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    APD PHOTODIODE RESPONSIVITY 1550NM Search Results

    APD PHOTODIODE RESPONSIVITY 1550NM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    ADPD2140WBCPZN-R7 Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140WBCPZN-RL Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140BCPZN-R7 Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140BCPZN-RL Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    EVAL-CN0272-SDPZ Analog Devices 2MHz photodiode preamp & dark Visit Analog Devices Buy
    ADL5308ACCZ Analog Devices Fast Response Logarithmic Conv Visit Analog Devices Buy

    APD PHOTODIODE RESPONSIVITY 1550NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    InGaas PIN photodiode, 1550 NEP

    Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


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    APD 1550 nm bare die

    Abstract: EMCORE APD
    Text: G1013-406, 2.5G Avalanche Photodiode APD Bare Die DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s PS-G1013-406 2.5G Avalanche Photodiode (APD), Top Illuminated APD Chip is designed for GPON ONU and 2.6 Gb/s applications. It has high responsivity and low capacitance with low noise equivalent power and is ideally


    Original     		PDF G1013-406, PS-G1013-406 G1013-406 APD 1550 nm bare die EMCORE APD

    IAG 080

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


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    10G APD chip

    Abstract: EMCORE APD
    Text: G3072-408, 10G Avalanche Photodiode, Coplanar Bottom Illuminated APD DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s PS-3072-408 10G Avalanche Photodiode, Coplanar Bottom Illuminated Chip is designed for GPON application products. It has high responsivity and low capacitance and is ideally suited for low cost, high-speed


    Original     		PDF G3072-408, PS-3072-408 G3072-408 10G APD chip EMCORE APD

    apd 1625nm

    Abstract: OF1161B-L3-SFFC STM-16
    Text: JOG-00921 OKI Electronics Components Preliminary OF1161B-L3 Rev. 1 [11. 2001] L-band APD coaxial module with single mode fiber 1. DESCRIPTION OF1161B-L3 is an avalanche photodiode module for long haul digital transmission systems. It has useful responsivity in L-band, so it ’s suitable for fiber testing and WDM applications. Package style is a hermetically


    Original     		PDF JOG-00921 OF1161B-L3 OF1161B-L3 1625nm, OC-48/SDH STM-16 Coeff61 OF1161B-L3-SF_ apd 1625nm OF1161B-L3-SFFC

    diode d1n914

    Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		PDF C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity

    C30817E

    Abstract: No abstract text available
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		PDF C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E

    photodiode 1550nm nep

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input


    Original     		PDF 264-339759-VAR 12lead 200um] 200um, Opto759-VAR photodiode 1550nm nep

    PIN photodiode responsivity 1550nm 1.1

    Abstract: GaP photodiode APD photodiode Avalanche photodiode 1310nm photodiode -28dBm sensitivity fujitsu Photodiode 1550nm bandwidth Fujitsu APD photodiode 40ghz Photodiode apd high sensitivity 550NM photodiode avalanche 1550nm photodiode 5 Ghz
    Text: FPD5W1KX Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diameter: 30µm High cut-off frequency: 3.0GHz at M=5 and 10 Large gain-bandwidth product: 40GHz Low dark current: 20nA


    Original     		PDF 40GHz 1550nm. In4888 PIN photodiode responsivity 1550nm 1.1 GaP photodiode APD photodiode Avalanche photodiode 1310nm photodiode -28dBm sensitivity fujitsu Photodiode 1550nm bandwidth Fujitsu APD photodiode 40ghz Photodiode apd high sensitivity 550NM photodiode avalanche 1550nm photodiode 5 Ghz

    PIN photodiode responsivity 1550nm 1.1

    Abstract: avalanche photodiode avalanche photodiode 1550nm sensitivity PIN photodiode responsivity 1550nm 2,5 GHz Fujitsu APD avalanche 1550nm photodiode 5 Ghz photodiode 40ghz photodiode Avalanche photodiode photodiode Avalanche photodiode APD avalanche 1550nm photodiode bandwidth 5 Ghz
    Text: FPD5W1KX Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diameter: 30µm High cut-off frequency: 3.0GHz at M=5 and 10 Large gain-bandwidth product: 40GHz Low dark current: 20nA


    Original     		PDF 40GHz 1550nm. In4888 PIN photodiode responsivity 1550nm 1.1 avalanche photodiode avalanche photodiode 1550nm sensitivity PIN photodiode responsivity 1550nm 2,5 GHz Fujitsu APD avalanche 1550nm photodiode 5 Ghz photodiode 40ghz photodiode Avalanche photodiode photodiode Avalanche photodiode APD avalanche 1550nm photodiode bandwidth 5 Ghz

    C30817E

    Abstract: datasheet apd 1550
    Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,


    Original     		PDF C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    Photodiode apd high sensitivity

