"low threshold mosfet"
Abstract: TN2524N8 VN2210N3 VN2224 VN2224N3 ICM7555 IRF520 TN0604N3 TN2524N
Text: AN-D02 Application Note Low-Threshold TN/TP Series MOSFETs: Structure, Performance and Applications Introduction age. One method of reducing threshold voltage is to reduce the body dopant concentration until the required VGS th is met. This technique by itself is dangerous because it degrades other device parameters. The first and most important of these is drain-source breakdown (BVDSS), which is a
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AN-D02
"low threshold mosfet"
TN2524N8
VN2210N3
VN2224
VN2224N3
ICM7555
IRF520
TN0604N3
TN2524N
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HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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product25
HV9961
2N7002 MARKING 1702
HV9963
HV9910
hv9910b
SR087
str 6655
STR 6656
DN2450
HV509
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STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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MTPSP25
Abstract: No abstract text available
Text: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage,
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MTP5P25
Y145M
Y145M,
AND-02
314B03
MTPSP25
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7BFL
Abstract: No abstract text available
Text: M O TO RO LA SC X ST RS /R F bSE D b 3 b ? 2 5 4 ODTflbbH DIE • MOTb MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MTP4N08E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate
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MTP4N08E
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
O-220)
7BFL
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mtp2p45
Abstract: TP2P45 45MTP 314B03 HF 1932
Text: MOT OROL A SC XSTRS/R b3b7254 F GDTñbHH 224 • MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA M TP 2P 45 M TP 2P 50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TT These TMOS Power FETs are designed fo r medium voltage,
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b3b7254
MTP2P50
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
mtp2p45
TP2P45
45MTP
HF 1932
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A0I21
Abstract: m245c MS41C OR-02 BUF01 IC 74ls244 RSC-20 M-540C NOR02 NAND02
Text: 77441^0 ItOQBQDKI RI COH DDD17DD C ORP/ TbT H P C H T - * + 2 - l - ¿ ? *f ELECTRONIC No.86-0 3 Ì-I9 86 CMOS STANDARD CELL RSC-20 Series •FEATURES ■GENERAL DESCRIPTION • Advanced CM OS Technology R SC -20 s e rie s is a Standard Cell s e rie s using 2um silicon gate
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DDD17DD
RSC-20
A0I21
m245c
MS41C
OR-02
BUF01
IC 74ls244
M-540C
NOR02
NAND02
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM6709BR/D SEMICONDUCTOR TECHNICAL DATA Product Preview MCM6709BR 64K x 4 Bit Static RAM The MCM6709BR is a 262,144 bit static random access memory organized as 65,536 words of 4 bits. Static design eliminates the need for external clocks or
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MCM6709BR/D
MCM6709BR
MCM6709BR
CM6709BR
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Harris CA3046
Abstract: CA3046 7h0 ITT ICAN-5296
Text: S E MI CON] SECTOR 4DE D 4302271 J i HARRIS 003220b I HAS CA3045 CA3046 General Purpose N -P-N Transistor Arrays August 1991 fea tu res Description • Two Matched Tran sisto rs: V b ë Matched ±5mV; Input Offset Current 2pA Max at lc = 1mA The CA304S and CA3046 each consist of fivo general
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003220b
CA3045
CA3046
CA304S
CA3046
Harris CA3046
7h0 ITT
ICAN-5296
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AOI31
Abstract: RSC-15 74LS94 EK-044-9004 ic 74ls83 CSR b4c M240C 4520C M165C bf368
Text: n n EK-044-9004 CMOS Gate Array 5GV Series The RICOH gate array 5GV series complies with the CMOS 1.5/i rule, and offers high speed operation with a gate delay time of 1.0 ns. The 5GV series inherits the rich library of 5GF gate array series. The cell library is compatible with
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EK-044-9004
RSC-15
74LS165
74LS197
LS240
M390C
M393C
M540C
40I7C
4028C
AOI31
74LS94
EK-044-9004
ic 74ls83
CSR b4c
M240C
4520C
M165C
bf368
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Untitled
Abstract: No abstract text available
Text: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM
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cr122
340F-03
O-247)
