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    APM3005N Search Results

    APM3005N Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APM3005N ANPEC Electronics N-Channel Enhancement Mode MOSFET Original PDF
    APM3005NFC-TR ANPEC Electronics 30 V, N-channel enhancement mode MOSFET Original PDF
    APM3005NFC-TU ANPEC Electronics 30 V, N-channel enhancement mode MOSFET Original PDF
    APM3005NGC-TR ANPEC Electronics 30 V, N-channel enhancement mode MOSFET Original PDF
    APM3005NGC-TU ANPEC Electronics 30 V, N-channel enhancement mode MOSFET Original PDF
    APM3005NU ANPEC Electronics 30V 50A N-channel MOSFET Original PDF
    APM3005NUC-TR ANPEC Electronics 30 V, N-channel enhancement mode MOSFET Original PDF
    APM3005NUC-TRL ANPEC Electronics N-Channel Enhancement Mode MOSFET Original PDF
    APM3005NUC-TU ANPEC Electronics 30 V, N-channel enhancement mode MOSFET Original PDF
    APM3005NUC-TUL ANPEC Electronics N-Channel Enhancement Mode MOSFET Original PDF

    APM3005N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A102

    Abstract: APM3005N APM3005NU STD-020C
    Text: APM3005NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =4.5mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • • G Super High Dense Cell Design D S Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)


    Original
    PDF APM3005NU 0V/50A, O-252 APM3005N APM3005N A102 APM3005NU STD-020C

    M3005N

    Abstract: A102 APM3005N J-STD-020A
    Text: APM3005N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V / 80A , RDS ON = 4mΩ(typ.) @ VGS= 10V RDS(ON)= 7mΩ(typ.) @ VGS= 4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • • 1 2 3 G D S Reliable and Rugged


    Original
    PDF APM3005N O-220, O-252 O-263 O-263 3005N M3005N A102 APM3005N J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: APM3005NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/60A , RDS ON =4.5mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=4.5V • • • • G Super High Dense Cell Design D S Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)


    Original
    PDF APM3005NU 0V/60A O-252 3005N

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696