ADE-602-096B
Abstract: DP83848 SH7700 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SH7713
REJ09B0288-0150
ADE-602-096B
DP83848
SH7700
Nippon capacitors
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BGY888
Abstract: DIN45004B push-pull
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGY888 860 MHz, 34 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Oct 25 NXP Semiconductors Product specification 860 MHz, 34 dB gain push-pull amplifier FEATURES
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M3D252
BGY888
OT115J
R77/05/pp10
BGY888
DIN45004B
push-pull
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PIR alarm system
Abstract: txal* 228 bs ADE-602-096B dp83848 application 264 bf BT 816 cd0a2 un 816 i 336 SH7700 DP83848
Text: REJ09B0288-0150 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7713 32 Hardware Manual TM SuperH
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REJ09B0288-0150
SH7713
32-Bit
SH7700
HD6417713
PIR alarm system
txal* 228 bs
ADE-602-096B
dp83848 application
264 bf
BT 816
cd0a2
un 816 i 336
DP83848
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGY888 860 MHz, 34 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Oct 25 NXP Semiconductors Product specification 860 MHz, 34 dB gain push-pull amplifier FEATURES BGY888
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M3D252
BGY888
OT115J
R77/05/pp10
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ntc103
Abstract: mac 16N 541 txal* 228 bs MD 202 flame relay ADE-702-230 HD6417710 SH7700 SH7710 cdb 442 Nippon capacitors
Text: SH7710 Group 32 Hardware Manual Renesas 32-Bit RISC Microcomputer SuperH RISC engine Family / SH7700 Series HD6417710 Rev.1.00 2004.1.21 Rev. 1.00, 01/04, page ii of xxxviii Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products
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SH7710
32-Bit
SH7700
HD6417710
REJ09B0079-0100Z
ntc103
mac 16N 541
txal* 228 bs
MD 202 flame relay
ADE-702-230
HD6417710
cdb 442
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGY883 860 MHz, 15 dB gain push-pull amplifier Product specification Supersedes data of 1997 Apr 14 2001 Oct 31 NXP Semiconductors Product specification 860 MHz, 15 dB gain push-pull amplifier FEATURES BGY883
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M3D252
BGY883
OT115J
MSA319
R77/04/pp7
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D248 BGE885 860 MHz, 17 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Oct 31 NXP Semiconductors Product specification 860 MHz, 17 dB gain push-pull amplifier FEATURES BGE885
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M3D248
BGE885
OT115D
R77/04/pp8
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BGE885
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D248 BGE885 860 MHz, 17 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Oct 31 NXP Semiconductors Product specification 860 MHz, 17 dB gain push-pull amplifier FEATURES
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M3D248
BGE885
OT115D
R77/04/pp8
BGE885
DIN45004B
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES BGD802
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M3D252
BGD802
OT115J
613518/07/pp10
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BGY887
Abstract: DIN45004B
Text: DATA SHEET dbook, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J
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M3D252
BGY887
OT115J
MSA319
613518/05/pp10
BGY887
DIN45004B
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footswitch double dpdt
Abstract: No abstract text available
Text: Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì MADE IN THE USA Full Line Catalog ISO 9001:2000 ∙ FDA 510K CLEARANCE ∙ RoHS ∙ WEEE ∙ UL ∙ CSA ∙ TUV ∙ IEC ∙ IP68 ∙ CE ∙ AP
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BGD885
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier
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M3D248
BGD885
OT115D
R77/07/pp8
BGD885
DIN45004B
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BGD802
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES
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M3D252
BGD802
OT115J
613518/07/pp10
BGD802
DIN45004B
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Untitled
Abstract: No abstract text available
Text: DAT dbook, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J
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M3D252
BGY887
OT115J
MSA319
613518/05/pp10
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier FEATURES
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M3D248
BGD885
OT115D
R77/07/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES
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M3D252
BGD804
OT115J
MSA319
R77/03/pp11
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BGD804
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier
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M3D252
BGD804
OT115J
MSA319
R77/03/pp11
BGD804
DIN45004B
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BGX885N
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D248 BGX885N 860 MHz, 17 dB gain push-pull amplifier Product specification Supersedes data of 1997 Mar 26 2001 Nov 14 NXP Semiconductors Product specification 860 MHz, 17 dB gain push-pull amplifier FEATURES
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BGX885N
OT115D
BGX885N
R77/05/pp8
DIN45004B
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D248 BGX885N 860 MHz, 17 dB gain push-pull amplifier Product specification Supersedes data of 1997 Mar 26 2001 Nov 14 NXP Semiconductors Product specification 860 MHz, 17 dB gain push-pull amplifier FEATURES BGX885N
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BGX885N
OT115D
BGX885N
R77/05/pp8
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Untitled
Abstract: No abstract text available
Text: 1 2 3 5 7 8 9 BGY885A 860 MHz, 18.5 dB push-pull amplifier Rev. 7 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module for CATV systems operating over a frequency range of 40 MHz to 860 MHz with a supply voltage of 24 V DC .
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BGY885A
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Untitled
Abstract: No abstract text available
Text: Temic U2305B Semiconductors VHF/ UHF-TXiner-IC Description This tuner IC requires a power supply of 5 V and performs the function of three separate oscillators an mixers, SAWF-driver, L.O.-output and tri-state band switch. Features • 5 V supply voltage • Frequency range from 48 to 860 MHz
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U2305B
D-74025
10-Sep-96
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XQ1570
Abstract: tv picture tube specification
Text: A V XQ1570 NATIONAL 1" High Resolution Cam era Tube Selenium-Arsenic-Tellurium - semiconducting photolayer Se-As-Te With extended dynamic range (improved signal-to-noise ratio) Very short lag - high resolution XQ 1570 for medical TV applications, especially in
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XQ1570
131-X
tv picture tube specification
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XQ1290
Abstract: tv picture tube specification picture tube black
Text: XQ1290 NATIONAL 1" Camera Tube Antimonytrisulfide - semiconducting photolayer Sb2S3 Separate mesh connection (grid-4-electrode) High sensitivity - good resolution - wide dynamic range XQ 1290 for medical TV applications, especially in conjunction with an X-ray image intensifier
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XQ1290
335-X
333-X
tv picture tube specification
picture tube black
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1200w power amplifier circuit diagram
Abstract: YL-1057 YL1057 1200w power amplifier 1200w amplifier 1200w power supply circuit diagram YL 1057 VL1057 capacitor j u47 1 kv
Text: yL j ^ 57 YL-1057 NATIONAL Transmitting Tetrode For frequencies up to 960 MHz Type YL 1057 is a forced air-cooled, metal-ceramic tetrode with concentric electrode terminals. The tube is suitable for power amplifiers up to 2.3 kW especially for final stages of TV vision and sound transmitters as well
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YL-1057
1200w power amplifier circuit diagram
YL1057
1200w power amplifier
1200w amplifier
1200w power supply circuit diagram
YL 1057
VL1057
capacitor j u47 1 kv
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