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    AMPLIFIER MICRO-X MARKING 865 Search Results

    AMPLIFIER MICRO-X MARKING 865 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    AMPLIFIER MICRO-X MARKING 865 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SGM8651/2/4 SGM8653/5 50MHz, Rail-to-Rail Output CMOS Operational Amplifiers PRODUCT DESCRIPTION FEATURES The SGM8651/2/3/4/5 are high precision, low noise, low distortion, rail-to-rail output CMOS voltage feedback operational amplifiers offering ease of use and low cost.


    Original     		PDF SGM8651/2/4 SGM8653/5 50MHz, SGM8651/2/3/4/5 50MHz

    msl 9350

    Abstract: No abstract text available
    Text: RF3802 GaAs HBT PRE-DRIVER AMPLIFIER RoHS & Pb-Free Product Typical Applications • GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/EDGE/CDMA • Power Amplifier Stage for Commercial Wireless Transmitter Applications Infrastructure


    Original     		PDF RF3802 RF3802 EIA-481. msl 9350

    msl 9350

    Abstract: jack P4 GSM900 RF3802 RF3802PCBA-410 RF3802PCBA-411 marking code c45 23 C4833
    Text: RF3802 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/EDGE/CDMA • Power Amplifier Stage for Commercial Wireless Transmitter Applications


    Original     		PDF RF3802 RF3802 EIA-481. msl 9350 jack P4 GSM900 RF3802PCBA-410 RF3802PCBA-411 marking code c45 23 C4833

    RF5110G

    Abstract: c11339 device marking code c102 C11256 SIGE GaN BJT
    Text: RF5110G 3V GSM POWER AMPLIFIER RoHS & Pb-Free Product Typical Applications • 3V GSM Cellular Handsets • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible • Commercial and Consumer Systems • Portable Battery-Powered Equipment • FM Radio Applications: 150MHz/220MHz/


    Original     		PDF RF5110G 150MHz/220MHz/ 450MHz/865MHz/915MHz RF5110G 800MHz 950MHz EIA-481. c11339 device marking code c102 C11256 SIGE GaN BJT

    VA-PC 10

    Abstract: RF5110G RF5110GTR13 RF5111 C102 C112 C113 DO1608C-102 GSM900 IPC-SM-782
    Text: RF5110G 3V GSM POWER AMPLIFIER RoHS & Pb-Free Product Typical Applications • 3V GSM Cellular Handsets • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible • Commercial and Consumer Systems • Portable Battery-Powered Equipment • FM Radio Applications: 150MHz/220MHz/


    Original     		PDF RF5110G 150MHz/220MHz/ 450MHz/865MHz/915MHz RF5110G 800MHz 950MHz EIA-481. VA-PC 10 RF5110GTR13 RF5111 C102 C112 C113 DO1608C-102 GSM900 IPC-SM-782

    VA-PC 10

    Abstract: RF5110GTR7 RF5110G RF5111 C102 C112 C113 DO1608C-102 GSM900 IPC-SM-782
    Text: RF5110G 3V GSM POWER AMPLIFIER RoHS & Pb-Free Product Typical Applications • 3V GSM Cellular Handsets • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible • Commercial and Consumer Systems • Portable Battery-Powered Equipment • FM Radio Applications: 150MHz/220MHz/


    Original     		PDF RF5110G 150MHz/220MHz/ 450MHz/865MHz/915MHz RF5110G 800MHz 950MHz EIA-481. VA-PC 10 RF5110GTR7 RF5111 C102 C112 C113 DO1608C-102 GSM900 IPC-SM-782

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


    Original     		PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    100B220GW

    Abstract: 100B100GW
    Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100R3 MRF9100SR3 100B220GW 100B100GW

    6144ST

    Abstract: 14L-PDIP MCP6141 MCP6142 MCP6143 MCP6144 MCP614X 6144EST marking G3 xxx sot-23
    Text: MCP6141/2/3/4 600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps Features: Description: • • • • • • • • • The MCP6141/2/3/4 family of non-unity gain stable operational amplifiers op amps from Microchip Technology Inc. operate with a single supply voltage as low


    Original     		PDF MCP6141/2/3/4 MCP6141/2/3/4 DS21668B-page 6144ST 14L-PDIP MCP6141 MCP6142 MCP6143 MCP6144 MCP614X 6144EST marking G3 xxx sot-23

    mark 337 sot-23

    Abstract: SOT23-5 MARK AOL
    Text: MCP6141/2/3/4 600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps Features: Description: • • • • • • • • • The MCP6141/2/3/4 family of non-unity gain stable operational amplifiers op amps from Microchip Technology Inc. operate with a single supply voltage as low


    Original     		PDF MCP6141/2/3/4 MCP6143 OT-23 MCP6141/2/3/4 DS21668B-page mark 337 sot-23 SOT23-5 MARK AOL

    sn0450

    Abstract: MCP6321 MCP6231 MCP6241 MCP6241R MCP6241U 8E-00
    Text: M MCP6241 50 µA, 650 kHz Rail-to-Rail Op Amp Features Description • • • • • • The Microchip Technology Inc. MCP6241 operational amplifier Op Amp provides wide bandwidth for the quiescent current. The MCP6241 has a 650 kHz Gain Bandwidth Product (GBWP) and 77° (typ.) phase


