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    AN INTRODUCTION TO BROADBAND IMPEDANCE TRANSFORMATION FOR RF POWER AMPLIFIERS Search Results

    AN INTRODUCTION TO BROADBAND IMPEDANCE TRANSFORMATION FOR RF POWER AMPLIFIERS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67S589FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver / Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / CLK input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation

    AN INTRODUCTION TO BROADBAND IMPEDANCE TRANSFORMATION FOR RF POWER AMPLIFIERS Datasheets Context Search

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    An Introduction to Broadband Impedance Transformation for RF Power Amplifiers

    Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
    Text: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T


    Original     		PDF AN-721, An Introduction to Broadband Impedance Transformation for RF Power Amplifiers transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors

    SD57045

    Abstract: AN1224
    Text: AN1224 Application note Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application Introduction LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher


    Original     		PDF AN1224 SD57045 SD57045, AN1224

    AN721

    Abstract: EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083
    Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer


    Original     		PDF AN721/D AN721 AN721 EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083

    2N6083

    Abstract: AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A
    Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer


    Original     		PDF AN721/D AN721 2N6083 AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A

    shunt reactor

    Abstract: 2n6083 an721 AN721 AN7212 AN7218 Design of H. F. Wideband Power Transformers 2N5642 2N6083 AN267 AN282A
    Text: Freescale Semiconductor Application Note AN721 Rev. 1, 10/2005 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Impedance Matching Networks Applied to RF Power Transistors By: B. Becciolini


    Original     		PDF AN721 shunt reactor 2n6083 an721 AN721 AN7212 AN7218 Design of H. F. Wideband Power Transformers 2N5642 2N6083 AN267 AN282A

    MAX2104

    Abstract: MAX2106 MAX2108 MAX2102 MAX2114 MAX2130 MAX3503 MAX3507 MAX3509 MAX3510
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: catv, digital tv, satellite tv, mlp, minimum loss pad, min loss pad, attenuator, pad, rf, impedance, loss, power measurement, voltage measurement May 01, 2002 APPLICATION NOTE 972 CATV Minimum Loss Pad for 75Ω Measurements


    Original     		PDF MAX2102: MAX2104: MAX2106: MAX2108: MAX2114: MAX2130: MAX3503: MAX3507: MAX3509: MAX3510: MAX2104 MAX2106 MAX2108 MAX2102 MAX2114 MAX2130 MAX3503 MAX3507 MAX3509 MAX3510

    motorola an721 application

    Abstract: Motorola 2N6083 MOTOROLA BOOK POWER CONVERSION Diode jx4 2N5642 2N6083 AN721 MTT-19 shunt reactor motorola an-282a application
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN721/D SEMICONDUCTOR APPLICATION NOTE AN721 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Impedance Matching Networks Applied to RF Power Transistors


    Original     		PDF AN721/D AN721 motorola an721 application Motorola 2N6083 MOTOROLA BOOK POWER CONVERSION Diode jx4 2N5642 2N6083 AN721 MTT-19 shunt reactor motorola an-282a application

    combiner THEORY

    Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
    Text: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective


    Original     		PDF WP100318 combiner THEORY amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318

    power amplifier mosfet up to 50mhz

    Abstract: APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448
    Text: APPLICATION NOTE APT 9702 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power


    Original     		PDF ARF448A/B 50MHz. 100MHz. power amplifier mosfet up to 50mhz APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448

    transistor j326

    Abstract: AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1530/D SEMICONDUCTOR APPLICATION NOTE AN1530 Motorola Advanced Amplifier Concept Package Prepared by: Alan Wood Motorola Semiconductor Products Sector Freescale Semiconductor, Inc. ABSTRACT


    Original     		PDF AN1530/D AN1530 transistor j326 AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    9702a

    Abstract: ARF448A ARF448 power amplifier mosfet up to 50mhz ARF460 ARF446 Lumped 40.68mhz ARF448 equivalent wound bifilar
    Text: APPLICATION NOTE APT 9702a A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power


    Original     		PDF 9702a ARF448A/B 50MHz. 100MHz. 9702a ARF448A ARF448 power amplifier mosfet up to 50mhz ARF460 ARF446 Lumped 40.68mhz ARF448 equivalent wound bifilar

    BLS2731-10

    Abstract: AN98029 broadband impedance transformation
    Text: APPLICATION NOTE Broadband impedance matching for S-Band Transistors AN98029 Philips Semiconductors Broadband impedance matching for S-Band Transistors CONTENTS 1 INTRODUCTION 2 DESIGN METHOD 3 IMPEDANCE MEASUREMENT 4 FITTING DATA TO MODEL 5 LUMPED ELEMENT INPUT AND OUTPUT