    Abstract: InGaAs apd photodiode 156Mbps apd photodiode 156Mbps InGaAs apd photodiode APD 1310nm avalanche photodiode 1550nm sensitivity APD 1550nm OKI m10 apd photodiode responsivity 1550nm OF3601B-C2-AFFC
    Text: JOG-00850 OKI Electronics Components Preliminary OF3601B-C2 Rev. 2 [11. 2001] 156Mbps APD-preamplifier coaxial module with single mode fiber 1. DESCRIPTION OF3601B-C2 is an optical receiver module for digital transmission systems up to 156Mbps. It uses an InGaAs


    Original     		PDF JOG-00850 OF3601B-C2 156Mbps OF3601B-C2 156Mbps. 156Mbps 1310nm OF3601B-C2-AFFC OF3601 Photodiode apd high sensitivity InGaAs apd photodiode 156Mbps apd photodiode 156Mbps InGaAs apd photodiode APD 1310nm avalanche photodiode 1550nm sensitivity APD 1550nm OKI m10 apd photodiode responsivity 1550nm OF3601B-C2-AFFC

    TAP4NN3

    Abstract: ITU-T G.651 Analog Photodiode, 1550nm, TBP4NN3 PIN photodiode responsivity 1550nm 1.1 G651 photodiode 1550nm pigtailed 1550nm photodiode 5 Ghz PIN photodiode 5ghz pigtailed
    Text: Pigtailed PD for analog application TAP4NN3 series Long wavelength InGaAs PIN-PD Detection wavelength range of 1.1µm to 1.6µm SMF or MMF Pigtailed SC, FC, ST, or LC Connector Family Model TAP4NN3 TZP4NN3 TBP4NN3 Features InGaAs long wavelength PIN photodiode


    Original     		PDF 1310nm 1550nm 25Gbps 125Gbps DS-TP-110-Rev01 TAP4NN3 ITU-T G.651 Analog Photodiode, 1550nm, TBP4NN3 PIN photodiode responsivity 1550nm 1.1 G651 photodiode 1550nm pigtailed 1550nm photodiode 5 Ghz PIN photodiode 5ghz pigtailed

    apd photodiode responsivity 1550nm

    Abstract: InGaAs apd photodiode APD 1550nm InGaAs Photodiode 1550nm APD "PhotoDiode" 1550nm APD-1100 avalanche photodiode 1550nm sensitivity apd photodiode responsivity
    Text: Optoway APD-1100 * InGaAs Avalanche PHOTODIODE APD-1100 SERIES *


    Original     		PDF APD-1100 APD-1100 apd photodiode responsivity 1550nm InGaAs apd photodiode APD 1550nm InGaAs Photodiode 1550nm APD "PhotoDiode" 1550nm avalanche photodiode 1550nm sensitivity apd photodiode responsivity

    avalanche photodiode 1550nm sensitivity

    Abstract: InGaAs apd photodiode OF3631N-C3 STM-16 avalanche photodiode oc48 1550 fiber 2.5 APD 1550nm InGaas APD photodiode, 1550 sensitivity
    Text: JOG-01022 001 OKI Electronics Components Preliminary OF3631N-C3 Rev. 1 [10. 2002] 2.5Gbps APD-preamplifier module with single mode fiber 1. DESCRIPTION OF3631N is an optical receiver module with an InGaAs avalanche photodiode and a low noise preamplifier. Package style is a surface mount type gull-wing lead package with a single mode


    Original     		PDF JOG-01022 OF3631N-C3 OF3631N OC-48/SDH STM-16 STM-16 1310nm, 25rior D-41460 avalanche photodiode 1550nm sensitivity InGaAs apd photodiode OF3631N-C3 avalanche photodiode oc48 1550 fiber 2.5 APD 1550nm InGaas APD photodiode, 1550 sensitivity

    Untitled

    Abstract: No abstract text available
    Text: Optoway APD-1100 * InGaAs Avalanche PHOTODIODE APD-1100 SERIES *


    Original     		PDF APD-1100 APD-1100

    InGaAs Photodiode 1550nm

    Abstract: avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity 1550nm photodiode 5 Ghz FPD5W1KS avalanche photodiode ingaas ghz apd photodiode responsivity 1550nm photodiode 1550nm bandwidth Fujitsu avalanche photodiode photodiode 1550nm
    Text: FPD5W1KS InGaAs Avalanche Photodiode APPLICATIONS • 2.4 Gb/s optical transmission systems DESCRIPTION The FPD5W1KS is a wide bandwidth, high sensitivity InGaAs avalanche photodiode APD optimized for operation at 1550nm. This APD is designed for use in optical transmission systems


