AOT1N60
Abstract: No abstract text available
Text: AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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AOT1N60
AOT1N60
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AOT1N60
Abstract: No abstract text available
Text: AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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AOT1N60
AOT1N60
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Untitled
Abstract: No abstract text available
Text: AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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AOT1N60
AOT1N60
AOT1N60L
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AOT1N60
Abstract: AOT9600 AOTF
Text: AOT1N60 1.3A, 600V N-Channel MOSFET formerly engineering part number AOT9600 General Description Features The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT1N60
AOT9600
AOT1N60
O-220
AOT9600
AOTF
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Untitled
Abstract: No abstract text available
Text: AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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AOT1N60
AOT1N60
AOT1N60L
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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AOT8N60
Abstract: AOTF8N60
Text: AOT8N60 / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description Features The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
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AOT8N60
AOTF8N60
AOT9606/AOTF9606
AOT8N60
AOTF8N60
O-220
O-220F
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MOSFETs
Abstract: N mosfet 100v 500A uis test AO4468 for bipolar junction diode used for MOSFET cross AOT1N60 high voltage mosfet
Text: dV/dt Ratings for Low Voltage and High Voltage Power MOSFET Fei Wang , Wei Wang, Anup Bhalla 1. Abstract To better understand and utilize AOS power MOSFETs, it is important to understand the design and ratings. Voltage ramp and diode recovery related dV/dt and avalanche breakdown UIS are explained and the inter-relationship
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