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    MOSFET N-CH 20V 6.5A SOT23-3
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    AO3416L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO3416L Unknown N-Channel Enhancement Mode Field Effect Transistor Original PDF

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    AO3416L

    Abstract: AO3416
    Text: Rev 2: Nov 2004 AO3416, AO3416L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This


    Original
    AO3416, AO3416L AO3416 O-236 OT-23) AO3416L PDF

    AO3416

    Abstract: AO3416L
    Text: AO3416 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3416/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original
    AO3416 AO3416/L AO3416 AO3416L -AO3416L O-236 OT-23) PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3416 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3416 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original
    AO3416 AO3416 AO3416L O-236 OT-23) 25olts) PDF