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    AMPLIFIER RESEARCH RF POWER AMPLIFIER SCHEMATIC Search Results

    AMPLIFIER RESEARCH RF POWER AMPLIFIER SCHEMATIC Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    AMPLIFIER RESEARCH RF POWER AMPLIFIER SCHEMATIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    URV5-Z2

    Abstract: narda directional coupler 25A250A Amplifier Research power amplifier schematic nrvd Rohde and Schwarz smt02 "Amplifier Research" Amplifier Research dc3010 34903A
    Text: AND8410/D EMC Conducted Susceptibility, IEC 62132-4, Direct Power Injection http://onsemi.com APPLICATION NOTE Introduction The EMC conducted immunity can be significantly improved by terminating the LIN bus with a capacitor to ground. On one hand it will load the bus so the maximum


    Original     		PDF AND8410/D URV5-Z2 narda directional coupler 25A250A Amplifier Research power amplifier schematic nrvd Rohde and Schwarz smt02 "Amplifier Research" Amplifier Research dc3010 34903A

    4G base station power amplifier

    Abstract: ulm 2003 Amplifier Research rf power amplifier schematic Conference Paper Reprint watkins-johnson am plifier CF24 GaN Bias 25 watt nokia rf power amplifier transistor research paper for differentiation broad-band Microwave Class-C Transistor Amplifiers
    Text: 3196 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 57, NO. 12, DECEMBER 2009 A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA Peter Wright, Jonathan Lees, Johannes Benedikt, Paul J. Tasker, Senior Member, IEEE, and Steve C. Cripps


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    atmel Reflow soldering

    Abstract: AT86RF212 PCB xmega device board SiFLEX02HP J-STD-020 atmel 906 XMEGA Application Notes SiFLEX02-HP ATXMEGA256A3
    Text: SiFLEX02-HP TRANSCEIVER MODULE DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available FEATURES DESCRIPTION • 750mW output power  Long range  Up to 1Mbps RF data rate  Miniature footprint: 0.9” x 1.63”


    Original     		PDF SiFLEX02-HP 750mW ATXMEGA256A3 900MHz AT86RF212 ATXMEGA256A3) 330-0047-R1 atmel Reflow soldering AT86RF212 PCB xmega device board SiFLEX02HP J-STD-020 atmel 906 XMEGA Application Notes

    Untitled

    Abstract: No abstract text available
    Text: SiFLEX02-HP TRANSCEIVER MODULE DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available FEATURES DESCRIPTION • 750mW output power  Long range  Up to 1Mbps RF data rate  Miniature footprint: 0.9” x 1.63”


    Original     		PDF SiFLEX02-HP 750mW ATXMEGA256A3 330-0047-R1

    Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs

    Abstract: No abstract text available
    Text: 1560 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 6, JUNE 2011 Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs Nicolas G. Constantin, Member, IEEE, Peter J. Zampardi, Senior Member, IEEE, and Mourad N. El-Gamal, Member, IEEE


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    LS900-SI-02-AXX

    Abstract: avrisp WinAVR bpsk modulation AT86RF212 PCB ATXMEGA256A3
    Text: SiFLEX02 TRANSCEIVER MODULE LS900-SI-02-AXX DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available: LSDEV-SI02-A30 FEATURES DESCRIPTION • 250mW output power  Long range: 2 miles  Up to 1Mbps RF data rate


    Original     		PDF SiFLEX02 LS900-SI-02-AXX LSDEV-SI02-A30 250mW ATXMEGA256A3 900MHz AT86RF212 ATXMEGA25 330-0009-R2 avrisp WinAVR bpsk modulation AT86RF212 PCB

    AVRISP mkII

    Abstract: AT86RF212 PCB SiFLEX02 ATXMEGA256A3 AT86RF212 1000 MHZ RF transmitter MODULE RF212 W3112A part list 24 dbi antenna ATXMEGA256A3 software guide
    Text: SiFLEX02 TRANSCEIVER MODULE DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available FEATURES DESCRIPTION • 250mW output power  Long range: 2 miles  Up to 1Mbps RF data rate  Miniature footprint: 0.9” x 1.63”


    Original     		PDF SiFLEX02 250mW ATXMEGA256A3 330-0009-R2 AVRISP mkII AT86RF212 PCB AT86RF212 1000 MHZ RF transmitter MODULE RF212 W3112A part list 24 dbi antenna ATXMEGA256A3 software guide

