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    AMPLIFIER TRANSISTOR NPN 40V 100MA Search Results

    AMPLIFIER TRANSISTOR NPN 40V 100MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    AMPLIFIER TRANSISTOR NPN 40V 100MA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3904L

    Abstract: 2n3904 npn 2N3904G 2N3904 transistor free
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =625mW * Complementary to 2N3906 „ ORDERING INFORMATION Ordering Number Lead Free


    Original     		2N3904 625mW 2N3906 2N3904L-T92-B 2N3904L-T92-K 2N3904L-T92-R 2N3904G-T92-B 2N3904G-T92-K 2N3904G-T92-R QW-R201-027, 2N3904L 2n3904 npn 2N3904G 2N3904 transistor free PDF

    2N3904L

    Abstract: TRANSISTOR 2N3904
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =625mW * Complementary to 2N3906 *Pb-free plating product number: 2N3904L „ ORDERING INFORMATION


    Original     		2N3904 625mW 2N3906 2N3904L 2N3904-T92-C-B 2N3904L-T92-C-B 2N3904-T92-C-K 2N3904L-T92-C-K QW-R201-027 2N3904L TRANSISTOR 2N3904 PDF

    C2N3904

    Abstract: 2N3904 NPN Transistor 2N3904G 2N3904 transistor data sheet free download 2n3904 npn 2N3904 transistor 2N3904 2n3904 transistor 2n3904 equivalent 2N3906 NPN Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =625mW * Complementary to 2N3906 Lead-free: 2N3904L Halogen-free:2N3904G „ ORDERING INFORMATION


    Original     		2N3904 625mW 2N3906 2N3904L 2N3904G 2N3904-T92-B 2N3904-T92-K 2N3904L-T92-B 2N3904L-T92-K 2N3904G-T92-B C2N3904 2N3904 NPN Transistor 2N3904G 2N3904 transistor data sheet free download 2n3904 npn 2N3904 transistor 2N3904 2n3904 transistor 2n3904 equivalent 2N3906 NPN Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to 2N3906  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N3904L-AB3-R 2N3904G-AB3-R


    Original     		2N3904 2N3906 2N3904L-AB3-R 2N3904G-AB3-R 2N3904L-T92-B 2N3904G-T92-B 2N3904L-T92-K 2N3904G-T92-K OT-89 PDF

    2N3904L

    Abstract: 2n3904 npn hFE-200 to-92 npn 2N3904L-T92-B 2N3904 2N3904-T92-B 2N3904-T92-K 2N3906
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =625mW * Complementary to 2N3906 1 TO-92 *Pb-free plating product number: 2N3904L ORDERING INFORMATION


    Original     		2N3904 625mW 2N3906 2N3904L 2N3904-T92-B 2N3904L-T92-B 2N3904-T92-K 2N3904L-T92-K QW-R201-027 2N3904L 2n3904 npn hFE-200 to-92 npn 2N3904L-T92-B 2N3904 2N3904-T92-B 2N3904-T92-K 2N3906 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to 2N3906  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N3904G-AB3-R 2N3904L-T92-B


    Original     		2N3904 2N3906 2N3904G-AB3-R 2N3904L-T92-B 2N3904G-T92-B 2N3904L-T92-K 2N3904G-T92-K OT-89 QW-R201-027 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4237 • VCBO=50V Min , VCEO=40V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		2N4237 34mW/Â O-205AD) PDF

    2N4237

    Abstract: LE17
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4237 • VCBO=50V Min , VCEO=40V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		2N4237 O-205AD) 2N4237 LE17 PDF

    transistor itt 973

    Abstract: No abstract text available
    Text: , L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC943 NPN h 7 V $/ /NPN SILICON EPITAXIAL TRANSISTOR Frequency Amplifier Use ft ^/FEATURES WB0/PACKAGE DIMENSIONS (Unittmm) •MtEtr-fo V C E O :40V, V E Bo'-8.0V


