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    AP DACE SIC Search Results

    AP DACE SIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10H120H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, TO-247-2L Visit Toshiba Electronic Devices & Storage Corporation

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    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DAC-8800 OCTAL 8-BIT CMOS PMÏ D /A CONVERTER P re c isio n M o n o lith ic s Inc. FEATURES G E N E R A L D ES C R IPTIO N * • * • * * • • T h e D A C -8 8 0 0 T rim D A C is designed to be a general purpose digitally controlled voltage adjustm ent d evice. T h e output


    OCR Scan     		DAC-8800 PDF

    T2D 95

    Abstract: es310 CMSJ MARK CODE UA771 652 ITT ap dace sic CC1110x D70f
    Text: NEC USER'S MANUAL V853 32/16-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY HARDWARE iiPD703003 /¿PD70F3003 Document No. U10913EJ2V0UM00 (2nd edition) Date Published February 1997 N NEC Corporation 1 996 Printed in Japan • b 4 2 7S 25 DDThTlB =ÎDT ■


    OCR Scan     		V853TM 32/16-BIT uPD703003 uPD70F3003 U10913EJ2V0UM00 b4275E5 T2D 95 es310 CMSJ MARK CODE UA771 652 ITT ap dace sic CC1110x D70f PDF