02N60
Abstract: 02N60J 02N60h 2529V
Text: AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS ON 8.8Ω ID 1.4A S
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AP02N60H/J-H
O-252
AP02N60J-H)
O-251
O-251
02N60J
02N60
02N60J
02N60h
2529V
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ap02n60h
Abstract: AP02N60J
Text: AP02N60H/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Repetitive Avalanche Rated ▼ Fast Switching G ▼ Simple Drive Requirement ▼ RoHS Compliant BVDSS 600V RDS ON 8Ω ID
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AP02N60H/J
O-252
AP02N60J)
O-251
100ms
Fig10.
ap02n60h
AP02N60J
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AP02N60P
Abstract: *2n60P
Text: AP02N60P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 600V RDS ON 8Ω ID 2A S Description
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AP02N60P
O-220
O-220
100ms
Fig10.
AP02N60P
*2n60P
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02n60i
Abstract: No abstract text available
Text: AP02N60I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G 650V RDS ON 8 ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power
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AP02N60I-A
O-220CFM
O-220CFM
02N60I
02n60i
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1A12C
Abstract: No abstract text available
Text: AP02N60T-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement 700V RDS ON 9Ω ID G ▼ RoHS Compliant & Halogen-Free BVDSS
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AP02N60T-H-HF
100us
100ms
Fig10.
1A12C
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 100% Avalanche Test Simple Drive Requirement G 600V RDS ON 8 ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J
O-252
AP02N60J)
O-251
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP02N60T-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristics Simple Drive Requirement ID G 700V 9 0.3A RoHS Compliant & Halogen-Free S S Description
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AP02N60T-H-HF
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 600V RDS ON 8Ω ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J-HF
O-252
AP02N60J)
O-251
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP02N60H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 700V R DS ON 8.8Ω ID 1.4A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best
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AP02N60H/J-H-HF-3
AP02N60H-H-HF-3
O-252
O-251
AP02N60J-H-HF-3)
AP02N60
02N60J
O-251
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AP02N60I
Abstract: to 220cfm
Text: AP02N60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power
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AP02N60I
O-220CFM
O-220CFM
20N60I
AP02N60I
to 220cfm
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Untitled
Abstract: No abstract text available
Text: AP02N60P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G ▼ Halogen Free & RoHS Compliant BVDSS 600V RDS ON 8Ω ID
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AP02N60P-HF
O-220
O-220
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Lower Gate Charge Fast Switching Characteristic G Simple Drive Requirement BVDSS 700V RDS ON 8.8 ID 1.4A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J-H
O-252
AP02N60J-H)
O-251
O-251
02N60J
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AP02N60I
Abstract: No abstract text available
Text: AP02N60I Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Repetitive Avalanche Rated D ▼ Fast Switching ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 2A S Description The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power
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AP02N60I
O-220CFM
AP02N60I
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02n60i
Abstract: 02N60 A02N60I
Text: AP02N60I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G BVDSS 650V RDS ON 8Ω ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power
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AP02N60I-A
O-220CFM
ContinuousTO-220CFM
O-220CFM
02N60I
02n60i
02N60
A02N60I
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Untitled
Abstract: No abstract text available
Text: AP02N60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Simple Drive Requirement G BVDSS 600V RDS ON 8 ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power
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AP02N60I
O-220CFM
O-220CFM
20N60I
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Untitled
Abstract: No abstract text available
Text: AP02N60P-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 650V ▼ Fast Switching Characteristics RDS ON 8Ω ▼ Simple Drive Requirement ID 2A ▼ RoHS Compliant & Halogen-Free
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AP02N60P-A-HF
O-220
O-220
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP02N60I-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free BVDSS 650V RDS ON 8Ω
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AP02N60I-A-HF
O-220CFM
100ms
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP02N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 600V R DS ON 8Ω ID 1.6A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best
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AP02N60H/J-HF-3
O-252
AP02N60H-HF-3
O-252
O-251
AP02N60J-HF-3)
AP02N60
02N60J
O-251
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Untitled
Abstract: No abstract text available
Text: AP02N60I Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Repetitive Avalanche Rated D ▼ Fast Switching ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 2A S Description The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power
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AP02N60I
O-220CFM
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02N60J
Abstract: 02N60h 02N60 AP02N60J
Text: AP02N60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ 100% Avalanche Test ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J
O-252
AP02N60J)
O-251
O-251
02N60J
02N60J
02N60h
02N60
AP02N60J
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ 100% Avalanche Test ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial
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AP02N60H/J
O-252
AP02N60J)
O-251
100us
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP02N60P Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Repetitive Avalanche Rated BVDSS 600V Fast Switching RDS ON 8 Simple Drive Requirement ID 2A RoHS Compliant G TO-220 D S Description D The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,DC-AC
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AP02N60P
O-220
O-220
100ms
Fig10.
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Untitled
Abstract: No abstract text available
Text: AP02N60H/J-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 700V RDS ON 8.8Ω ID 1.4A S Description
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AP02N60H/J-H-HF
O-252
AP02N60J-H-HF)
O-251
100us
100ms
Fig10.
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ap40n03p
Abstract: ap60n03p AP80N03P AP70T03P mosfet 8000 AP70L02P AP85L02P N-Channel MOSFET 200v AP85L02 AP15N03P
Text: Power MOSFET TO-220 RDS ON Max(mohm) Part No. BV DSS(V) I D(A) P D(W) Application V GS@10V V GS@4.5V AP40T03P 25 45 28 31.3 M/B,DC/DC AP70T03P 9 18 60 53 M/B,DC/DC AP50L02P 17 35 40 45 M/B,DC/DC,SPS 12 26 50 62.5 M/B,DC/DC AP70L02P 9 17 66 66 M/B,DC/DC
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O-220
AP40T03P
AP70T03P
AP50L02P
AP70L02P
AP85L02P
AP88L02P
AP15N03P
AP20N03P
AP40N03P
ap40n03p
ap60n03p
AP80N03P
AP70T03P
mosfet 8000
AP70L02P
AP85L02P
N-Channel MOSFET 200v
AP85L02
AP15N03P
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