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    APM3055N MOSFET Search Results

    APM3055N MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    APM3055N MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APM3055N

    Abstract: apm3055 apm3055n mosfet APM3055NG apm*3055n transistor apm3055n equivalent A102
    Text: APM3055NG N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =75mΩ (typ.) @ VGS=10V RDS(ON)=100mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design G Reliable and Rugged D S Lead Free and Green Devices Available Top View of TO-263


    Original     		APM3055NG 0V/12A, O-263 APM3055N APM3055N apm3055 apm3055n mosfet APM3055NG apm*3055n transistor apm3055n equivalent A102 PDF

    APM3055N

    Abstract: apm3055n mosfet STD-020C
    Text: APM3055NG N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =75mΩ (typ.) @ VGS=10V RDS(ON)=100mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged Lead Free Available (RoHS Compliant) G S Top View of TO-263


    Original     		APM3055NG 0V/12A, O-263 APM3055N APM3055N MIL-STD-883D-2003 883D-1005 JESD-22-B, apm3055n mosfet STD-020C PDF

    APM3055N

    Abstract: No abstract text available
    Text: APM3055NG N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =75mΩ (typ.) @ VGS=10V RDS(ON)=100mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged Lead Free and Green Devices Available G (RoHS Compliant)


    Original     		APM3055NG 0V/12A, O-263 APM3055N APM3055N PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF