Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AP50G60SW Search Results

    AP50G60SW Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AP50G60SW-HF Advanced Power Electronics N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Original PDF

    AP50G60SW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ap50g60

    Abstract: 50A33
    Text: AP50G60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=2.2V@IC=33A ▼ Built-in Fast Recovery Diode VCES 600V IC 45A C G C TO-3P


    Original
    PDF AP50G60SW 100oC ap50g60 50A33

    50A33

    Abstract: IC33A IC 2 5/IC33A
    Text: AP50G60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode VCES 600V IC 45A C G C TO-3P


    Original
    PDF AP50G60SW 50A33 IC33A IC 2 5/IC33A

    AP50G60SW

    Abstract: ap50g60 50A33 IC33A
    Text: AP50G60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode VCES 600V IC 45A C G C


    Original
    PDF AP50G60SW -55itter AP50G60SW ap50g60 50A33 IC33A

    AP50G60SW-HF

    Abstract: a12t ap50g60sw-hf igbt
    Text: AP50G60SW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free


    Original
    PDF AP50G60SW-HF 100oC AP50G60SW-HF a12t ap50g60sw-hf igbt

    Untitled

    Abstract: No abstract text available
    Text: AP50G60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage V CE sat ,Typ.=2.6V@IC=33A Built-in Fast Recovery Diode VCES 600V IC 45A C C G E E Absolute Maximum Ratings


    Original
    PDF AP50G60SW

    50G60

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP50G60SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 45A Low Saturation Voltage Typical V CE sat = 2.6V at IC=33A C (tab) G Built-in Fast Recovery Diode C C E RoHS-compliant, halogen-free


    Original
    PDF AP50G60SW-HF-3 AP50G60SW 50G60SW 50G60