    Original     		2SC943 transistor itt 973 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S E M I C O ND U C T O R INC 14E MPS6602 D | 7*^4140 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR “ " r T-29-21 AMPLIFIER TRANSISTOR • C ollector-Em itter Voltage: Vcso=40V • C ollector Dissipation: Pc max =825mW ABSOLUTE MAXIMUM RATINGS (T, =25°C)


    OCR Scan     		G007333 MPS6602 825mW T-29-21 MPS6601 PDF

    schematic diagram ac voltage regulator

    Abstract: 2N3904 TRANSISTOR using darlington amplifier 2N2102 transistor schematic diagram line ac voltage regulator ac voltage regulator using SCR circuit diagram CA3085 CA3085 diagram TRANSISTOR SUBSTITUTION DATA BOOK schematic diagram 12v ac regulator scr firing circuit ac regulator
    Text: Harris Semiconductor No. AN6157.1 Harris Intelligent Power April 1994 APPLICATIONS OF THE CA3085 SERIES MONOLITHIC IC VOLTAGE REGULATORS Authors: A.C.N. Sheng and L.R. Avery The Harris CA3085, CA3085A, and CA3085B monolithic IC’s are positive-voltage regulators capable of providing output currents up to 100mA over the temperature range from 55oC to +125oC. They are supplied in 8 lead TO-5 type packages. The following tabulation shows some key characteristics and salient differences between devices in the CA3085


    Original     		AN6157 CA3085 CA3085, CA3085A, CA3085B 100mA 125oC. CA3085 CA3085A accord100mA. schematic diagram ac voltage regulator 2N3904 TRANSISTOR using darlington amplifier 2N2102 transistor schematic diagram line ac voltage regulator ac voltage regulator using SCR circuit diagram CA3085 diagram TRANSISTOR SUBSTITUTION DATA BOOK schematic diagram 12v ac regulator scr firing circuit ac regulator PDF

    CA3085 diagram

    Abstract: CA3085 triac specifications CA3059 equivalent 2N2102 transistor schematic diagram 12v ac regulator AN6157 Stancor TP3 transformer ca3085a in4001 rectifier diode
    Text: Semiconductor No. AN6157.1 Harris Intelligent Power April 1994 APPLICATIONS OF THE CA3085 SERIES MONOLITHIC IC VOLTAGE REGULATORS Authors: A.C.N. Sheng and L.R. Avery The Harris CA3085, CA3085A, and CA3085B monolithic IC’s are positive-voltage regulators capable of providing output currents up to 100mA over the temperature range from 55oC to +125oC. They are supplied in 8 lead TO-5 type packages. The following tabulation shows some key characteristics and salient differences between devices in the CA3085


    Original     		AN6157 CA3085 CA3085, CA3085A, CA3085B 100mA 125oC. CA3085 CA3085A wi100mA. CA3085 diagram triac specifications CA3059 equivalent 2N2102 transistor schematic diagram 12v ac regulator Stancor TP3 transformer ca3085a in4001 rectifier diode PDF

    ca3096

    Abstract: CA3096AE
    Text: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C CA3096. ca3096 CA3096AE PDF

    ca3096

    Abstract: thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays
    Text: CA3096, CA3096A, CA3096C H A R R IS S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096A. CA3096C ca3096 thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays PDF

    NTE346

    Abstract: npn 1W 40V to39
    Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver


    Original     		NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW, npn 1W 40V to39 PDF

    transistor Ic 1A datasheet NPN

    Abstract: 2N4910
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4910 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 40V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation


    Original     		2N4910 500mA 100kHz transistor Ic 1A datasheet NPN 2N4910 PDF

    SSM2012

    Abstract: Audio Output Transistor Amplifier pdf/SSM2212
    Text: Preliminary Technical Data FEATURES Audio Dual Matched NPN Transistor SSM2212 PIN CONFIGURATIONS Very Low Voltage Noise: 1nV/√Hz max @ 100Hz Excellent Current Gain Match: 0.5% Low offset voltage VOS : 200 V max Outstanding Offset Voltage Drift: 0.03μV/ºC


    Original     		SSM2212 100Hz 200MHz SSM2212 SSM2012 Audio Output Transistor Amplifier pdf/SSM2212 PDF

