Untitled
Abstract: No abstract text available
Text: AON7408 30V N-Channel MOSFET General Description Product Summary The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. ID (at VGS=10V) 30V
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AON7408
AON7408
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Untitled
Abstract: No abstract text available
Text: AON7408 30V N-Channel MOSFET General Description Features The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. VDS (V) = 30V ID = 23A (VGS = 10V)
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AON7408
AON7408
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Untitled
Abstract: No abstract text available
Text: AON7408 30V N-Channel MOSFET General Description Product Summary • The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. VDS 30V 18A ID (at VGS=10V)
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AON7408
AON7408
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AON7408
Abstract: Design with PIN diode alpha
Text: AON7408 30V N-Channel MOSFET General Description Features The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. VDS (V) = 30V ID = 23A (VGS = 10V)
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AON7408
AON7408
Design with PIN diode alpha
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AON7408L
Abstract: AON7408
Text: AON7408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications.
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AON7408
AON7408
AON7408L
-AON7408L
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Untitled
Abstract: No abstract text available
Text: AON7408 30V N-Channel MOSFET General Description Product Summary • The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. VDS 30V 18A ID (at VGS=10V)
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AON7408
AON7408
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AON7408
Abstract: No abstract text available
Text: AON7408 30V N-Channel MOSFET General Description Features The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. VDS (V) = 30V (V GS = 10V)
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AON7408
AON7408
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Untitled
Abstract: No abstract text available
Text: AON7408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7408 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in general purpose applications. Standard Product AON7408 is
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AON7408
AON7408
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Untitled
Abstract: No abstract text available
Text: AON7408 30V N-Channel MOSFET General Description Product Summary • The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. VDS 30V 18A ID (at VGS=10V)
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AON7408
AON7408
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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SY8033BDBC
Abstract: AR8152 B201006 ALC271 LA-6222P UB6252NF RT8209BGQW ALC271X KB926QFE0 PAV70
Text: A B C D E 1 1 Compal Confidential 2 2 PAV70 DDR3 Schematics Document Intel Pineview Processor with Tigerpoint + DDRIII 2010-06-25 3 3 REV: 1.0 4 4 2006/08/18 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/8/18 Deciphered Date
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PAV70
R1325
100k-ohm
C1109,
C1111,
C1112,
C1156
C1163
C1166,
CustomLA-6421P
SY8033BDBC
AR8152
B201006
ALC271
LA-6222P
UB6252NF
RT8209BGQW
ALC271X
KB926QFE0
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AO4946
Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22
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KB930
Abstract: ENE KB930QF A1 rtd2132 rtd2132s RTL8111E RT8205Lzqw LA-7552P KB930QF A1 ENE KB930 rts5137
Text: A B C D E 1 1 Compal Confidential 2 2 QBL50 Schematics Document AMD Sabine APU Llano / Hudson M2_M3 / Vancouver Whistler UMA only / PX Muxless with BACO 3 3 2010-02-16 LA-7552P REV: 0.03 4 4 2010/08/04 Issued Date 2010/08/04 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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QBL50
LA-7552P
LA-4902P
KB930
ENE KB930QF A1
rtd2132
rtd2132s
RTL8111E
RT8205Lzqw
KB930QF A1
ENE KB930
rts5137
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ALC271X
Abstract: alc271 SY8033 SY8033BDBC ar8132l MP2121 tps51125 AON7408L nav50 ALC271X-GR
Text: A B C D E PJP1 ZZZ1 PCB D0DAZ@ ZZZ3 ZZZ4 LA-6091P D0DA@ LS-6094P D0DA@ ZZZ5 45@ DCIN DC301008S00 LS-6095P D0DA@ 1 1 ZZZ2 PCB E0DAZ@ ZZZ6 ZZZ8 LA-6091P E0DA@ LS-6096P E0DA@ ZZZ7 LS-6097P E0DA@ ZZZ9 ZZZ10 LS-6098P E0DA@ LS-6099P E0DA@ Compal Confidential 2 2
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LA-6091P
LS-6094P
LS-6095P
DC301008S00
ZZZ10
LS-6096P
LS-6097P
LS-6098P
LS-6099P
ALC271X
alc271
SY8033
SY8033BDBC
ar8132l
MP2121
tps51125
AON7408L
nav50
ALC271X-GR
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