02N60
Abstract: 02N60J 02N60h 2529V
Text: AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS ON 8.8Ω ID 1.4A S
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AP02N60H/J-H
O-252
AP02N60J-H)
O-251
O-251
02N60J
02N60
02N60J
02N60h
2529V
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ap02n60h
Abstract: AP02N60J
Text: AP02N60H/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Repetitive Avalanche Rated ▼ Fast Switching G ▼ Simple Drive Requirement ▼ RoHS Compliant BVDSS 600V RDS ON 8Ω ID
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AP02N60H/J
O-252
AP02N60J)
O-251
100ms
Fig10.
ap02n60h
AP02N60J
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 100% Avalanche Test Simple Drive Requirement G 600V RDS ON 8 ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J
O-252
AP02N60J)
O-251
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 600V RDS ON 8Ω ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J-HF
O-252
AP02N60J)
O-251
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP02N60H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 700V R DS ON 8.8Ω ID 1.4A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best
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AP02N60H/J-H-HF-3
AP02N60H-H-HF-3
O-252
O-251
AP02N60J-H-HF-3)
AP02N60
02N60J
O-251
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Lower Gate Charge Fast Switching Characteristic G Simple Drive Requirement BVDSS 700V RDS ON 8.8 ID 1.4A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J-H
O-252
AP02N60J-H)
O-251
O-251
02N60J
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP02N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 600V R DS ON 8Ω ID 1.6A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best
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AP02N60H/J-HF-3
O-252
AP02N60H-HF-3
O-252
O-251
AP02N60J-HF-3)
AP02N60
02N60J
O-251
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02N60J
Abstract: 02N60h 02N60 AP02N60J
Text: AP02N60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ 100% Avalanche Test ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J
O-252
AP02N60J)
O-251
O-251
02N60J
02N60J
02N60h
02N60
AP02N60J
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ 100% Avalanche Test ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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PDF
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AP02N60H/J
O-252
AP02N60J)
O-251
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 700V RDS ON 8.8Ω ID 1.4A S Description
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AP02N60H/J-H-HF
O-252
AP02N60J-H-HF)
O-251
100us
100ms
Fig10.
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