    Original     		PDF MCP6241 MCP6241 DK-2750 D-85737 NL-5152 DS21882A-page sn0450 MCP6321 MCP6231 MCP6241R MCP6241U 8E-00

    MRF9060l equivalent

    Abstract: MRF9060 equivalent MRF9060L
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library RF Power Field Effect Transistors MRF9060LR1 MRF9060LSR1 Narrowband CDMA


    Original     		PDF MRF9060LR1 MRF9060LSR1 MRF9060l equivalent MRF9060 equivalent MRF9060L

    MCP6S91

    Abstract: MCP6S92 MCP6S93 424256 MCP6S91 equivalent 424256 memory
    Text: MCP6S91/2/3 Single-Ended, Rail-to-Rail I/O, Low-Gain PGA Features Description • Multiplexed Inputs: 1 or 2 channels • 8 Gain Selections: - +1, +2, +4, +5, +8, +10, +16 or +32 V/V • Serial Peripheral Interface SPI • Rail-to-Rail Input and Output


    Original     		PDF MCP6S91/2/3 MCP6S91/2/3 DS21908A-page MCP6S91 MCP6S92 MCP6S93 424256 MCP6S91 equivalent 424256 memory

    6242E

    Abstract: riso rz SN0418 TRANSISTOR A57
    Text: MCP6241/2 50 µA, 650 kHz Rail-to-Rail Op Amp Features Description • • • • • • The Microchip Technology Inc. MCP6241/2 operational amplifiers op amps provide wide bandwidth for the quiescent current. The MCP6241/2 has a 650 kHz Gain Bandwidth Product (GBWP) and 77° (typ.) phase


    Original     		PDF MCP6241/2 MCP6241/2 DK-2750 D-85737 NL-5152 DS21882B-page 6242E riso rz SN0418 TRANSISTOR A57

    6232E

    Abstract: MCP6231 MCP6231UT-E riso rz MCP6231R MCP6231U MCP6232 SN0418 5pin MARK AOL SC70-5 G2
    Text: MCP6231/2 20 µA, 300 kHz Rail-to-Rail Op Amp Features Description • • • • • • The Microchip Technology Inc. MCP6231/2 operational amplifiers op amps provide wide bandwidth for the quiescent current. The MCP6231/2 family has a 300 kHz Gain Bandwidth Product (GBWP) and 65°


    Original     		PDF MCP6231/2 MCP6231/2 DK-2750 D-85737 NL-5152 DS21881B-page 6232E MCP6231 MCP6231UT-E riso rz MCP6231R MCP6231U MCP6232 SN0418 5pin MARK AOL SC70-5 G2

    sn0450

    Abstract: SOT23-5 5pin Package marking AOL riso rz MCP6231 MCP6231R MCP6231U sot-23-5 marking code 187 D857 MCP6321
    Text: MCP6231 20 µA, 300 kHz Rail-to-Rail Op Amp Features Description • • • • • • The Microchip Technology Inc. MCP6231 operational amplifier op amp provides wide bandwidth for the quiescent current. The MCP6231 has a 300 kHz Gain Bandwidth Product (GBWP) and 65° (typ.) phase


    Original     		PDF MCP6231 MCP6231 D-85737 NL-5152 DS21881A-page sn0450 SOT23-5 5pin Package marking AOL riso rz MCP6231R MCP6231U sot-23-5 marking code 187 D857 MCP6321

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3

    100B330JW

    Abstract: MRF910 marking Z3 6-pin
    Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3 100B330JW MRF910 marking Z3 6-pin

    MRF9100L

    Abstract: MRF9100LSR3 marking c14 MRF9100 MRF9100LR
    Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3 MRF9100L MRF9100LSR3 marking c14 MRF9100 MRF9100LR

    Untitled

    Abstract: No abstract text available
    Text: MCP6S91/2/3 Single-Ended, Rail-to-Rail I/O, Low-Gain PGA Features Description • Multiplexed Inputs: 1 or 2 channels • 8 Gain Selections: - +1, +2, +4, +5, +8, +10, +16 or +32 V/V • Serial Peripheral Interface SPI • Rail-to-Rail Input and Output


    Original     		PDF MCP6S91/2/3 MCP6S91/2/3 of4-8870 DS21908A-page

    6S91E

    Abstract: 424256 424256 memory 6S93E MCP6S91 424256 pin out MCP6S92 MCP6S93 MCP6S91 equivalent
    Text: MCP6S91/2/3 Single-Ended, Rail-to-Rail I/O, Low-Gain PGA Features Description • Multiplexed Inputs: 1 or 2 channels • 8 Gain Selections: - +1, +2, +4, +5, +8, +10, +16 or +32 V/V • Serial Peripheral Interface SPI • Rail-to-Rail Input and Output


    Original     		PDF MCP6S91/2/3 MCP6S91/2/3 DS21908A-page 6S91E 424256 424256 memory 6S93E MCP6S91 424256 pin out MCP6S92 MCP6S93 MCP6S91 equivalent