Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    APD 1550 RISE TIME, DARK, CAPACITANCE Search Results

    APD 1550 RISE TIME, DARK, CAPACITANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    APD 1550 RISE TIME, DARK, CAPACITANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Pigtailed 14 Pin Butterfly Single Photon Avalanche Diode SPAD PGA-400 1. PRODUCT DESCRIPTION The Princeton Lightwave SPAD is an InGaAs/InP avalanche photodetector designed specifically for single photon counting applications. The device is intended for use at voltage biases above the


    Original     		PDF PGA-400

    GAP100

    Abstract: GAP300 Germanium Power Diodes GAP75 GAP60CS GAP60 10E-15 Germanium power Photodiodes Germanium PIN TO46
    Text: GAP60 GAP60CS GAP75 GAP100 GAP300 GPD OPTOELECTRONICS CORP. High Speed InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP60 GAP60CS GAP75 GAP100 GAP300


    Original     		PDF GAP60 GAP60CS GAP75 GAP100 GAP300 GAP300 Germanium Power Diodes GAP75 10E-15 Germanium power Photodiodes Germanium PIN TO46

    1000nm ir

    Abstract: NDL5553P NDL5553P1 NDL5553P2 apd 1550 OTDR
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    C30817E

    Abstract: C30955EH
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and


    Original     		PDF C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH

    InGaAs Epitaxx APD

    Abstract: avalanche photodiodes InGaas APD detector, 1550 sensitivity epitaxx APD photovoltaic receiver 1550 InGaAs apd photodiode Si apd photodiode 10 gb APD receiver apd 1550 rise time, dark, capacitance EPITAXX erm 577
    Text: Erik Jonsson School of Engineering & Computer Science The University of Texas at Dallas OPTICAL DETECTORS AND RECEIVERS Notes prepared for EE 6310 by Professor Cyrus D. Cantrell August–December 2003 c C. D. Cantrell 06/2003 The University of Texas at Dallas


    Original     		PDF

    C30902S

    Abstract: C30817E C30817 C30955EH
    Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager


    Original     		PDF C30902EH, C30921EH C30902SH, C30921SH C30902S C30817E C30817 C30955EH

    laser diode alcatel

    Abstract: Alcatel dfb laser Alcatel optical transmitter laser diode g.652 alcatel laser diode alcatel g.652 alcatel sdh tx ingaas apd photodetector alcatel photodetector
    Text: Alcatel 1952 LMC Pigtailed Coaxial Module 622 Mbit/s DFB Laser Description Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber, the Alcatel 1952 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF

    Alcatel optical transmitter

    Abstract: laser diode alcatel laser diode g.652 alcatel laser diode alcatel g.652 DISPERSION shifted FIBER g.653 fiber
    Text: Alcatel 1952 LMC Pigtailed Coaxial Module 622 Mbit/s DFB Laser Description Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber, the Alcatel 1952 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF F-91625 Alcatel optical transmitter laser diode alcatel laser diode g.652 alcatel laser diode alcatel g.652 DISPERSION shifted FIBER g.653 fiber

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    1902 transistor

    Abstract: photodetector modules G.652 fibre laser diode alcatel laser diode g.652 alcatel laser diode alcatel g.652 Alcatel Optronics apd 1550 rise time Alcatel dfb laser Alcatel optical transmitter
    Text: Alcatel 1902 LMC Window Cap TO CAN Coaxial Module 622 Mbit/s DFB Laser Description Designed to provide high optical performance for ITU-T G.652 standard optical fibre and ITU-T G.653 shifted dispersion fibre, the Alcatel 1902 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF temperature56 1902 transistor photodetector modules G.652 fibre laser diode alcatel laser diode g.652 alcatel laser diode alcatel g.652 Alcatel Optronics apd 1550 rise time Alcatel dfb laser Alcatel optical transmitter

    Alcatel dfb laser

    Abstract: Alcatel optical transmitter photodetector 1902 transistor alcatel sdh tx datasheet laser 1550 spectral G.652 fibre Photodiode alcatel apd laser diode alcatel laser diode g.652 alcatel
    Text: Alcatel 1902 LMC Window Cap TO CAN Coaxial Module 622 Mbit/s DFB Laser Description Designed to provide high optical performance for ITU-T G.652 standard optical fibre and ITU-T G.653 shifted dispersion fibre, the Alcatel 1902 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF temperature530. Alcatel dfb laser Alcatel optical transmitter photodetector 1902 transistor alcatel sdh tx datasheet laser 1550 spectral G.652 fibre Photodiode alcatel apd laser diode alcatel laser diode g.652 alcatel

    InGaAs apd photodiode

    Abstract: laser diode alcatel optical fiber G.653 Photodiode alcatel apd laser diode g.652 alcatel laser diode alcatel g.652 G.653 fiber ITU-T G.652 D photodetector Alcatel dfb laser
    Text: Alcatel 1901 LMC Window Cap TO CAN Coaxial Module 622 Mbit/s FP Laser Description Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber, the Alcatel 1901 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF

    optical fiber G.653

    Abstract: optical fiber G.652 Alcatel g.653 fiber ITU-T G.652 D Alcatel optical fiber g652 laser diode alcatel g.652 ITU-T G.652 laser diode g.652 alcatel G.652 G.653
    Text: Alcatel 1911 LMC Lens Cap TO CAN Coaxial Module 622 Mbit/s FP Laser Description Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber, the Alcatel 1911 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF F-91625 optical fiber G.653 optical fiber G.652 Alcatel g.653 fiber ITU-T G.652 D Alcatel optical fiber g652 laser diode alcatel g.652 ITU-T G.652 laser diode g.652 alcatel G.652 G.653

