4CW100,000D
Abstract: 4CW100000D operation of class c amplifier 000D microwave tubes
Text: The 4CW100,000D is recommended for use as a Class C RF amplifier or oscillator, a Class AB RF linear amplifier, or a Class AB push-pull AF amplifier or modulator. The 4CW100,000D is also useful as a plate and screen modulated Class RF amplifier, and in pulse modulator-regulator service.
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4CW100
4CW50
4CW100,000D
4CW100000D
operation of class c amplifier
000D
microwave tubes
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4CW100,000E
Abstract: SK-2011a operation of class c amplifier
Text: The 4CW100,000E is ideal for use as a Class C RF amplifier or oscillator, a Class AB RF linear amplifier, or a Class AB push-pull AF amplifier or modulator as well as a plate and screen-modulated Class C RF amplifier. In a pulse modulator service, it can deliver a peak output of 4 megawatts. The tube is
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4CW100
4CW50
4CW100,000E
SK-2011a
operation of class c amplifier
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4CV100,000E
Abstract: RF Amplifier operation of class c amplifier high power 500 watts audio amplifier 4CV100 710b SK-2011a "RF Amplifier" 500 watts audio amplifier
Text: The 4CV100,000E is recommended for use as a Class C RF amplifier, a class AB RF amplifier, a Class AB push-pull audio amplifier or modulator, as well as a high level modulated or pulse duration modulated amplifier. The tube is characterized by low input and feedback capacitances and
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4CV100
4CW50
4CV100,000E
RF Amplifier
operation of class c amplifier
high power 500 watts audio amplifier
710b
SK-2011a
"RF Amplifier"
500 watts audio amplifier
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8351
Abstract: 4CV100,000C 4CV100000 "RF Amplifier" RF Amplifier 500 watts rf power amplifier 4CV100 af amplifier 4CV1
Text: The 4CV100,00C/8351 is recommended for use as a Class C RF amplifier or oscillator, a Class AB, push-pull AF amplifier or modulator. The 4CV100,000/8351 is also useful as a plate and screen modulated Class C RF amplifier. Class of Operation Characteristics
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4CV100
00C/8351
00AB1
4CW50
000C/8351
8351
4CV100,000C
4CV100000
"RF Amplifier"
RF Amplifier
500 watts rf power amplifier
af amplifier
4CV1
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8349
Abstract: 4CX35,000C 4cx35000 4CX35 4CX35000c "RF Amplifier" 8823
Text: The 4CX35,000/8349 is intended for use at the 50 to 150 kW output power level. It is recommended for use as a Class C RF amplifier or oscillator, a Class AB RF linear amplifier, or a Class AB pushpull AM amplifier or modulator Class of Operation Characteristics
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4CX35
35AB1
000C/
000C/8349
8349
4CX35,000C
4cx35000
4CX35000c
"RF Amplifier"
8823
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3cx1500a7
Abstract: 8877 tube 3cx1500 Eimac 3cx1500a7 3cx1500*a7 8877 3cx1500a filament Eimac 3cx1500a7 amplifier RF CLASS B SK-2210
Text: The 3CX1500A7/8877 power triode is designed for use as a cathode driven Class AB2 or Class B amplifier, in audio or RF applications including the VHF band or as a cathode driven plate modulator Class C RF amplifier. As a linear amplifier, high power gain may be obtained without sacrifice of
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3CX1500A7/8877
3cX1500A7/
4CW50
3CX1500A7/8877
3cx1500a7
8877 tube
3cx1500
Eimac 3cx1500a7
3cx1500*a7
8877
3cx1500a
filament Eimac 3cx1500a7
amplifier RF CLASS B
SK-2210
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4CW150,000E
Abstract: 4CW150 SK-2011a
Text: The 4CW150,000E is intended for use as a Class C RF amplifier or oscillator, a Class AB push-pull AF amplifier or modulator as well as a plate and screen-modulated Class C RF amplifier. In pulse modulator service, it can deliver a peak output of 4 megawatts. The tube is characterized by low input
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4CW150
4CW50
4CW150,000E
SK-2011a
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power transistor audio amplifier 500 watts
Abstract: 4CV100000 Eimac amplifier 200 watt audio amplifier 4CV100 710b high power 500 watts audio amplifier push pull class AB RF linear RF push pull power amplifier
Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CV100,000E The Eimac 4CV100,000E is recommended for use as a Class C RF amplifier, a class AB RF amplifier, a Class AB push-pull audio amplifier or modulator, as well as a high level modulated or pulse duration modulated amplifier.
