9575AGJ
Abstract: AP9575AGJ
Text: AP9575AGJ RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Higher Gate-Source Voltage D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 64mΩ ID G -17A S Description The TO-251 package is universally preferred for all commercialindustrial applications and suited for low voltage applications
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AP9575AGJ
O-251
O-251
9575AGJ
9575AGJ
AP9575AGJ
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9575AGH/J-HF-3 P-channel Enhancement-mode Power MOSFET Lower On-resistance D Simple Drive Requirement BV DSS Fast Switching Characteristic RDS ON G RoHS-compliant, halogen-free -60V 64mΩ ID -17A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best
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AP9575AGH/J-HF-3
AP9575AGH-HF-3
O-252
AP9575AGJ-HF-3
O-251
AP9575A
9575AGJ
O-251
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AP9575AGH
Abstract: No abstract text available
Text: AP9575AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Higher Gate-Source Voltage D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -60V RDS ON
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AP9575AGH/J-HF
O-252
AP9575AGJ)
O-251
100ms
AP9575AGH
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AP9575AGH
Abstract: AP9575AGJ
Text: AP9575AGH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Higher Gate-Source Voltage D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 64mΩ ID G -17A S Description G D
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AP9575AGH/J
O-252
AP9575AGJ)
O-251
100us
100ms
AP9575AGH
AP9575AGJ
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Untitled
Abstract: No abstract text available
Text: AP9575AGH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Higher Gate-Source Voltage D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 64mΩ ID G -17A S Description G D
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AP9575AGH/J
O-252
AP9575AGJ)
O-251
100ms
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Untitled
Abstract: No abstract text available
Text: AP9575AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Higher Gate-Source Voltage BVDSS D -60V RDS ON Simple Drive Requirement Fast Switching Characteristic 64m ID G -17A RoHS Compliant & Halogen-Free
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AP9575AGH/J-HF
O-252
AP9575AGJ)
O-251
V00us
100ms
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