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    AN2115 NATIONAL SEMICONDUCTOR Search Results

    AN2115 NATIONAL SEMICONDUCTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    AN2115 NATIONAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA0876.003NL

    Abstract: zener diode 4.7V 250MW GRM21BR71E225KA73L murata np0 GCM32ER70J476KE19L zener diode 4.7V PA1005.100NL LM5046 FCX690BTA 48V 100W zener diode
    Text: National Semiconductor Application Note 2115 Ajay Hari February 23, 2011 Introduction Theory of Operation The LM5046 evaluation board is designed to provide the design engineer with a fully functional power converter based on the phase-shifted full-bridge topology to evaluate the


    Original     		PDF LM5046 420kHz 4V/32V AN-2115 PA0876.003NL zener diode 4.7V 250MW GRM21BR71E225KA73L murata np0 GCM32ER70J476KE19L zener diode 4.7V PA1005.100NL FCX690BTA 48V 100W zener diode

    LM5046

    Abstract: fullbridge AN2115 420-kHz NATIONAL SEMICONDUCTOR FIRST National Semiconductor lm5046
    Text: National Semiconductor Application Note 2126 Ajay Hari March 4, 2011 Introduction Theory of Operation The LM5046 reference board is designed based on the phase-shifted full-bridge topology. This board is for reference only and is intended to demonstrate the capability of the


    Original     		PDF LM5046 LM5046. AN2115 420kHz AN-2126 fullbridge 420-kHz NATIONAL SEMICONDUCTOR FIRST National Semiconductor lm5046

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
    Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in­ tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex­


    OCR Scan     		PDF LB20-2 2N2369 AVALANCHE PULSE GENERATOR 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918