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    APD CARRIER Search Results

    APD CARRIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    IN80C188-12 Rochester Electronics LLC Microprocessor, 16-Bit, 12.5MHz, CMOS, PQCC68, PLASTIC, LCC-68 Visit Rochester Electronics LLC Buy
    N80C188-25 Rochester Electronics LLC Microprocessor, 16-Bit, 25MHz, CMOS, PQCC68, PLASTIC, LCC-68 Visit Rochester Electronics LLC Buy
    IN80C186-20 Rochester Electronics LLC Microprocessor, 16-Bit, 20MHz, CMOS, PQCC68, PLASTIC, LCC-68 Visit Rochester Electronics LLC Buy
    N80C188-20 Rochester Electronics LLC Microprocessor, 16-Bit, 20MHz, CMOS, PQCC68, PLASTIC, LCC-68 Visit Rochester Electronics LLC Buy
    R80186 Rochester Electronics LLC Microprocessor, 16-Bit, 8MHz, CMOS, CQCC68, CERAMIC, LCC-68 Visit Rochester Electronics LLC Buy

    APD CARRIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD


    Original     		PDF O-C30737PH C30737LH C30737 C30724 Standard-90 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92

    smd t1A

    Abstract: t1A 13
    Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD


    Original     		PDF O-C30737PH C30737LH C30737 C30724 C3072490 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 C30724EH smd t1A t1A 13

    S13081

    Abstract: APD Arrays
    Text: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits


    Original     		PDF org/abs/1003 6071v2 S13081 APD Arrays

    Untitled

    Abstract: No abstract text available
    Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain


    Original     		PDF D-82211 KAPD0001E05

    PerkinElmer Avalanche Photodiode

    Abstract: No abstract text available
    Text: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits


    Original     		PDF C30739ECERH) DTS0108P PerkinElmer Avalanche Photodiode

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices Applications • Switches  Attenuators Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width


    Original     		PDF APD0505 APD1520 203250B

    AN92F

    Abstract: CTX-02-16004 VICTOREEN model 500 tektronix 454a jim Williams ZTN4424 2n2369 avalanche datasheet of CMOS IC 74c90 P6046 11A33
    Text: Application Note 92 November 2002 Bias Voltage and Current Sense Circuits for Avalanche Photodiodes Feeding and Reading the APD Jim Williams, Linear Technology Corporation INTRODUCTION Avalanche photodiodes APDs are widely utilized in laser based fiberoptic systems to convert optical data into


    Original     		PDF AN92-31 AN92-32 an92f CTX-02-16004 VICTOREEN model 500 tektronix 454a jim Williams ZTN4424 2n2369 avalanche datasheet of CMOS IC 74c90 P6046 11A33

    APD0810-203

    Abstract: APD1510 APD0510-210
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches • Attenuators Features • Established Skyworks PIN diode process • Low capacitance designs to 0.05 pF • Voltage ratings to 200 V • Chip size < 15 mils square


    Original     		PDF APD0505-000 200075M APD0810-203 APD1510 APD0510-210

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF SQ04-0074. 200075N

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF SQ04-0074. 200075O

    APD0805-000

    Abstract: S1570
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF APD0505-000 200075K APD0805-000 S1570

    APD0520-000

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches • Attenuators Features • Established Skyworks PIN diode process • Low capacitance designs to 0.05 pF • Voltage ratings to 200 V • Chip size < 15 mils square


    Original     		PDF APD0505-000 200075I APD0520-000

    lidar apd model

    Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
    Text: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.


    Original     		PDF ED-13, ED-0017/03/8, C30902E/S, C30921 lidar apd model APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode

    APD1520-000

    Abstract: APD2220-000 APD0505-000 APD0505-240 APD0510-000 APD0520-000 APD0805-000 APD0810-000 APD1510-000 APD1510-219
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF APD0505 200075L APD1520-000 APD2220-000 APD0505-000 APD0505-240 APD0510-000 APD0520-000 APD0805-000 APD0810-000 APD1510-000 APD1510-219

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF SQ04-0074. 200075P

    PM 8038

    Abstract: e/10Gb CDR
    Text: TS-S10D166C Preliminary October, 2011 40Gb/s CFP Optical Transceiver Module SCF0400E4 Series 40Gbps 40km, 4-lane x 10Gb/s CWDM, DFB-LD, APD-PD Features  4-lane x 10Gb/s CWDM Optical Interface  High quality and reliability optical sub-assemblies 


    Original     		PDF TS-S10D166C 40Gb/s SCF0400E4 40Gbps 10Gb/s 1310nm 1331nm IEEE802 PM 8038 e/10Gb CDR

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used


    Original     		PDF SAP500-Series

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used


    Original     		PDF SAP500-Series

    Untitled

    Abstract: No abstract text available
    Text: SPS-43-48H-HP-TDE Features • Burst receive GPON OLT transceiver • Small Form Factor Pluggable, Simple SC Connector • “Fast Signal Detect” feature reduces ranging overhead • Simplified OLT “reset” timing • 1490 nm DFB Tx with isolator • 1310 nm APD Rx


    Original     		PDF SPS-43-48H-HP-TDE Tx/1244 DS-7078

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.


    Original     		PDF C30739ECERH

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in


    Original     		PDF SAP500-Series

    avalanche photodiode 1550nm sensitivity

    Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC
    Text: InGaAs AVALANCHE PHOTODIODE FPD15W51RT DESCRIPTION The FPD15W51RT is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD mounted on a low parasitic ceramic carrier designed for use in optical transmission systems operating at a giga-bit-rate,


    OCR Scan     		PDF FPD15W51RT FPD15W51RT 1550nm. 000SD3D 371H75Î avalanche photodiode 1550nm sensitivity InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC

    Fujitsu avalanche photodiode

    Abstract: No abstract text available
    Text: inGaAs AVALANCHE PHOTODIODE FPD13W51RT DESCRIPTION The FPD13W51RT is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD mounted on a low parasitic ceramic carrier designed fo r use in optical transmission systems operating at a giga-bit-rate,


    OCR Scan     		PDF FPD13W51RT FPD13W51RT 50/xrn. 1300nm. PH0T00H Fujitsu avalanche photodiode