SD5000
Abstract: AN301 SD210 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE
Text: AN301 Siliconix HighĆSpeed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of highĆspeed analog switches and switch arrays. It contains an
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AN301
SD210/5000
SD210
SD5000
SST211,
SD5400
2N4959
MRF904
AN301
mosfet 2n7000
siliconix sd210
SD5400
SST211
2N7000
LH0063
SD210DE
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SD5000
Abstract: siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210 SD210DE SD5400 2n7000 equivalent
Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application
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AN301
SD210/5000
SD210
SD5000
SST211,
SD5400
10-Mar-97
siliconix sd210
SD5000N
SST211
VSB uhf modulator analog
AN301
SD210DE
2n7000 equivalent
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AN301
Abstract: SD210 sd5000 SD50001 sst211 sot-143 VSB uhf modulator analog siliconix sd210 equivalent of sd211 2N7000 MOSFET protection VSB uhf modulator
Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics,
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AN301
SD210/5000
SD210
SD5000
SST211,
SD5400
22-Jun-94
10-MHz
2N4959
AN301
SD50001
sst211 sot-143
VSB uhf modulator analog
siliconix sd210
equivalent of sd211
2N7000 MOSFET protection
VSB uhf modulator
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SD210DE
Abstract: AN301 SD214DE
Text: SD210DE/214DE Siliconix NĆChannel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 SD214DE, For applications information see AN301, page 33.
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SD210DE/214DE
SD210DE
SD214DE
SD214DE,
AN301,
P37406Rev.
SD210DE
AN301
SD214DE
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siliconix sd210
Abstract: SD210 SD5000 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400
Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application examples, test data, and other application hints.
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AN301
SD210/5000
SD210
SD5000
SST211,
SD5400
10-Mar-97
2N4959
siliconix sd210
SST211
AN301
mosfet 2n7000
2n4959
VSB uhf modulator analog
Siliconix JFET application note
SD5400
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d312
Abstract: SD5000I AN301 SD5000N SD5001N SD5400CY SD5401CY SD5000 SD5401
Text: SD5000/5400 Series Siliconix NĆChannel Lateral DMOS FETs SD5000I SD5000N SD5001N Product Summary Part Number V BR DS Min (V) SD5400CY SD5401CY VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
d312
SD5000I
AN301
SD5000N
SD5001N
SD5400CY
SD5401CY
SD5000
SD5401
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AN301
Abstract: SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX
Text: SD211DE/SST211 Series Siliconix NĆChannel Lateral DMOS FETs SD211DE SD213DE SD215DE Product Summary Part Number V BR DS Min (V) SST211 SST213 SST215 VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10
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SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
AN301
SD211
SD211DE
SD213DE
SD214
SD215DE
SST211
SST213
SST215
SST215 SILICONIX
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SD5000N
Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
Text: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
AN301,
SD5001
sd5001 siliconix
sd5400
aros
SD5000 SILICONIX
SD5000
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D214D
Abstract: No abstract text available
Text: Tem ic srnççmx_ SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary P a r t N u m b er V br Ds M i» (V) VGS(th) M a* (V) ri)S(on) M ax (Q ) p r ss M ax (p F ) toN M ax (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE
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SD210DE/214DE
SD210DE
SD214DE
SD214DE,
AN301,
Sample-and-H5/94)
SD210DE/214DE
P-37406--
D214D
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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