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    AMPLIFIER DFN 2X2 GAIN Search Results

    AMPLIFIER DFN 2X2 GAIN Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TK170V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.17 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK125V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.125 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK210V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.21 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK099V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.099 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    LBEE5XV2BZ-883 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd

    AMPLIFIER DFN 2X2 GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING RFMD

    Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z MARKING RFMD CXE2022Z CXE2022SR inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7

    Untitled

    Abstract: No abstract text available
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z

    CXE2022SR

    Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE2022SR CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z amplifier DFN 2x2 MARKING RFMD CXE2022

    CXE-2022

    Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE-2022 MARKING RFMD InP transistor HEMT optimum recievers 106-172 106172

    8901mp

    Abstract: APE8901 APE8901X amplifier DFN 2x2 AX59 2x2 dfn esop8 amplifier DFN 2x2 gain ESOP-8
    Text: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTION Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response


    Original     		PDF APE8901 OT-26 APE8901 8901MP M1-MP-8-G-v01 8901mp APE8901X amplifier DFN 2x2 AX59 2x2 dfn esop8 amplifier DFN 2x2 gain ESOP-8

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR DESCRIPTION FEATURES Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response


    Original     		PDF APE8901 APE8901 8901MP

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8901-HF-3 1A Ultra Low Dropout Linear Regulator Description Features Ultra Low Dropout of 0.2V typ. at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable Reference Voltage of 0.8V


    Original     		PDF APE8901-HF-3 OT-26 APE8901 appl90 APE8901 8901MP

    APE8901

    Abstract: diagram 12v power amplifier 8901mp 2x2 dfn amplifier DFN 2x2 gain
    Text: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR DESCRIPTION FEATURES Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response


    Original     		PDF APE8901 APE8901 8901MP diagram 12v power amplifier 8901mp 2x2 dfn amplifier DFN 2x2 gain

    RT9148GJ5

    Abstract: RT9148
    Text: RT9148/9 20V, 350mA, Rail-to-Rail Operational Amplifier General Description Features The RT9148/9 consists of a low power, high slew rate, single supply rail-to-rail input and output operational amplifier. The RT9148 contains a single amplifier and RT9149 contains two amplifiers in one package.


    Original     		PDF RT9148/9 350mA, RT9148/9 RT9148 RT9149 350mA 350mA RT9148GJ5

    Untitled

    Abstract: No abstract text available
    Text: HMC788LP2E v00.0510 Amplifiers - Driver & Gain Block - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E

    GaAs DFN 2x2

    Abstract: No abstract text available
    Text: HMC788LP2E v02.0311 Amplifiers - Driver & Gain Block - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E GaAs DFN 2x2

    HMC788LP2E

    Abstract: DFN PACKAGE thermal resistance 0402 resistor 1
    Text: HMC788LP2E v00.0510 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E HMC788LP2al DFN PACKAGE thermal resistance 0402 resistor 1

    Untitled

    Abstract: No abstract text available
    Text: HMC788ALP2E v00.0913 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788ALP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +33 dBm • LO Driver Applications


    Original     		PDF HMC788ALP2E HMC788ALP2E

    Untitled

    Abstract: No abstract text available
    Text: HMC788LP2E v03.0913 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E

    APE8838

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8838 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8838 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the


    Original     		PDF 150mV 100mA 200mA/channel OT-26 APE8838 APE8838 ThSOT-26 I1-N3S6-G-v00

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8837 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8837 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the


    Original     		PDF APE8837 APE8837 250mA

    Untitled

    Abstract: No abstract text available
    Text: HMC788LP2E v02.0311 Amplifiers - Driver & GAin Block - smT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The Hmc788lp2e is ideal for: p1dB output power: +20 dBm • cellular/3G & lTe/WimAX/4G output ip3: +30 dBm • lo Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E

    ceramic capacitor footprint dimension

    Abstract: APE8837 transistor 2x2 6pin 2x2 dfn TRANSISTOR MARKING CODE 1F 6PIN
    Text: Advanced Power Electronics Corp. APE8837 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8837 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the


    Original     		PDF 150mV 100mA 200mA/channel OT-26 APE8837 APE8837 ThT-26 I1-N3S6-G-v00 ceramic capacitor footprint dimension transistor 2x2 6pin 2x2 dfn TRANSISTOR MARKING CODE 1F 6PIN

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8838 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8838 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the


    Original     		PDF APE8838 APE8838 250mA

    7805 sot23

    Abstract: 7805 to92 Datasheet superheterodyne receiver WCDMA LT5517 7805 5v TO92 7805 to92 FM Modulator 2GHz GSM project circuit LT1715 LT5502
    Text: 10.2006 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form


    Original     		PDF WSB10K1205 7805 sot23 7805 to92 Datasheet superheterodyne receiver WCDMA LT5517 7805 5v TO92 7805 to92 FM Modulator 2GHz GSM project circuit LT1715 LT5502

    7805 to92

    Abstract: 7805 sot23 7805 to92 Datasheet LTC1569 LTC2602 LT5526 LT6600-5 LTC1569-6 LT1993-2 LT5514
    Text: 10.2006 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form


    Original     		PDF WSB10K1205 7805 to92 7805 sot23 7805 to92 Datasheet LTC1569 LTC2602 LT5526 LT6600-5 LTC1569-6 LT1993-2 LT5514

    LT5526

    Abstract: LT1993-2 LT5514 LT5522 LT5524 LT5527 TS16949 LT6600-20 47DBM LTC2624
    Text: 12.2005 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form


    Original     		PDF cornerston93) D-73230 I-20156 SE-164 WSB10K1205 LT5526 LT1993-2 LT5514 LT5522 LT5524 LT5527 TS16949 LT6600-20 47DBM LTC2624

    RT9148

    Abstract: No abstract text available
    Text: RT9148/9 20V, 350mA, Rail-to-Rail Operational Amplifier General Description Features The RT9148/9 consists of a low power, high slew rate, single supply rail-to-rail input and output operational amplifier. z z z z z The RT9148/9 has a high slew rate 35V/ s , 350mA peak


    Original     		PDF RT9148/9 350mA, RT9148/9 RT9148 RT9149 350mA RT9148/

    amplifier DFN 2x2 gain

    Abstract: No abstract text available
    Text: AP1110 2.4~2.5 GHz Power Amplifier 2004.12.21 Preliminary AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT Bluetooth Class1 applications.


    Original     		PDF AP1110 AP1110 23dBm 150mA 23dBm -33dBc amplifier DFN 2x2 gain