    MPSA10

    Abstract: MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14
    Text: SAMS UN G SEMICONDUCTOR INC MPSA10 14E 0 | 7«lb4iq2 00073Mb S | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		000734b MPSA10 T-29-21 625mW 100/iA, lc-10mA, lc-100mA, MPSA25 MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14 PDF

    opr12

    Abstract: opr 12 Mosfet J49 9mfp 7291P TA8425H 8212F 7774P TA7363AP 24 dip "transistor array"
    Text: 1. FUNCTION INDEX General Information E quipm ent Model Package Max. rating Functions Page TC9142P DIP 16 - 8-bit D/A conversion-type F /V P/V converter incorporated, no adjustm ent required 527 TC9192P/F DIP 18 /F L P 2 0 - Double PLL controller incorporating 8-bit D/A


    OCR Scan     		TC9142P SQP20P-300 TC9142P, TC9192P/F TC9203P/F TC5081AP TA7715P TA7712P/F TD62318AP 62803P opr12 opr 12 Mosfet J49 9mfp 7291P TA8425H 8212F 7774P TA7363AP 24 dip "transistor array" PDF

    MMBTA06G

    Abstract: MMBTA06L-AE3-R MMBTA06 MMBTA06-AE3-R MMBTA06L transistor marking CS
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW Lead-free: MMBTA06L Halogen-free:MMBTA06G „ ORDERING INFORMATION Normal MMBTA06-AE3-R „


    Original     		MMBTA06 350mW MMBTA06L MMBTA06G MMBTA06-AE3-R MMBTA06L-AE3-R MMBTA06G-AE3-R OT-23 QW-R206-041 MMBTA06G MMBTA06 MMBTA06-AE3-R MMBTA06L transistor marking CS PDF

    MMBTA05

    Abstract: MMBTA06 MMBTA06-AE3-R MMBTA06L MMBTA06L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA06L ORDERING INFORMATION Order Number Normal


    Original     		MMBTA06 350mW OT-23 MMBTA06L MMBTA06-AE3-R MMBTA06L-AE3-R QW-R206-041 MMBTA05 MMBTA06 MMBTA06-AE3-R MMBTA06L MMBTA06L-AE3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES  3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 2 1 SOT-23 JEDEC TO-236  ORDERING INFORMATION Ordering Number Note:  MMBTA06G-AE3-R


    Original     		MMBTA06 350mW OT-23 O-236) MMBTA06G-AE3-R QW-R206-041 PDF

    POWER TRANSISTORS 10A 400v pnp

    Abstract: full wave bridge rectifier ic FULL WAVE mosfet RECTIFIER CIRCUITS schottky 400v CMLDM7003 CMLM8205 P-Channel mosfet 400v CTLS5064-M532 CBRHDSH2-100 Schottky Diode 40V 5A bridge
    Text: Latest Products Multi Discrete Module CMLM8205 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode Features: Benefits: Applications: MOSFET • rDS on (3.0Ω) • VGS(th) (1.0V) • Space saving, multi-discrete device The CMLM8205 is a Multi Discrete Module consisting of a single


    Original     		CMLM8205 280mA, 500mA CMLM8205 OT-563 100mA) com/info/CMLM8205 com/product/CMLM8205 CET3906E 200mA POWER TRANSISTORS 10A 400v pnp full wave bridge rectifier ic FULL WAVE mosfet RECTIFIER CIRCUITS schottky 400v CMLDM7003 P-Channel mosfet 400v CTLS5064-M532 CBRHDSH2-100 Schottky Diode 40V 5A bridge PDF

    dpak code

    Abstract: marking JC diode Vbe 40 transistor CJD200 data base dpak NPN Silicon Power Transistor DPAK Resistance 1/4W CJD210 10V transistor npn 20a
    Text: CJD200 NPN CJD210 PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier


    Original     		CJD200 CJD210 CJD200, 500mA 100mA, 10MHz CJD200) CJD210) 26-August dpak code marking JC diode Vbe 40 transistor data base dpak NPN Silicon Power Transistor DPAK Resistance 1/4W 10V transistor npn 20a PDF