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    APQ03SN80AB

    Abstract: MOSFET 800V 3A 800VVGS
    Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ03SN80AB 00V/3A APQ03SN80AB-XXM0 APQ03SN80AB MOSFET 800V 3A 800VVGS

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    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ03SN80AB 00V/3A