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    AO31 Search Results

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    AO31 Price and Stock

    Alpha & Omega Semiconductor AO3162

    MOSFET N-CH 600V 34MA SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO3162 Reel 15,000 3,000
    • 1 -
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    • 10000 $0.09817
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    AO3162 Cut Tape 2,510 1
    • 1 $0.42
    • 10 $0.327
    • 100 $0.1963
    • 1000 $0.12362
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    AO3162 Digi-Reel 1
    • 1 $0.42
    • 10 $0.327
    • 100 $0.1963
    • 1000 $0.12362
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    Quest Components AO3162 5,178
    • 1 $0.276
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    • 100 $0.276
    • 1000 $0.276
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    Alpha & Omega Semiconductor AO3160E

    MOSFET N-CH 600V 40MA SOT23A-3
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    DigiKey AO3160E Cut Tape 4,726 1
    • 1 $0.41
    • 10 $0.318
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    AO3160E Reel 3,000 3,000
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    • 10000 $0.0875
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    AO3160E Digi-Reel 1
    • 1 $0.41
    • 10 $0.318
    • 100 $0.1909
    • 1000 $0.12019
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    TME AO3160E 2,365 5
    • 1 -
    • 10 $0.293
    • 100 $0.152
    • 1000 $0.138
    • 10000 $0.129
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    OWON Technology TAO3102A

    TABLET O-SCOPE,2CH/100MHZ/14-BIT
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    DigiKey TAO3102A Box 50 1
    • 1 $839
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    TME TAO3102A 4 1
    • 1 $702.24
    • 10 $658.35
    • 100 $658.35
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    OWON Technology TAO3102

    TABLET O-SCOPE, 2CH/100MHZ/8-BIT
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    DigiKey TAO3102 Box 47 1
    • 1 $579
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    TME TAO3102 5 1
    • 1 $491
    • 10 $461
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    OWON Technology TAO3122

    TABLET O-SCOPE, 2CH/120MHZ/8-BIT
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    DigiKey TAO3122 Box 47 1
    • 1 $599
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    TME TAO3122 6 1
    • 1 $512
    • 10 $480
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    AO31 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AO311 austriamicrosystems AG AO311 is an AND / OR circuit providing the logical function Q = (A.B.C+D+E). Original PDF
    AO3160 Alpha & Omega Semiconductor High Voltage - 600V, 0.04A N-Channel MOSFET Original PDF
    AO3160E Alpha & Omega Semiconductor MOSFET N-CH 600V 40MA SOT23A-3 Original PDF
    AO3162 Alpha & Omega Semiconductor High Voltage - 600V, 0.034A N-Channel MOSFET Original PDF

    AO31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AO3162 600V,0.034A N-Channel MOSFET General Description Product Summary The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with


    Original
    PDF AO3162 AO3162 OT23A

    Untitled

    Abstract: No abstract text available
    Text: AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with


    Original
    PDF AO3160 AO3160 OT23A

    JESD22-A108

    Abstract: JESD22A108 mosfet reliability testing report On semiconductor power MOSFET reliability report JEDEC htrb AO3162 MOSFET reliability report
    Text: AOS Semiconductor Product Reliability Report AO3162, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO3162. Accelerated environmental tests are performed on a specific sample size, and then followed


    Original
    PDF AO3162, AO3162. AO3162 R77x168 6x77x1000) JESD22-A108 JESD22A108 mosfet reliability testing report On semiconductor power MOSFET reliability report JEDEC htrb MOSFET reliability report

    AO3162

    Abstract: N-Channel MOSFET Qg (nC)
    Text: AO3162 600V,0.034A N-Channel MOSFET General Description Product Summary The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with


    Original
    PDF AO3162 AO3162 OT23A N-Channel MOSFET Qg (nC)

    Untitled

    Abstract: No abstract text available
    Text: MB88344PFV 1/2 IL16 C-MOS D/A CONVERTER 25 AO28 26 AO29 27 AO30 28 AO31 VCC 29 NC 30 VDD2 31 VSS2 32 33 AO32 34 AO33 35 AO34 36 AO35 —TOP VIEW— AO6 43 18 AO21 AO7 44 17 AO20 AO8 45 16 AO19 AO9 46 15 AO18 AO10 47 14 AO17 AO11 48 13 AO16 AO15 12 19 AO22


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    PDF MB88344PFV

    AO311

    Abstract: No abstract text available
    Text: CUB AO311 R Austria Mikro Systeme International 0.6 µm CMOS AO311 is an AND / OR circuit providing the logical function Q = A.B.C+D+E . Truth Table Capacitance A B C D E Q L X X X X H X L X X X H X X L X X H L L L H X X L L L X H X L L L H H H Ci (pF) A


    Original
    PDF AO311 AO311

    Untitled

    Abstract: No abstract text available
    Text: AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with


    Original
    PDF AO3160 AO3160 OT23A

    HTRB

    Abstract: mosfet reliability testing report HTGB JEDEC htrb On semiconductor power MOSFET reliability report reliability testing report power MOSFET reliability report "power MOSFET" reliability report mosfet HTRB MOSFET reliability report
    Text: AOS Semiconductor Reliability Report AO3160, 600V 0.04A N-Channel MOSFET Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 This report applies for 600V 0.04A N-Channel MOSFET AO3160 The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to


