smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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Untitled
Abstract: No abstract text available
Text: 2SC4537 Silicon NPN Epitaxial REJ03G0727-0300 Previous ADE-208-1110A Rev.3.00 Aug.10.2005 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “IS–”.
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2SC4537
REJ03G0727-0300
ADE-208-1110A)
PTSP0003ZA-A
2SC4537
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2SC4591
Abstract: 2SC4591XM-TL-E SC-59A 2SC459
Text: 2SC4591 Silicon NPN Epitaxial REJ03G0728-0300 Previous ADE-208-1111A Rev.3.00 Aug.10.2005 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking is “XM–”.
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2SC4591
REJ03G0728-0300
ADE-208-1111A)
PLSP0003ZB-A
2SC4591
2SC4591XM-TL-E
SC-59A
2SC459
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2SC4537
Abstract: 2SC4537IS-TL-E PTSP0003ZA-A
Text: 2SC4537 Silicon NPN Epitaxial REJ03G0727-0300 Previous ADE-208-1110A Rev.3.00 Aug.10.2005 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “IS–”.
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2SC4537
REJ03G0727-0300
ADE-208-1110A)
PTSP0003ZA-A
2SC4537
2SC4537IS-TL-E
PTSP0003ZA-A
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2SC4591
Abstract: 2SC4591XM-TL-E SC-59A
Text: 2SC4591 Silicon NPN Epitaxial REJ03G0728-0300 Previous ADE-208-1111A Rev.3.00 Aug.10.2005 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking is “XM–”.
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2SC4591
REJ03G0728-0300
ADE-208-1111A)
PLSP0003ZB-A
2SC4591
2SC4591XM-TL-E
SC-59A
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Untitled
Abstract: No abstract text available
Text: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
300mA
MMBTA55
MMBTA56
OT-23
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REJ03G0711-0300
Abstract: 2SC3127 2SC3127ID-TL-E SC-59A
Text: 2SC3127 Silicon NPN Epitaxial REJ03G0711-0300 Previous ADE-208-1080A Rev.3.00 Aug.10.2005 Application UHF/VHF wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking for 2SC3127 is “ID–”.
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2SC3127
REJ03G0711-0300
ADE-208-1080A)
PLSP0003ZB-A
2SC3127
REJ03G0711-0300
2SC3127ID-TL-E
SC-59A
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Untitled
Abstract: No abstract text available
Text: 2SC3127 Silicon NPN Epitaxial REJ03G0711-0300 Previous ADE-208-1080A Rev.3.00 Aug.10.2005 Application UHF/VHF wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking for 2SC3127 is “ID–”.
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2SC3127
REJ03G0711-0300
ADE-208-1080A)
PLSP0003ZB-A
2SC3127
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transistor marking 3em
Abstract: MMBTH10
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product Marking Code: 3EM NPN VHF/UHF
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MMBTH10
OT-23
100MHz,
300us,
transistor marking 3em
MMBTH10
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT918 Features • • Designed for VHF/UHF Amplifier applications. Marking Code: MMBT918=M3B NPN VHF/UHF Transistors C Pin Configuration
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MMBT918
MMBT918
OT-23
100MHz,
60MHz)
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Untitled
Abstract: No abstract text available
Text: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
OT-23
300mA
MMBTA56
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marking 2GM x
Abstract: No abstract text available
Text: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
300mA
MMBTA55
MMBTA56
OT-23
marking 2GM x
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Germanium power
Abstract: No abstract text available
Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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BGA615L7
D-81541
BGA615L7
BGA619
Germanium power
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philips catalog potentiometer
Abstract: DIODE MARKING code GM NE5517 smd transistor marking code XC NE5517D smd NE5517 application notes sot1091-1 DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SMD IC MARKING I5 I5 smd transistor