O-251)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM6709B/D SEMICONDUCTOR TECHNICAL DATA Product Preview MCM6709B 64K x 4 Bit Static RAM The MCM6709B is a 262,144 bit static random access memory organized as 65,536 words of 4 bit. Static design eliminates the need for external clocks or tim
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MCM6709B/D
MCM6709B
MCM6709B
MCM6709B,
6709B
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M38510
Abstract: No abstract text available
Text: T h i s M a t e r i a l C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r 1. SCOPE 1 1 Scope. This drawing describes the requirements for monolithic silicon, advanced SctottlJrffL. J-K flip-flops microcircuits. This dmrtng proxies for . 1,»1 of microc.irant quality
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J54ALS109AW
M38510/37102BFX
84000012X
ISNJ54ALS109AFK1
M38510/37102B2X
8400002EX
ISNJ54ALS112AJ
M38510/37103BEX
8400002FX
ISNJ54ALS112AW
M38510
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TP8N20
Abstract: 8n20 314B03 MTP8N20
Text: MOTOROLA SC XSTRS/R F MOTOROLA bflE D • b B b V E S 1! GDTflSbfi ÔÔ7 ■ M O T b ■ SEM ICO NDUCTOR TECHNICAL DATA _ M TM 8N20 M T P 8N 2 0 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is to r IM-Channel Enhancement-Mode Silicon Gate
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21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
O-220)
TP8N20
8n20
MTP8N20
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM6227B/D SEMICONDUCTOR TECHNICAL DATA MCM6227B 1M x 1 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 810B-03 The MCM6227B is a 1,048,576 bit static random-access memory organized as 1,048,576 words of 1 bit. Static design eliminates the need for external clocks
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MCM6227B/D
MCM6227B
28-lead
1-3521-e315
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V3 13005
Abstract: 3005-4 3010 IC 4009A ALI 3105 data seet ne 55 n HA 11225 4041a ANI 1015 en1 3007
Text: F MIL-M-38510/55F 30 April 1984 SUPEftSËDÏNG MIL-M-38510/55E 2 D e c e m b e r 1981 MILITARY SPECIFICATION MICRO C I R C U I T S , DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLEMENT BUFFER, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d f o r u s e
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MIL-M-38510/55F
MIL-M-38510/55E
MIL-M-38510,
1984-705-040/A3751
V3 13005
3005-4
3010 IC
4009A
ALI 3105
data seet ne 55 n
HA 11225
4041a
ANI 1015
en1 3007
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MTP8p10
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F böE ]> • b3b7ES4 OD'îflTO'î DOG ■ MOTb M O TO R O LA ■ SEMICONDUCTOR TECHNICAL DATA MTP8P10 Designer's Data Sheet P o w er Field E ffe c t Tran sisto r P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8 AMPERES RDS(on) = 0.4 OHM
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MTP8P10
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
O-220)
MTP8p10
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AOI211
Abstract: MX08 IC TTL 7400 schematic AOI33 8 bit full adder "8 bit full adder" LA01 BCD-TO-7-SEGMENT DECODER 74151H TR-C06
Text: ÉNATL SEUICOND {MEMORY} OSE D | b S O llBb P 0 bl3Cm FGC Series t J^p^ Advanced 2-MlCrOll CMOS Gate Array Family fa T rc h T ld ASchlum bergerCom pany Description Array Organization The FGC Series is an advanced, high performance CMOS gate array family designed for LSI implementation of existing
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FGC6000
7482H
7483H
7485H
7486H
7487H
74125H
74182H
74242H
74244H
AOI211
MX08
IC TTL 7400 schematic
AOI33
8 bit full adder
"8 bit full adder"
LA01
BCD-TO-7-SEGMENT DECODER
74151H
TR-C06
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74LS80
Abstract: 74LS198 74LS150 74LS94 OAI32 74LS179 TTL 74LS198 MUX21H TTL 74ls138 to 7 segment 7476 3 bit ripple counter
Text: 4flE ]> • 77MLjbciO 0001L3M 4bO « P C H T- °J EK-044-9004 CMOS Gate Array 5GV Series RICOH CORP/ ELECTRONIC The RICOH gate array 5GV series complies with the CMOS 1.5ju rule, and offers high speed operation with a gate delay time of 1.0 ns. The 5GV series inherits the rich library of 5GF gate array series. The cell library is compatible with
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77MLjbc
0001L3M
TEK-044-9004
RSC-15
TBF368
M390C
M393C
CM16BR*
M540C
M541C
74LS80
74LS198
74LS150
74LS94
OAI32
74LS179
TTL 74LS198
MUX21H
TTL 74ls138 to 7 segment
7476 3 bit ripple counter
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