    pin photodetector alcatel

    Abstract: Alcatel 1981 Alcatel optical fiber laser diode alcatel laser diode g.652 alcatel laser diode alcatel g.652 optical fiber G.653 g.653 fiber G.652 fibre ingaas apd photodetector
    Text: Alcatel 1981 LMC Connectorized Coaxial Module 622 Mbit/s FP Laser Description Designed to provide high optical performance for ITU-T G.652 standard optical fibre and ITU-T G.653 shifted dispersion fibre, the Alcatel 1981 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF

    laser diode alcatel

    Abstract: laser diode g.652 alcatel laser diode alcatel g.652 Alcatel dfb laser g.653 fiber
    Text: Alcatel 1951 LMC Pigtailed Coaxial Module 622 Mbit/s FP Laser • Description Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber, the Alcatel 1951 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF F-91625 laser diode alcatel laser diode g.652 alcatel laser diode alcatel g.652 Alcatel dfb laser g.653 fiber

    Alcatel optical transmitter

    Abstract: alcatel sdh tx laser diode alcatel laser diode g.652 alcatel laser diode alcatel g.652 Alcatel dfb laser Alcatel 1951 ingaas apd photodetector
    Text: Alcatel 1951 LMC Pigtailed Coaxial Module 622 Mbit/s FP Laser Description • Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber, the Alcatel 1951 LMC consists of an uncooled, reliable Strained-Layer MQW InGaAsP laser and


    Original     		PDF

    OPR 12 PHOTOCELL

    Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
    Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In


    Original     		PDF ADE-408-001E HR1201CX OPR 12 PHOTOCELL photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed

    R7600-M64

    Abstract: S10362-11-100C circuit diagram of a laser lighter
    Text: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights


    Original     		PDF S10783 S10784 P2211 DE128228814 R7600-M64 S10362-11-100C circuit diagram of a laser lighter

    g.653 fiber

    Abstract: P1S12D RXDOUT13 10G APD RX OIF1999 40G 300pin coherent Transponder 300pin msa dwdm power supply aps 231
    Text: Preliminary Data Sheet Sept 2004 CE64-Type SONET/SDH OC-192/STM-64 and 10 GbE Transponder for Intermediate- or Long-Reach Applications 10.709 Gb/s operation. Optional dual-rate jitter filter available. The CE64 is a third-generation family of 300-pin, MSA compliant transponders for 40km and 80km


    Original     		PDF CE64-Type OC-192/STM-64 CE64S2 GR-253 10GBASE-ER/EW CE64L2 DS04-011 g.653 fiber P1S12D RXDOUT13 10G APD RX OIF1999 40G 300pin coherent Transponder 300pin msa dwdm power supply aps 231

    g.653 fiber

    Abstract: TxTRACE EIA-625 GR-253 coherent Transponder 10 gb laser diode the1550 card transponder ITU-T G.652 D 300pin pinout
    Text: Preliminary Data Sheet July 2004 CE64-Type SONET/SDH OC-192/STM-64 and 10 GbE Transponder for Intermediate- or Long-Reach Applications 10.709 Gb/s operation. The CE64 is a third-generation family of 300-pin, MSA compliant transponders for 40km and 80km SONET applications, resulting from a design collaboration between Network Elements, Inc, and TriQuint


    Original     		PDF CE64-Type OC-192/STM-64 CE64S2 GR-253 10GBASE-ER/EW CE64L2 300-pin, DS04-011 g.653 fiber TxTRACE EIA-625 coherent Transponder 10 gb laser diode the1550 card transponder ITU-T G.652 D 300pin pinout

    GAP300

    Abstract: 10E-15 GPD optoelectronics GAP100
    Text: GPD GAP60 GAP60CS GAP75 GAP100 GAP300 High Speed InGaAs Photodiodes High Responsivity High Shunt Resistance Low Capacitance: High Speed Planar Design for High Reliability GPD Optoelectronics Corp. GPDOS00002 GAP60 GAP60CS GAP75 GAP100 GAP300 E sWBfl GAP60/CS


    OCR Scan     		PDF GAP60 GAP60CS GAP75 GAP100 GAP300 GPDOS00002 GAP60/CS 850nm 1300nm 1550nm GAP300 10E-15 GPD optoelectronics

    Germanium Power Devices

    Abstract: GAP100 GAP60CS 10E-15 GAP300 GAP60 GAP75 apd 1550 fall time, dark, capacitance 850nm APD germanium power devices corporation
    Text: E GAP60 GAP60CS GAP75 GAP100 GAP300 Electrical Characteristics @ 25 °C GAP60/CS GAP75 GAP100 60 75 100 O Responsivity @ 850nm 0.10 0.20 0.10(0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) A/W min. (typ.)


    OCR Scan     		PDF GAP60 GAP60CS GAP75 GAP100 GAP300 GAP60/CS GAP75 850nm Germanium Power Devices 10E-15 GAP300 apd 1550 fall time, dark, capacitance 850nm APD germanium power devices corporation

    Untitled

    Abstract: No abstract text available
    Text: GAP 500 GAP1000 GAP2000 GAP3000 □ Electrical Characteristics @ 25 °C GAP500 Active Diameter GAP 1000 GAP2000 GAP3000 mm 0.5 1.0 2.0 3.0 Responsivity @ 850nm 0.10 0.20 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90)


    OCR Scan     		PDF GAP1000 GAP2000 GAP3000 GAP500 GAP2000 850nm 1300nm 1550nm MIL-45208