Untitled
Abstract: No abstract text available
Text: Rev 3: Nov 2004 AO4413, AO4413L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable
|
Original
|
PDF
|
AO4413,
AO4413L
AO4413
|
MX3000ASG
Abstract: EM8475 compal PW172A AK4363 c3381c sst39vf080-70-4c-ei TE7782 Compal Electronics 915GM
Text: A B C D E 1 1 2 2 WT2 HAR00 LA-2831 Schematic 3 3 4 4 2005/03/11 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2006/03/11 Deciphered Date SCHEMATIC, M/B LA-2831 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
|
Original
|
PDF
|
HAR00
LA-2831
LA-2831
MX3000ASG
EM8475
compal
PW172A
AK4363
c3381c
sst39vf080-70-4c-ei
TE7782
Compal Electronics
915GM
|
CX20551
Abstract: MTP81 R5538 BAV88 isl6260 HP PAVILION G6 Quanta R52 HP Pavilion g6 CF 309 ICS954206AGT quanta
Text: 1 2 3 4 5 6 PCB STACK UP 8 CT6 BLOCK DIAGRAM LAYER 1 : TOP LAYER 2 : GND Calistoga / Yonah /ICH-7m CPU THERMAL SENSOR LAYER 3 : IN1 A 7 CPU Yonah/Merom LAYER 4 : IN2 LAYER 5 : VCC XXX Pins uPGA LAYER 6 : BOT 14.318MHz PG 5 PG 38 CLOCK GEN PG 3,4 SBLINKCLK, SBLINKCLK#
|
Original
|
PDF
|
318MHz
MAX1845
56pins
16x16
MAX1544
OSC14M
MAX1999
LED12
LED11
31CT6MB0016
CX20551
MTP81
R5538
BAV88
isl6260
HP PAVILION G6 Quanta R52
HP Pavilion g6
CF 309
ICS954206AGT
quanta
|
Untitled
Abstract: No abstract text available
Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM
|
Original
|
PDF
|
AO4413
AO4413/L
AO4413
AO4413L
-AO4413L
|
AO4413L
Abstract: AO4413
Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM
|
Original
|
PDF
|
AO4413
AO4413/L
AO4413
AO4413L
-AO4413L
|
max1532a
Abstract: compal ATI-RS400MD diod PR150 keyboard and touchpad schematic sst39vf080-70-4c-ei schematic lcd inverter dell a21l A32L Socket AM2
Text: A B C D E 1 1 LC2 Schematic 2 2 Pentium-M RS400MD+SB400 DATE: Apr. 7th Revision: 2.0 3 3 4 4 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL AND TRADE SECRET INFORMATION. THIS SHEET MAY NOT BE TRANSFERED FROM THE CUSTODY OF THE COMPETENT DIVISION OF R&D
|
Original
|
PDF
|
RS400MD
SB400
LA-2641P
max1532a
compal
ATI-RS400MD
diod PR150
keyboard and touchpad schematic
sst39vf080-70-4c-ei
schematic lcd inverter dell
a21l
A32L
Socket AM2
|
Untitled
Abstract: No abstract text available
Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
|
Original
|
PDF
|
AO4413
AO4413
AO4413L
AO4413L
|
Untitled
Abstract: No abstract text available
Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
|
Original
|
PDF
|
AO4413
AO4413
AO4413L
|
