GP120BG Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 41A 250W TO247 Original PDF
    APT13GP120BSC Unknown High Voltage, 1200V 41A, IGBT N-Type Original PDF

    APT13GP120B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13GP12

    Abstract: APT13GP120BD1 13gp120bd1
    Text: APT13GP120BD1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT13GP120BD1 O-247 T0-247 13GP12 APT13GP120BD1 13gp120bd1

    Untitled

    Abstract: No abstract text available
    Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original
    PDF APT13GP120BDQ1 APT13GP120BDQ1 APT13GP120BDQ1G*

    65a3

    Abstract: APT13GP120B T0-247
    Text: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT13GP120B O-247 Collector-Em059) 65a3 APT13GP120B T0-247

    IC 7414 datasheet

    Abstract: IC 7414 APT13GP120BDF1 T0-247 13A 600V TO247 IGBT
    Text: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT13GP120BDF1 O-247 Collec059) IC 7414 datasheet IC 7414 APT13GP120BDF1 T0-247 13A 600V TO247 IGBT

    APT13GP120BSC

    Abstract: T0-247
    Text: APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT13GP120BSC O-247 Col610) APT13GP120BSC T0-247

    Untitled

    Abstract: No abstract text available
    Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original
    PDF APT13GP120BDQ1 APT13GP120BDQ1 APT13GP120BDQ1G*

    transistor 7412

    Abstract: 7412 datasheet IC 7412 datasheet APT13GP120B APT13GP120BG APT13GP120S APT13GP120SG
    Text: 1200V APT13GP120B_S G APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* TYPICAL PERFORMANCE CURVES *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® B TO The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch


    Original
    PDF APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* transistor 7412 7412 datasheet IC 7412 datasheet APT13GP120B APT13GP120BG APT13GP120S APT13GP120SG

    13GP12

    Abstract: No abstract text available
    Text: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT13GP120BDF1 O-247 T0-247 13GP12

    APT13GP120B

    Abstract: T0-247 65a3
    Text: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT13GP120B O-247 Collector-Em247 APT13GP120B T0-247 65a3

    Untitled

    Abstract: No abstract text available
    Text: APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT13GP120BDF1 O-247

    T0-247

    Abstract: APT13GP120B igbt driver 600V 13A 600V TO247
    Text: APT13GP120B APT13GP120B TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT13GP120B O-247 T0-247 APT13GP120B igbt driver 600V 13A 600V TO247

    IC 7446 A

    Abstract: ic 7446 data sheet ic 7446 7446 data sheet IC 7446 datasheet 7446 APT13GP120BDQ1 APT13GP120BDQ1G 1200v 30A to247
    Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original
    PDF APT13GP120BDQ1 APT13GP120BDQ1 APT13GP120BDQ1G* IC 7446 A ic 7446 data sheet ic 7446 7446 data sheet IC 7446 datasheet 7446 APT13GP120BDQ1G 1200v 30A to247

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original
    PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original
    PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original
    PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original
    PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    600 volt mosfet

    Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
    Text: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced “Miller Capacitance” - this provides for increased noise and spurious turn-on immunity and eliminates the


    Original
    PDF APT40GP60B2D1 O-247 APT25GP120B2D1 APT35GP120B2D2 APT45GP120B2D2 APT50GP60B2D2 APT65GP60L2D2 264-MAXTM 600 volt mosfet 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500