AO4609
Abstract: mm4609 aos Lot Code Week ALPHA MARKING CODE
Text: July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side
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AO4609
AO4609
Drai012
mm4609
aos Lot Code Week
ALPHA MARKING CODE
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Untitled
Abstract: No abstract text available
Text: AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side
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AO4609
AO4609
AO4609L
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Untitled
Abstract: No abstract text available
Text: AOS Semiconductor Product Reliability Report AO4609/AO4609L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Nov 30, 2005 1 This AOS product reliability report summarizes the qualification result for AO4609. Accelerated
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AO4609/AO4609L,
AO4609.
AO4609passes
10-5eV
Mil-Std-105D
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AO4609
Abstract: Complementary AO4609L
Text: AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side
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AO4609
AO4609
AO4609L
Complementary
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM14609AA-N •General Description ■Features ELM14609AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • N-channel P-channel Vds=30V Id=8.5A(Vgs=10V) Rds(on) < 18mΩ(Vgs=10V) Rds(on) < 28mΩ(Vgs=4.5V)
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ELM14609AA-N
ELM14609AA-N
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