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    APM4008N

    Abstract: APM4008NG APM4008 mosfet 10V 10A A102 STD-020C
    Text: APM4008NG N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V RDS(ON)=10.5mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged G Lead Free Available (RoHS Compliant) S Top View of TO-263


    Original
    PDF APM4008NG 0V/60A, O-263 APM4008N APM4008N APM4008NG APM4008 mosfet 10V 10A A102 STD-020C

    APM4008N

    Abstract: APM4008NG APM4008 ANPEC A102 A104 A108 B102 JESD-22
    Text: APM4008NG N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=10mΩ (typ.) @ VGS=4.5V • • • D S Super High Dense Cell Design Reliable and Rugged Top View of TO-263 Lead Free and Green Devices Available (RoHS


    Original
    PDF APM4008NG 0V/60A, O-263 APM4008N APM4008N JESD-22, APM4008NG APM4008 ANPEC A102 A104 A108 B102 JESD-22

    APM4008N

    Abstract: APM4008 APM4008NG A102
    Text: APM4008NG N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V RDS(ON)=10mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged G Lead Free and Green Devices Available (RoHS


    Original
    PDF APM4008NG 0V/60A, O-263 APM4008N APM4008N APM4008 APM4008NG A102