    AT86RF212

    Abstract: interface zigbee with AVR AVRISP mkII WinAVR XMEGA Application Notes AT86RF212 PCB ATXMEGA256A3
    Text: SiFLEX02 TRANSCEIVER MODULE DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available FEATURES DESCRIPTION • 250mW output power • Long range: 2 miles • Up to 1Mbps RF data rate • Miniature footprint: 0.9” x 1.63”


    Original     		PDF SiFLEX02 250mW ATXMEGA256A3 900MHz AT86RF212 ATXMEGA256A3) 330-0009-R2 AT86RF212 interface zigbee with AVR AVRISP mkII WinAVR XMEGA Application Notes AT86RF212 PCB

    Untitled

    Abstract: No abstract text available
    Text: IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 31, NO. 12, DECEMBER 2012 1881 Formulations and a Computer-Aided Test Method for the Estimation of IMD Levels in an Envelope Feedback RFIC Power Amplifier Nicolas G. Constantin, Member, IEEE, Kai H. Kwok, Senior Member, IEEE, Hongxiao Shao, Member, IEEE,


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    Untitled

    Abstract: No abstract text available
    Text: SiFLEX02-R2 TRANSCEIVER MODULE DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available FEATURES DESCRIPTION • 250mW output power  Long range: 2 miles  Up to 1Mbps RF data rate  Miniature footprint: 0.9” x 1.63”


    Original     		PDF SiFLEX02-R2 250mW ATXMEGA256A3U 330-0152-R1

    part list 24 dbi antenna

    Abstract: S467AH-915 2 MHz ultrasonic transceiver RF212 equivalent W3112A SiFLEX02 XMEGA Application Notes AT86RF212 PCB ATXMEGA256A3
    Text: SiFLEX02 TRANSCEIVER MODULE DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available FEATURES DESCRIPTION • 250mW output power  Long range: 2 miles  Up to 1Mbps RF data rate  Miniature footprint: 0.9” x 1.63”


    Original     		PDF SiFLEX02 250mW ATXMEGA256A3 900MHz AT86RF212 ATXMEGA256A3) 330-0009-R3 part list 24 dbi antenna S467AH-915 2 MHz ultrasonic transceiver RF212 equivalent W3112A XMEGA Application Notes AT86RF212 PCB

    xmega 128

    Abstract: AVRISP mkII AT86RF212 LS900-SI-02-A50 LSDEV-SI02-A30 XMEGA Application Notes AT86RF212 PCB ATXMEGA256A3 W3112A AVR soldering temperature
    Text: SiFLEX02 TRANSCEIVER MODULE LS900-SI-02-AXX DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available: LSDEV-SI02-A30 FEATURES DESCRIPTION • 250mW output power • Long range: 2 miles • Up to 1Mbps RF data rate


    Original     		PDF SiFLEX02 LS900-SI-02-AXX LSDEV-SI02-A30 250mW ATXMEGA256A3 SFLX-DATA-0001-01 xmega 128 AVRISP mkII AT86RF212 LS900-SI-02-A50 LSDEV-SI02-A30 XMEGA Application Notes AT86RF212 PCB W3112A AVR soldering temperature

    Untitled

    Abstract: No abstract text available
    Text: SiFLEX02 TRANSCEIVER MODULE DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available FEATURES DESCRIPTION • 250mW output power  Long range: 2 miles  Up to 1Mbps RF data rate  Miniature footprint: 0.9” x 1.63”


    Original     		PDF SiFLEX02 250mW ATXMEGA256A3 330-0009-R3

    Amplifier Research rf power amplifier schematic

    Abstract: a1 mmic astec+20850 GRM39C0G102J50V GRM39Y5V104Z25V TC3151 1803 GRM39C0G1R5C50V
    Text: TC3151 Nov. 2001 2.4 GHz 2W MMIC FEATURES • • • • • PHOTO ENLARGEMENT P-1 dB: 33 dBm Small Signal Gain: 28 dB Power Added Efficiency: 36 % IP3: 42 dBm DC Power: 5.6 W GND Pout Pout Vg RF In RF In GRD Vd DESCRIPTION The TC3151 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume,


    Original     		PDF TC3151 TC3151 002MAX Amplifier Research rf power amplifier schematic a1 mmic astec+20850 GRM39C0G102J50V GRM39Y5V104Z25V 1803 GRM39C0G1R5C50V

