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    AOD4120 Price and Stock

    Alpha & Omega Semiconductor AOD4120

    MOSFET N-CH 20V 25A TO252
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    Alpha & Omega Semiconductor AOD4120L

    MOSFET N-CH 20V 25A TO252
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    AOD4120 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AOD4120 Alpha & Omega Semiconductor SMPS - N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AOD4120 Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AOD4120L Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO252 Original PDF

    AOD4120 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


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    PDF AOD4120 AOD4120 O-252 DraiD4120

    ao412

    Abstract: ao41
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose


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    PDF AOD4120 AOD4120/L AOD4120L -AO4120L O-252 ao412 ao41

    AOD4120L

    Abstract: AOD4120
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard


    Original
    PDF AOD4120 AOD4120 AOD4120L O-252

    AOD4120

    Abstract: No abstract text available
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original
    PDF AOD4120 AOD4120 O-252 CurrentOD4120

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original
    PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


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