Text: INTEGRATED CIRCUITS NE5517/NE5517A/AU5517 Dual operational transconductance amplifier Product data Replaces NE5517/NE5517A dated 2001 Aug 03 Philips Semiconductors 2002 Dec 06 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier
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NE5517/NE5517A/AU5517
NE5517/NE5517A
NE5517/NE5517A/
AU5517
AU5517
NE5517
AU5517/NE5517
01-Dec-01)
philips catalog potentiometer
DIODE MARKING code GM
smd transistor marking code XC
NE5517D smd
NE5517 application notes
sot1091-1
DUAL GENERAL PURPOSE TRANSISTORS marking code D3
SMD IC MARKING I5
I5 smd transistor
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION A Add typical limits to Table I. Make correction the HBM description under 1.3. Make correction to the CS description under FIGURE 2. Add footnote 2/ under 6.3. - ro DATE APPROVED 07-04-03 R. HEBER Prepared in accordance with ASME Y14.24
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ISL8842AMBEP
V62/07621-04XB
8843AMBEP
ISL8843AMBEP
V62/07621-05XB
8844AMBEP
ISL8844AMBEP
V62/07621-06XB
8845AMBEP
ISL8845AMBEP
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA58602 High precision operational amplifier Product data File under Integrated Circuits, Standard Analog Philips Semiconductors 2001 Oct 03 Philips Semiconductors Product data High precision operational amplifier SA58602 GENERAL DESCRIPTION
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SA58602
SA58602
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maxim marking 033
Abstract: Small-outline integrated circuit SOT 143 2U42
Text: 19-1135; Rev 1; 8/03 KIT ATION EVALU E L B A AVAIL DC-to-Microwave, +5V Low-Noise Amplifier _Features ♦ Internally Biased The device is internally biased, eliminating the need for external bias resistors or inductors. In a typical application, the only external components needed are input
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900MHz
OT143
MAX2650
900MHz.
MAX2650PC
MAX2650EUS+
OT-143
21-0052F
maxim marking 033
Small-outline integrated circuit SOT 143
2U42
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BGA915
Abstract: No abstract text available
Text: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA915N7
BGA915
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Untitled
Abstract: No abstract text available
Text: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA915N7
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MACY1-X8
Abstract: 7800304XA qml-38535 LM144H 7800303PA 7800303x 7800304PA 7800302GC
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Pg 2: Added outline letter X. Pg 6: Added package X. Pg 10: Added package X 78-05-17 N. A. HAUCK B Pg 2, 4, 11: Added device 02. 79-04-12 N. A. HAUCK C Pg 2, 4, 5, 8, 12: Added device 03. Pg 10: Correct table II. Pg 11: Correct 6.3
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lga 4x4 footprint
Abstract: block diagram of is-95
Text: TQS - COMPANY PROPRIETARY INFORMATION SPEC NO: DAT.TQM713019 REV: F SPEC TITLE: TQO PRODUCT DATA SHEET FOR TQM713019 PAGE: 0 of 16 4x4 CDMA PA MODULE DATE 08-27-04 09-30-04 02-01-05 03-16-05 ECN# 26479 26668 27619 28055 E 04-25-06 32016 F 07-05-06 32746 DESCRIPTION OF CHANGE
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TQM713019
lga 4x4 footprint
block diagram of is-95
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marking code SG transistors
Abstract: ic MARKING FZ 2SC4713K 2SC4774 marking code SG transistor
Text: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM *, where ★ is hFE code • very low output on state resistance • low capacitance Applications • radio frequency amplifier
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2SC4713K
2SC4774
SC-59)
SC-70)
2SC4774;
2SC4713K,
marking code SG transistors
ic MARKING FZ
2SC4774
marking code SG transistor
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npn, transistor, sc 107 b
Abstract: MOTOROLA DATE CODE transistor
Text: MSC2295-BT1* MSC2295-CT1* CASE 318D-03, STYLE 1 COLLECTOR MAXIMUM RATINGS 3 Ï A = 25 C Rating Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value Unit v (BR)CBO 30 Vdc V(BR)CEO 20 Vdc v (BR)EBO
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MSC2295-BT1*
MSC2295-CT1*
318D-03,
SC-59
MSC2295-BT1
MSC2295-CT1
MSC2295-BT1
npn, transistor, sc 107 b
MOTOROLA DATE CODE transistor
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