Untitled
Abstract: No abstract text available
Text: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70S is specially designed as main switching devices for universal
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Original
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PDF
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AP10N70S
AP10N70S
265VAC
To-263
O-263
100us
100ms
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g10a
Abstract: marking codes transistors SSs
Text: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70S is specially designed as main switching devices for universal
|
Original
|
PDF
|
AP10N70S
AP10N70S
265VAC
O-263
O-263
10N70S
g10a
marking codes transistors SSs
|
Untitled
Abstract: No abstract text available
Text: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70S is specially designed as main switching devices for universal
|
Original
|
PDF
|
AP10N70S
AP10N70S
265VAC
O-263
O-263
10N70S
|