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    AMPLIFIER RF 18DBM GAIN 18DB Search Results

    AMPLIFIER RF 18DBM GAIN 18DB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    AMPLIFIER RF 18DBM GAIN 18DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LMA208C

    Abstract: No abstract text available
    Text: 2-26 GHz PHEMT Amplifier Filtronic LMA208C Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”


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    PDF LMA208C 18dBm 2-26GHz 986mmX1 082mm LMA208C 26GHz. 19dBm. t80/20

    Untitled

    Abstract: No abstract text available
    Text: New Product Announcement! RF Instrument Amplifier 50Ω TVA-63-183 6 to 18 GHz The Big Deal • Wide Bandwidth, 6 to 18 GHz Instrument Amplifier Gain 24dB • Output Power, 18dBm • Isolation, 25 dB • Self Contained Power Supply with selectable 110 or 220 volts AC supply


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    PDF TVA-63-183 18dBm AP1601 TVA-63-183

    IPC-SM-782

    Abstract: RF2314 RF2314PCBA-41X
    Text: RF2314 GENERAL PURPOSE LOW NOISE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT 5-Lead Features „ „ „ „ „ „ 150MHz to 2500MHz Operation 2.7V to 6.0V Single Supply +18dBm Output IP3 at 5V GND 1 5 RF OUT GND 2 14dB Gain at 900MHz 8.6dB Gain at 1900MHz


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    PDF RF2314 150MHz 2500MHz 18dBm 900MHz 1900MHz RF2314 2002/95/EC DS070730 IPC-SM-782 RF2314PCBA-41X

    Untitled

    Abstract: No abstract text available
    Text: RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features        VC1 RF IN 1 Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input Matched to 50 2400MHz to 2500MHz Frequency Range +18dBm at <2.5% typ EVM, 120mA at 3.3VCC


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    PDF RF5722 2400MHz 2500MHz 18dBm 120mA IEEE802 11b/g/n DS110619

    Frequency

    Abstract: RLNA17G26GA
    Text: RF-LAMBDA RLNA17G26GA The power beyond expectations Wide Band Low Noise Amplifier 17.7GHz~26GHz • • • • • • Gain: 25 dB Typical Noise Figure: 3.0dB Typical P1dB Output Power: +18dBm Typical Supply Voltage: +15V @160mA 50 Ohm Matched Input / Output


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    PDF RLNA17G26GA 26GHz 18dBm 160mA Frequency RLNA17G26GA

    RF 4*4 mm QFN power amplifier ISM 900 MHz

    Abstract: transistor 2.4GHz amplifier schematic wifi SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR metal detector circuit with pcb
    Text: RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features        VC1 RF IN 1 Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input Matched to 50 2400MHz to 2500MHz Frequency Range +18dBm at <2.5% typ EVM, 120mA at 3.3VCC


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    PDF RF5722 IEEE802 11b/g/n RF5722 DS110619 RF 4*4 mm QFN power amplifier ISM 900 MHz transistor 2.4GHz amplifier schematic wifi SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR metal detector circuit with pcb

    18dBm

    Abstract: LX5503E LX5503E-LQ LX5503E-LQT
    Text: LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For +18dBm OFDM output power 64QAM, 54Mbps , the PA provides a very low EVM (Error-Vector Magnitude) of 3.5%, and consumes less


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    PDF LX5503E 18dBm 64QAM, 54Mbps) 150mA LX5503E 16-pin LX5503E-LQ LX5503E-LQT

    AP2085

    Abstract: MO-220 marking 535 RF 5 GHz Power Amplifier
    Text: AP2085 5 GHz Power Amplifier 2004.08.06 Preliminary AP2085 is a linear, three-stage power amplifier MMIC in the 5GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers ~18dBm linear output power for EVM<3%, and 30dB gain under


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    PDF AP2085 AP2085 18dBm 54Mbps IEEE802 20dBm 85GHz) 85GHz MO-220 marking 535 RF 5 GHz Power Amplifier

    LX5506

    Abstract: LX5506-LQ LX5506-LQT
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506-LQ LX5506-LQT

    LX5506

    Abstract: LX5506LQ LX5506LQ-TR
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506LQ LX5506LQ-TR

    LX5506

    Abstract: LX5506-LQ LX5506-LQT
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506-LQ LX5506-LQT

    LX5503E

    Abstract: LX5503E-LQ LX5503E-LQT
    Text: LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +18dBm OFDM output power 64QAM, 54Mbps , the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA


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    PDF LX5503E 18dBm 64QAM, 54Mbps) 150mA LX5503E 16pin 85GHz LX5503E-LQ LX5503E-LQT

    Untitled

    Abstract: No abstract text available
    Text: LX5503E I N T E G R A T E D P R O D U C T S InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +18dBm OFDM output power 64QAM, 54Mbps , the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA


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    PDF LX5503E 18dBm 64QAM, 54Mbps) 150mA LX5503E 16pin 85GHz

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    Untitled

    Abstract: No abstract text available
    Text: AP2010C RFIC Technology Corporation 2.4&5GHz Dual Band Power Amplifier www.rfintc.com 2006.12.01 Update AP2010C is a DUAL BAND power amplifier in 2.4GHz and 5GHz band utilizing InGaP/GaAs HBT process. • 802.11g 2.4GHz : - Current: 60mA for 11g linear power(18dBm)


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    PDF AP2010C AP2010C 18dBm) 18dBm 85GHz) 190mA 190mA, 18dBm

    LX5506

    Abstract: LX5506LQ LX5506LQ-TR
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506LQ LX5506LQ-TR

    54Mbps

    Abstract: MICROSEMI LQ RoHS capacitor 2D LX5503E LX5503ELQ LX5503ELQ-TR
    Text: LX5503E TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +18dBm OFDM output power 64QAM, 54Mbps , the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA total DC current. The LX5503E is available in a 16pin 3x3mm2 micro-lead package


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    PDF LX5503E 18dBm 64QAM, 54Mbps) 150mA LX5503E 16pin 85GHz 54Mbps MICROSEMI LQ RoHS capacitor 2D LX5503ELQ LX5503ELQ-TR

    Untitled

    Abstract: No abstract text available
    Text: LX5503E TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET For +18dBm OFDM output power 64QAM, 54Mbps , the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA total DC current. The LX5503E is available in a 16pin 3x3mm2 micro-lead package


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    PDF LX5503E 18dBm 64QAM, 54Mbps) 150mA LX5503E 16pin 85GHz

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    LX5506LQ-TR

    Abstract: LX5506 LX5506LQ
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506LQ-TR LX5506LQ

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 18dBm 64QAM/ 54Mbps 26dBm 25GHz 100mA 85GHz 190mA

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total DC current. At higher supply voltage


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    PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


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    PDF LX5506 18dBm 64QAM/ 54Mbps 26dBm 25GHz 100mA 85GHz 190mA

    LX5503E

    Abstract: LX5503ELQ LX5503ELQ-TR
    Text: LX5503E I N T E G R A T E D P R O D U C T S InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +18dBm OFDM output power 64QAM, 54Mbps , the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA


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    PDF LX5503E 18dBm 64QAM, 54Mbps) 150mA LX5503E 16pin 85GHz LX5503ELQ LX5503ELQ-TR