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    AMPLIFIER TRANSISTOR 14 GHZ Search Results

    AMPLIFIER TRANSISTOR 14 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    AMPLIFIER TRANSISTOR 14 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4 npn transistor ic 14pin

    Abstract: 8 npn transistor ic 14pin C10535E UPA102G
    Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package


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    PA102 PA102B: 14-pin PA102G: PA102 4 npn transistor ic 14pin 8 npn transistor ic 14pin C10535E UPA102G PDF

    SCA-14

    Abstract: 175C NGA-589 sca14
    Text: Preliminary Preliminary SCA-14 Product Description Sirenza Microdevices’ SCA-14 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage


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    SCA-14 SCA-14 EDS-101395 175C NGA-589 sca14 PDF

    jrc 78L08

    Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
    Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN


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    AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08 PDF

    2SC2351

    Abstract: marking R2
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. @ f = 1.0 GHz • MAG 14 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS Units: mm +0.1 0.4 −0.05 2.8±0.2 +0.1 1.5


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    2SC2351 2SC2351 marking R2 PDF

    MSC85623

    Abstract: No abstract text available
    Text: MSC85623 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC85623 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz. PACKAGE 230 2L FLG MAXIMUM RATINGS IC 150 mA VCEO 14 V VCB


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    MSC85623 MSC85623 PDF

    175C

    Abstract: NGA-589 SCA-14 SCA-4
    Text: Product Description Stanford Microdevices’ SCA-14 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage


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    SCA-14 SCA-14 NGA-589 EDS-101395 175C SCA-4 PDF

    2SC4536

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SC5337 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise


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    2SC5337 2SC4536 R09DS0047EJ0300 2SC5337 2SC5337-T1 2SC5337-AZ 2SC5337-T1-AZ PDF

    1800 ldmos

    Abstract: electrolytic capacitor 470 P-237 MAPLST1820-030CF component of 30w amplifier
    Text: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 MAPLST1820-030CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier


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    MAPLST1820-030CF 1805-1880MHz 1930-1990MHz 1900MHz) P-237 1800 ldmos electrolytic capacitor 470 P-237 MAPLST1820-030CF component of 30w amplifier PDF

    transistor marking M04 GHZ

    Abstract: No abstract text available
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


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    NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2B PG10586EJ02V0DS transistor marking M04 GHZ PDF

    transistor marking v79 ghz

    Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


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    NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transistor marking v79 ghz NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2 PDF

    transistor s2p

    Abstract: 2SC4536 2SB804-AUT1-AZ
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5337 Data Sheet NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA


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    2SC5337 R09DS0047EJ0300 2SC4536 2SC5337 2SC5337-T1 2SC5337-AZ 2SC5337-T1-AZ transistor s2p 2SB804-AUT1-AZ PDF

    NE3508M04-T2-A

    Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


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    NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508 PDF

    NEC Ga FET marking L

    Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


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    NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2B NE3508M04-T2B-A NEC Ga FET marking L NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IO Stanford Microdevices Product Description SCA-14 Stanford M icrodevices’ SCA-14 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


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    SCA-14 SCA-14 100mA 36dBm. 100mW PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


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    UPA102G UPA102G OUTUNEG14 UPA102G-E1 2500/REEL PDF

    78s12

    Abstract: No abstract text available
    Text: S tati ford M i cru d ev ices Product Description SCA-14 Stanford M icrodevices’ SC A -14 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases


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    36dBm. 100mW 78s12 PDF

    Transistor Array differential amplifier

    Abstract: transistor array high speed G141C UPA102G
    Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hre LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceramic package


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    UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B UPA102B/G Transistor Array differential amplifier transistor array high speed G141C UPA102G PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF • MAG 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS 14 dB TYP. @ f = 1.0 GHz U nits: m m 2 .8 ± 0.2 1.5 "3- Ò ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)


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    2SC2351 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • NF 1.5 dB TY P. ' f = 1 .0 G H z M AG 14 dB TV P. • f = 1.0 GHz in millimeters ABSOLUTE M AXIM UM RATINGS { T ,« 2 5 ° C


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    2SC2351 PDF

    UPA102G

    Abstract: transistor PACKAGE PIN DIAGRAM
    Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM • TW O BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE LINEARITY • TW O PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceram ic package


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    UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B UPA102B/G UPA102G transistor PACKAGE PIN DIAGRAM PDF

    SCA-14

    Abstract: sca14
    Text: E j Stanford Microdevices Product Description IS C A -1 4 Stanford M icrodevices’ SCA-14 is a high perform ance Galliur Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


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    SCA-14 100mA 36dBm. 100mW sca14 PDF

    nec transistor

    Abstract: No abstract text available
    Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


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    UPA102G UPA102G hM27S25 UPA102G-E1 2500/REEL nec transistor PDF

    PR240

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f = 1.0 G H z * M AG 14 dB TYP. f = 1.0 G H z PACKAGE DIMENSIONS Units: mm 2 .8± 0.2 1.5 .0.65-0-5 ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)


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    2SC2351 PR240 PDF

    HN3C14F

    Abstract: No abstract text available
    Text: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING


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    HN3C14F HN3C14F PDF