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4CV100
ttings\carolyn\Desktop\Objects\4cv100000e
power transistor audio amplifier 500 watts
4CV100000
Eimac
amplifier
200 watt audio amplifier
710b
high power 500 watts audio amplifier
push pull class AB RF linear
RF push pull power amplifier
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RF106-12
Abstract: No abstract text available
Text: RF106 900 MHz ISM Band Power Amplifier Data Sheet 100981B August 2002 ii Conexant 100981B 08/26/02 RF106 900 MHz ISM Band Power Amplifier The RF106 is a three-stage class AB-type RF power amplifier for 900 MHz Industrial, Distinguishing Features Scientific, and Medical ISM band applications. It delivers output power proportional ! Class AB-type RF power amplifier
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RF106
100981B
RF106
RF106-12
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ATV6060 The RF Line Broadband Linear Power Am plifier 60 W, 470-860 MHz CLASS A RF POWER AMPLIFIER The ATV6060 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This am plifier incorporates microstrip technology and
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ATV6060
ATV6060
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4cx35000
Abstract: 4cx3500 4cx350 push pull class AB RF linear 4CX35000c AM MODULATOR 4CX35 Eimac application note 4
Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CX35,000C/8349 The Eimac 4CX35,000/8349 is intended for use at the 50 to 150 kW output power level. It is recommended for use as a Class C RF amplifier or oscillator, a Class AB RF linear amplifier, or a Class
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4CX35
000C/8349
gs\carolyn\Desktop\Objects\4cx35000c-8349
4cx35000
4cx3500
4cx350
push pull class AB RF linear
4CX35000c
AM MODULATOR
Eimac application note 4
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MRFA2604
Abstract: data sw 3205 transistor cq 529 class c tuned amplifier
Text: MOTOROLA O rder this docum ent by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA MRFA2604 The RF Line Broadband R.F. Array for T V TVansmitter 230 W PEAK SYNC. 4 7 0 -8 6 0 MHz CLASS AB RF POWER AMPLIFIER The MRFA2604 is a solid state class AB amplifier specifically designed for TV
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MRFA2604/D
MRFA2604
MRFA2604
FA2604
2PHX3437
data sw 3205
transistor cq 529
class c tuned amplifier
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siceront kf
Abstract: transistor motorola 351 motorola rf Power Transistor IrL 1540 N 1307 TRANSISTOR equivalent siceront kf 1201 429C MRFA2602 amplifier application circuit motorola 100 w amplifier
Text: MOTOROLA Order this document by MRFA2602/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2602 Broadband RF Power Amplifier for TV Transmitter The MRFA2602 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip
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MRFA2602/D
MRFA2602
MRFA2602
MRFA2602/D*
siceront kf
transistor motorola 351
motorola rf Power Transistor
IrL 1540 N
1307 TRANSISTOR equivalent
siceront kf 1201
429C
amplifier application circuit
motorola 100 w amplifier
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POT1 10T R1K
Abstract: AC00 DS1870 DS1870E-010 J-STD-020A pin diagram of bf 494 transistor
Text: Rev 1; 5/04 LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s
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DS1870
256-position
DS1870s.
POT1 10T R1K
AC00
DS1870E-010
J-STD-020A
pin diagram of bf 494 transistor
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4CX1000A
Abstract: SK-800B tetrode 4cx1000a 1000 WATTS AMPLIFIER 4cx 1000a SK806 8168 SK-806
Text: The 4CX1000A/8168 is a low voltage, high current tetrode specifically designed for Class AB1 RF linear amplifier or audio amplifier applications where its high gain and low distortion characteristics may be used to advantage. Class of Operation Characteristics
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4CX1000A/8168
CX1000A/
4CX1000A/8168
4CX1000A
SK-800B
tetrode 4cx1000a
1000 WATTS AMPLIFIER
4cx 1000a
SK806
8168
SK-806
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429C
Abstract: MRFA2602 TRANSISTOR C 3205 tv transmitter amplifier circuit
Text: MOTOROLA Order this document by MRFA2602/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2602 Broadband RF Power Amplifier for TV Transmitter The MRFA2602 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip
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MRFA2602/D
MRFA2602
MRFA2602
MRFA2602/D*
429C
TRANSISTOR C 3205
tv transmitter amplifier circuit
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF240 . . . designed for 13.6 volt VHF large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
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MRF240/D
MRF240
MRF240
40-JZi
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MRF240
Abstract: VK200 inductor of high frequencies choke vk200 VK200 4B inductor inductor vk200 VK200 INDUCTOR 2204B VK200 allen bradley 150
Text: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
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MRF240/D
MRF240
MRF240/D*
MRF240
VK200 inductor of high frequencies
choke vk200
VK200 4B inductor
inductor vk200
VK200 INDUCTOR
2204B
VK200
allen bradley 150
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T6s MARKING
Abstract: No abstract text available
Text: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.
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PG2253T6S
PG2253T6S
16-pin
PG10761EJ01V0DS
T6s MARKING
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Untitled
Abstract: No abstract text available
Text: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.
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PG2253T6S
PG2253T6S
16-pin
PG10761EJ01V0DS
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AM020331SF-2D
Abstract: mhz rf amplifier module class a power amplifier
Text: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier
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AM020331SF-2D
AM020331SF-2D
mhz rf amplifier module
class a power amplifier
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mhpa21010
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHPA21010/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. UMTS Band RF Linear LDMOS Amplifier MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in
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MHPA21010/D
MHPA21010
mhpa21010
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4CV250
Abstract: class A push pull power amplifier 4CV250000 push pull class AB RF linear LB 124 transistor operation of class c amplifier 4600 c
Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CV250,000B The Eimac 4CV250,000B is recommended for use as a Class C RF amplifier or oscillator, a Class AB linear amplifier, or a Class AB push-pull AF amplifier or modulator. The 4CV250,000B is also useful as a
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4CV250
ttings\carolyn\Desktop\Objects\4cv250000b
class A push pull power amplifier
4CV250000
push pull class AB RF linear
LB 124 transistor
operation of class c amplifier
4600 c
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MHPA18010
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHPA18010/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. CDMA Band RF Linear LDMOS Amplifier MHPA18010 Designed for Class AB amplifier applications in 50 ohm systems operating in
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MHPA18010/D
MHPA18010
MHPA18010
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