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    AO4604 Search Results

    AO4604 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AO4604 Unknown Complementary Enhancement Mode Field Effect Transistor Original PDF

    AO4604 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AO4604

    Abstract: Complementary
    Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.


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    PDF AO4604 AO4604 AO4604L -AO4604L Complementary

    transistor f613

    Abstract: transistor bc 567
    Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.


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    PDF AO4604 AO4604 AO4604L -AO4604L 16789ABA2CDE9AFDC transistor f613 transistor bc 567

    ao4604

    Abstract: No abstract text available
    Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other


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    PDF AO4604 AO4604 AO4604L

    74a diode

    Abstract: AO4604A
    Text: AO4604A Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard


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    PDF AO4604A 74a diode

    AO4604

    Abstract: 4604 inverter AO4604 SO8 4604 ALPHA SEMICONDUCTOR 4604
    Text: Nov 2002 AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.


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    PDF AO4604 AO4604 4604 inverter AO4604 SO8 4604 ALPHA SEMICONDUCTOR 4604

    HTGB

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO4604/AO4604L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Jan 11, 2006 1 This AOS product reliability report summarizes the qualification result for AO4604. Accelerated


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    PDF AO4604/AO4604L, AO4604. AO4604passes Mil-Std-105D HTGB

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM14604AA-N •General Description ■Features ELM14604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=6.9A(Vgs=10V) Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)


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    PDF ELM14604AA-N ELM14604AA-N

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM14604AA-N •General Description ■Features ELM14604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=6.9A(Vgs=10V) Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)


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    PDF ELM14604AA-N ELM14604AA-N

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


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    PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM14604AA-N •概要 ■特長 ELM14604AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。


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    PDF ELM14604AA-N

    semiconductor cross reference

    Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


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    PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference

    复合

    Abstract: ELM14604AA
    Text: 复合沟道 MOSFET ELM14604AA-N •概要 ■特点 ELM14604AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=6.9A Vgs=10V


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    PDF ELM14604AA-N 复合 ELM14604AA