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    Abstract: No abstract text available
    Text: AO4458 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4458 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is ESD protected and it is suitable for use in load switching and general


    Original     		PDF AO4458 AO4458

    AO4458

    Abstract: ao44
    Text: AO4458 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4458/L uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4458 and


    Original     		PDF AO4458 AO4458/L AO4458 AO4458L -AO4458L ao44