    Original
    PDF AO3160, AO3160 AO3160 HTRB mosfet reliability testing report HTGB JEDEC htrb On semiconductor power MOSFET reliability report reliability testing report power MOSFET reliability report "power MOSFET" reliability report mosfet HTRB MOSFET reliability report

    N-Channel

    Abstract: MOSFET Qg (nC) AO3160
    Text: AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with


    Original
    PDF AO3160 AO3160 OT23A N-Channel MOSFET Qg (nC)

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    113 y

    Abstract: HA 1329 QN-08 1329 y-448 AO2222
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5


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    PDF 147ns, 00866pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 113 y HA 1329 QN-08 1329 y-448 AO2222

    AO211

    Abstract: IX 3354 AO222 ND2D2
    Text: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V1.1)


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    PDF STD131 AO211 IX 3354 AO222 ND2D2

    tl 0741

    Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


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    PDF STDL130 tl 0741 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor

    GCK 164

    Abstract: samsung 649 ao21 OA21D
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.204ns, one fanout (SL = 0.00486pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2_lp ad2b_lp ad2bd2_lp


    Original
    PDF 204ns, 00486pF, 048pF, 048pF ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 GCK 164 samsung 649 ao21 OA21D

    MX2D2

    Abstract: OA2111 AO222 AO211 STD130 CHAPTER 1 Introduction to Power Semiconductors standard cell library samsung soc
    Text: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V3.1)


    Original
    PDF STD130 MX2D2 OA2111 AO222 AO211 STD130 CHAPTER 1 Introduction to Power Semiconductors standard cell library samsung soc

    TDA 9361 PS

    Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
    Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


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    PDF STD130 STD130 24nW/MHz ARM920T/ARM940T, TDA 9361 PS tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088

    CTC 880

    Abstract: vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


    Original
    PDF STD111 CTC 880 vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284

    dl2d

    Abstract: AO222 AO211 LD1A STD110 Samsung 546 FD2QD2
    Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


    Original
    PDF MDL110 STD110 PLL2013X dl2d AO222 AO211 LD1A STD110 Samsung 546 FD2QD2

    AO11

    Abstract: AO36 M62370GP AO-21
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT FEATURES: IDT49C460 IDT49C460A IDT49C460B IDT49C460C IDT49C460D IDT49C460E DESCRIPTION: • Fast Detect 10ns max. 12ns (max.) 16ns (max.) 25ns (max.) 30ns (max.) 40ns (max.) Correct 14ns (max.) 18ns (max.)


    OCR Scan
    PDF 32-BIT IDT49C460 IDT49C460A IDT49C460B IDT49C460C IDT49C460D IDT49C460E

    Untitled

    Abstract: No abstract text available
    Text: G2 WHITE /M ICROELECTRONICS W M C64P603EV-XQ3M RISC 603e M ONOLITHIC MICROPROCESSOR PR ELIM INARY * FEATURES • Processor C lock Frequencies of 80M Hz and 100M Hz • 16KByte d a ta c a c h e -fo u r-w a y s e t-a sso cia tive , ph ysica lly addressed; Least R ecently Used LRU replacem ent


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    PDF 16KByte C64P603EV-XQ3M P603E

    Untitled

    Abstract: No abstract text available
    Text: m April 1991 Semiconductor NS32GX320-20/NS32GX320-25/NS32GX320-30 High-Performance 32-Bit Integrated System Processor General Description Features The NS32GX320 is a highly-integrated high-performance member of the Series 32000/EP family of National’s Em­


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    PDF NS32GX320-20/NS32GX320-25/NS32GX320-30 32-Bit NS32GX320 32000/EPâ

    V9990

    Abstract: S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5
    Text: YAMAHA L S i E-VDP-III APPLICATION MANUAL YAMAHA V 9990 APPLICATION MANUAL CATALOG No. : LSI-2499903 1992. 09 NOTICES YAMAHA reserves the right to make changes in specifications in order to improve performance without notice. The application circuit herein are presented only as an example.


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    PDF V9990 LSI-2499903 CA95131 S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5

    TRANSISTOR SMD T1P

    Abstract: schematic computer 80386 chip mother board sis 662 NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS 80486 microprocessor circuit diagram SmD TRANSISTOR a77 SMD Transistor jly PALCE16V8-10 ksp 13 f10 ksp 13 replacement
    Text: a Dynamic Memory Design 1991/1992 Data Book/Handbook Advanced Micro Devices % M aeey D ynam ic M em ory D esign 1991/1992 Data Book/Handbook D V A N C E D M I C R O D E V I C E S 1991 Advanced Micro Devices, Inc. A dvanced Micro Devices reserves the right to make changes in its products


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    PDF accuram29C676 07606C Am7202A Am7203A Am7204A Am7205A TRANSISTOR SMD T1P schematic computer 80386 chip mother board sis 662 NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS 80486 microprocessor circuit diagram SmD TRANSISTOR a77 SMD Transistor jly PALCE16V8-10 ksp 13 f10 ksp 13 replacement