    PHILIPS UOC tv kit service code with data

    Abstract: All nokia mobile ic code number image BCM3419 Nokia BTS BENQ gsm module circuit PNX8550 CMOS Camera Module NOKIA philips 5.1 home theater remote control ic 14 pin CHINA TV uoc Broadcom product roadmap
    Text: World News Volume 13 Semiconductors Number 2 Technology Focus May - June 2004 Inside World News page Automotive 2 Networking 3 Technology 4 to 6 Consumer 7&8 MultiMarket Semiconductors Identification 10 Products in brief 11 Communications 12 First 32-bit IVN gateway controller


    Original     		PDF 32-bit 32-bit PHILIPS UOC tv kit service code with data All nokia mobile ic code number image BCM3419 Nokia BTS BENQ gsm module circuit PNX8550 CMOS Camera Module NOKIA philips 5.1 home theater remote control ic 14 pin CHINA TV uoc Broadcom product roadmap

    A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

    Abstract: GaN amplifier Microwave Development Company dummy load volterra N6030 GaN amplifier 100W 4G base station power amplifier combiner THEORY Square D DPA 12 MAR-2 MMIC
    Text: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications


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    Untitled

    Abstract: No abstract text available
    Text: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,


    Original     		PDF TS16949.

    CS10 Citizen

    Abstract: CS10-27.000MABJTR GRM39 CS10-27 QFN32L CS10 STB5701 STB5701TR SK-107M2N-A0 SK-107M2N-A0-20
    Text: STB5701 350 to 400 MHz FSK/ASK receiver ST-RECORD01 family Preliminary Data Features • Multiband receiver: 350MHz to 400MHz ■ FSK/ASK modulation selection ■ Programmable multichannel ■ High dynamic range with On-Chip AGC ■ PLL and fully VCO integrated


    Original     		PDF STB5701 ST-RECORD01 350MHz 400MHz CS10 Citizen CS10-27.000MABJTR GRM39 CS10-27 QFN32L CS10 STB5701 STB5701TR SK-107M2N-A0 SK-107M2N-A0-20

    Untitled

    Abstract: No abstract text available
    Text: STB5701 350 to 400 MHz FSK/ASK receiver ST-RECORD01 family Preliminary Data Features • Multiband receiver: 350MHz to 400MHz ■ FSK/ASK modulation selection ■ Programmable multichannel ■ High dynamic range with On-Chip AGC ■ PLL and fully VCO integrated


    Original     		PDF STB5701 ST-RECORD01 350MHz 400MHz

    Untitled

    Abstract: No abstract text available
    Text: ProFLEX01-SOC TRANSCEIVER MODULE DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 2.4 GHz ZigBee Light Link (ZLL) Module FEATURES •    DESCRIPTION 100mW output power Long range: 4000 feet Miniature footprint: 0.9” x 1.63” Integrated PCB F antenna or U.FL


    Original     		PDF ProFLEX01-SOC 100mW 330-0049-R1

    Untitled

    Abstract: No abstract text available
    Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: STB5701 350 to 400 MHz FSK/ASK receiver ST-RECORD01 family Preliminary Data Features • Multiband receiver: 350MHz to 400MHz ■ FSK/ASK modulation selection ■ Programmable multichannel ■ High dynamic range with On-Chip AGC ■ PLL and fully VCO integrated


    Original     		PDF STB5701 ST-RECORD01 350MHz 400MHz

    s049

    Abstract: Amplifier Research rf power amplifier schematic Amplifier Research power amplifier schematic 1G1B
    Text: POWER AMPLIFIER CF ENTERPRISES • « • it t S I iïin i Hiings hi Small Packages General Specifications Size: 1 9 "x 7 "x 1 8 " W x H x L : 47.5 cm x1 7.5 cm x 45.0 cm Weight: 35lbs maximum; 15,9Kg Cooling: Forced air (self-contained fans) AC Power:


    OCR Scan     		PDF 35lbs z/230 120VAC-60 /220VAC-50Hz) s049 Amplifier Research rf power amplifier schematic Amplifier Research power amplifier schematic 1G1B

    ACA0860A

    Abstract: ACA0860
    Text: APPLICATION NOTE - ACA0860 ACA0860 750/860 MHz CATV LINE AMPLIFIER MMIC Advanced Product Information Rev 2 Over View A new option is now available to CATV Trunk amplifier and Line Extender designers. The Anadigics ACA0860 family of surface mount monolithic GaAs RF Linear Amplifiers has been developed to


    OCR Scan     		PDF ACA0860 ACA0860 ACA0860A