    Original     		PDF AN98029 SCA57 BLS2731-10 AN98029 broadband impedance transformation

    balun tc1-1-13m

    Abstract: bluetooth advantages and disadvantages RFXF6553 RFXF9503 murata ltcc filter broadband impedance transformation RF2051410 VCO 500MHz-1000MHz TC4-19 TC4-25
    Text: AN RFMD APPLICATION NOTE An RF205x Family Application Note Matching Circuits and Baluns RFMD Multi-Market Products Group RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity , PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,


    Original     		PDF RF205x balun tc1-1-13m bluetooth advantages and disadvantages RFXF6553 RFXF9503 murata ltcc filter broadband impedance transformation RF2051410 VCO 500MHz-1000MHz TC4-19 TC4-25

    bd139 equivalent transistor

    Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
    Text: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION


    Original     		PDF BLV862 AN98014 SCA57 bd139 equivalent transistor Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLAU224 – July 2007 TRF3710EVM This is the user’s guide for the TRF3710 EVM. The TRF3710 is a receiver direct downconvert quadrature demodulator that includes programmable baseband filters, adjustable dc offset correction, and buffer amplifiers to directly drive ADCs. The device is suited for operation with CDMA and WCDMA modulation


    Original     		PDF SLAU224 TRF3710EVM TRF3710

    Design Considerations for BJT Active Mixers

    Abstract: Signal mixing NE602 nokia 5300 agilent ads balun diodes 4001 8970B nokia 1662 NE602 equivalent EESof nokia fasb
    Text: Noise in Ring Topology Mixers Rick Poore Agilent EEsof EDA 1 Introduction For a classical double-balanced ring-diode mixer, it is expected that the conversion loss 4–5 dB should match the noise figure. This document explores the formal definition of noise figure and


    Original     		PDF

    bd139 equivalent

    Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
    Text: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION


    Original     		PDF BLV861 AN98033 BLV861 SCA57 bd139 equivalent BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 linear handbook MGM734 860mhz rf amplifier circuit diagram

    MSA-0520

    Abstract: MSA-1023 UT85 COAXIAL CABLE UT85 coax MSA0520 S007 UT141 UT85 2 watt carbon resistor avago mmic frequency divider
    Text: Using the MSA-0520 and MSA-1023 Medium-Power MODAMP Silicon MMIC Amplifiers Application Note S007 Introduction This application note describes the use of mediumpower MODAMP silicon MMIC amplifiers at frequencies up to 3 GHz. Single-ended, in-phase parallel and pushpull designs are discussed using models MSA-0520 and


    Original     		PDF MSA-0520 MSA-1023 MSA-1023. MSA-0520 MSA-1023 5091-8822E UT85 COAXIAL CABLE UT85 coax MSA0520 S007 UT141 UT85 2 watt carbon resistor avago mmic frequency divider

    MSA-0520

    Abstract: MSA 932 UT141 50ohm UT85 coaxial
    Text: Using the MSA-0520 and MSA-1023 Medium-Power MODAMP Silicon MMIC Amplifiers Application Note S007 Introduction This application note describes the use of medium-power MODAMP silicon MMIC amplifiers at frequencies up to 3 GHz. Single-ended, inphase parallel and push-pull designs are discussed using models


    Original     		PDF MSA-0520 MSA-1023 MSA-1023. 5091-8822E 5967-5923E MSA 932 UT141 50ohm UT85 coaxial

    BROADBAND TRANSFORMERS AND POWER

    Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
    Text: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of


    Original     		PDF AN878/D AN878 BROADBAND TRANSFORMERS AND POWER erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403

    Stackpole 57-9322-11

    Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
    Text: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB


    Original     		PDF AN593/D AN593 Stackpole 57-9322-11 EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367

    mosfet class d

    Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
    Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less


    Original     		PDF AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier

    SAWTEK 855898

    Abstract: VCO190-1960T double down conversion receiver AD8370 control software AN-851 ADF4360-8 AD9246 AD8344 AD8370 ADF4153
    Text: AN-851 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com A WiMax Double Downconversion IF Sampling Receiver Design by Eric Newman and Cecile Masse INTRODUCTION


    Original     		PDF AN-851 64-QAM AN06147-0-6/06 SAWTEK 855898 VCO190-1960T double down conversion receiver AD8370 control software AN-851 ADF4360-8 AD9246 AD8344 AD8370 ADF4153