    OCR Scan     		PDF 1550nm. 1550nm InGaAs Photodiode 1550nm avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity 1550nm photodiode 5 Ghz FPD5W1KS avalanche photodiode ingaas ghz apd photodiode responsivity 1550nm photodiode 1550nm bandwidth Fujitsu avalanche photodiode photodiode 1550nm

    FPD5W1KS

    Abstract: Fujitsu Quantum Devices FPD5W1KS avalanche photodiode avalanche photodiode 1550nm sensitivity InGaAs apd photodiode avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity single mode photodiode Avalanche photodiode avalanche photodiode noise factor Fujitsu avalanche photodiode
    Text: InGaAs Avalanche Photodiode FPD5W1KS FEATURES • • • • • • • • Multi-mode fiber pigtail 30dB Optical Return Loss ORL 30 |jm active area APD High reliability planar structure with a guard ring based on advanced InGaAs/lnP material technology


    OCR Scan     		PDF 1550nm. FCSI0199M200 FPD5W1KS Fujitsu Quantum Devices FPD5W1KS avalanche photodiode avalanche photodiode 1550nm sensitivity InGaAs apd photodiode avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity single mode photodiode Avalanche photodiode avalanche photodiode noise factor Fujitsu avalanche photodiode

    avalanche 1550nm photodiode 5 Ghz

    Abstract: FPD15U51KS InGaAs Photodiode 1550nm fpd15u51 apd photodiode responsivity 1550nm
    Text: FPD15U51KS DESCRIPTION The FPD15U51KS is an InGaAs Avalanche Photodiode APD w ith a m u lti­ mode fiber pigtail designed fo r use in 1550nm wavelength optical trans­ mission systems operating at high-bit-rates and over long distances. Fujitsu's advanced InGaAs/lnP material technology realizes a high re lia b ility


    OCR Scan     		PDF FPD15U51KS FPD15U51KS 1550nm 374T75b 0GGSD14 avalanche 1550nm photodiode 5 Ghz InGaAs Photodiode 1550nm fpd15u51 apd photodiode responsivity 1550nm

    Untitled

    Abstract: No abstract text available
    Text: FRM15U621CU APD PRE-AMPLIFIER MODULE DESCRIPTION The FRM15U621CU is an APD pre-amplifier module fo r 1300 and 1550nm wavelength optical receiver front-end. It contains a planar InGaAs-APD Avalanche Photo-diode and a transimpedance type GaAs pre-amplifier IC.


    OCR Scan     		PDF FRM15U621CU FRM15U621CU 1550nm 0GG5052

    mitsubishi APD

    Abstract: Photodiode apd "InGaAs APD" InGaAs Photodiode 1550nm apd 2.5 g 1550nm apd 1300nm
    Text: • G01Û35T GT b ■ MITSUBISHI OPTICAL DEVICES FU-318AP/FU-318SAP InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FEATURES The FU-318AP/318SAP series avalanche photodiode • Low-dark current (3nA) (APD) modules are designed fo r use in fibe r testing


    OCR Scan     		PDF FU-318AP/FU-318SAP FU-318AP/318SAP 1300nm) FU-318SAP FU-318AP 00l03t mitsubishi APD Photodiode apd "InGaAs APD" InGaAs Photodiode 1550nm apd 2.5 g 1550nm apd 1300nm

    photodiode Responsivity

    Abstract: PIN photodiode responsivity 1550nm 2,5 GHz FRM15w PIN Photodiode 1550nm 4 ghz
    Text: • FHNH5W23WH D ES C R IP TIO N The FR M 15W 231C R is an APD pre-amplifier module for 1550nm wave­ length optical receiver front-end. It contains a planar InGaAs-APD Avalanche Phto-diode and a transimpedance type GaAs pre-amplifier IC. The InGaAs-APD, having high responsivity, low capacitance and low noise


    OCR Scan     		PDF FHNH5W23WH FRM15W231CR 1550nm 4T75b 0DD5057 FRM15W231CR 0005D5Ö photodiode Responsivity PIN photodiode responsivity 1550nm 2,5 GHz FRM15w PIN Photodiode 1550nm 4 ghz

    InGaAs Photodiode 1550nm

    Abstract: photodiode sensitivity 1550nm 2 avalanche photodiode ingaas ghz "PhotoDiode" 1550nm APD 1550nm APD "PhotoDiode" 1550nm
    Text: InGaAs AUALANCHE PHOTODIOOE FPD15W51JW DESCRIPTION The FPD15W51JW is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD w ith a m ultim ode fiber pigtail designed fo r use in optical transmission systems operating at a giga-bit-rate, especially at


    OCR Scan     		PDF FPD15W51JW FPD15W51JW 50jum. 374T7Sb 374T75b InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 avalanche photodiode ingaas ghz "PhotoDiode" 1550nm APD 1550nm APD "PhotoDiode" 1550nm