RESISTOR CR25 philips
Abstract: philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS
Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with 2 transistors BLV33F ECO8005 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION
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BLV33F
ECO8005
SCA57
RESISTOR CR25 philips
philips resistor CR25
hp778d
pm5171
BZY 56
cr25 philips
RESISTOR CR25
BLV33F
2222-809-05002
tv schematic diagram PHILIPS
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AMPLIFIER 2 MHZ 100W
Abstract: power -22d UHF/power amplifiers amplifier power diode 100W diode 2215 amplifier 100w power
Text: UHF POWER AMPLIFIER PA-2215 SPECIFICATION 1. Frequency Rang: . . . . . . . . . . . . . . . . . . . . . 500÷1000 MHz 2. Power Output: . . . . . . . . . . . . . . . . . . . . . . 100W CW min 3. Power Input: . . . . . . . . . . . . . . . . . . . . . . . 10 mW
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PA-2215
AMPLIFIER 2 MHZ 100W
power -22d
UHF/power amplifiers
amplifier
power diode
100W diode
2215
amplifier 100w
power
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hp778d
Abstract: pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56
Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with two transistors BLV33 ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION
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BLV33
ECO7904
SCA57
hp778d
pm5171
RESISTOR CR25
RESISTOR CR25 philips
MGP990
2222-809-05002
2222-121
philips capacitor cross reference
PR52
BZY 56
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LINEAR AMPLIFIER 2 MHZ 100W
Abstract: No abstract text available
Text: P/N 30-2-100-35-A3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 2 - 30 MHz 100 Watts Gain: 35 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw minimum Frequency Range 2 - 30 MHz Gain
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30-2-100-35-A3
30-2-100-35-A3
LINEAR AMPLIFIER 2 MHZ 100W
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rf amplifier 100w
Abstract: No abstract text available
Text: polyfet rf devices MKAL01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 2 to 100 Mhz Gain = 50.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MKAL01 is a 100 Watt, high gain amplifier module covering a bandwidth of 2-100 Mhz. This compact module design is
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MKAL01
MKAL01
MKAL01:
100kHz
rf amplifier 100w
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arinc 600 enclosure
Abstract: ARINC 600 Connector HPAS162172C-12 rf amplifier 100w 50W linear power amplifier 100W POWER AMPLIFIER 100w audio amplifier fm amplifier 100w radar circulator LINEAR AMPLIFIER 2 MHZ 100W
Text: AIRBORNE SATCOM POWER AMPLIFIER MODEL HPAS162172C-12 Features: • 1610-1660 MHz • 100W CW • 20W CDMA Linear Operation • 128 Kbps Data Rate • ARINC 2 MCU Enclosure • <11 lbs. • Voice/Video/Internet/Data Real Time Cabin & Cockpit Video Monitoring
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HPAS162172C-12
RS-422
RTCA/DO-160D
128kbps
DO-160D
11dBw
20dBw
RS422Control
RS422Bus
arinc 600 enclosure
ARINC 600 Connector
HPAS162172C-12
rf amplifier 100w
50W linear power amplifier
100W POWER AMPLIFIER
100w audio amplifier
fm amplifier 100w
radar circulator
LINEAR AMPLIFIER 2 MHZ 100W
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capacitor 100pf
Abstract: No abstract text available
Text: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY
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DB-900-100W
PD57060S
DB-900-100W
IS-54/-136
IS-95
capacitor 100pf
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AD8066
Abstract: ad8065 photodiode circuit AD8065 AD8065AR AD8065AR-REEL AD8065AR-REEL7 AD8065ART-REEL AD8065ART-REEL7 AD8066AR schematics for a PA amplifier
Text: a FEATURES FET Input Amplifier 1 pA Input Bias Current Low Cost High Speed 145 MHz, –3 dB Bandwidth G = +1 180 V/s Slew Rate (G = +2) Low Noise 7 nV/÷Hz (f = 10 kHz) 0.6 fA/÷Hz (f = 10 kHz) Wide Supply Voltage Range 5 V to 24 V Single-Supply and Rail-to-Rail Output
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OT-23-5,
AD8065/AD8066*
AD8066
ad8065 photodiode circuit
AD8065
AD8065AR
AD8065AR-REEL
AD8065AR-REEL7
AD8065ART-REEL
AD8065ART-REEL7
AD8066AR
schematics for a PA amplifier
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SMD MARKING g5 sot
Abstract: sot-23 package marking J9
Text: D-8 DBV-5 DGN-8 THS3201 DGK-8 www.ti.com SLOS416B – JUNE 2003 – REVISED MARCH 2008 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES 1 • Unity Gain Bandwidth: 1.8 GHz • High Slew Rate: 6700 V/µs G = 2 V/V, RL = 100 Ω, 5-V Step • IMD3: –78 dBc at 20 MHz: (G = 10 V/V,
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THS3201
SLOS416B
THS3201
SMD MARKING g5 sot
sot-23 package marking J9
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Untitled
Abstract: No abstract text available
Text: Coaxial High Power Amplifier 50Ω 100W HPA-272+ 700 to 2700 MHz The Big Deal • • • • • • High output power, 100W typ. High gain, 48 dB typ. Excellent reverse isolation, 89 dB typ. Rugged 3U rack mount case style with internal fans Operates from AC line power: 110/220V
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HPA-272+
110/220V
NG1942
110/220V
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Untitled
Abstract: No abstract text available
Text: Coaxial High Power Amplifier 50Ω 100W HPA-272+ 700 to 2700 MHz The Big Deal • • • • • • High output power, 100W typ. High gain, 48 dB typ. Excellent reverse isolation, 89 dB typ. Rugged 3U rack mount case style with internal fans Operates from AC line power: 110/220V
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HPA-272+
110/220V
NG1942
110/220V
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100W POWER AMPLIFIER
Abstract: No abstract text available
Text: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency :1MHz～1000MHz ■ Output Power :100W min. @1dB Comp. R&K-A001M102-5050R APPLICATION EMC(Electoromagnetic Compatibility) Accelerator Application Telecommunication Test and Measurement Application
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1000MHz
K-A001M102-5050R
A001M102-5050R
1000MHz
100MHz
200MHz
500MHz
100W POWER AMPLIFIER
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GaN 100 watt
Abstract: rf amplifier 100w ZHL-100W-GANX
Text: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9
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ZHL-100W-GAN+
ZHL-100W-GANX+
GaN 100 watt
rf amplifier 100w
ZHL-100W-GANX
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GaN amplifier 100W
Abstract: class h amplifier 100w ZHL-100W-GAN ZHL-100W-GANX rf power amplifier 100w fm amplifier 100w rf amplifier 100w GaN 100 watt BT1165 amplifier mini-circuits
Text: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9
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ZHL-100W-GAN+
ZHL-100W-GANX+
GaN amplifier 100W
class h amplifier 100w
ZHL-100W-GAN
ZHL-100W-GANX
rf power amplifier 100w
fm amplifier 100w
rf amplifier 100w
GaN 100 watt
BT1165
amplifier mini-circuits
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rf amplifier 100w
Abstract: rf power amplifier 100w THV100 LINEAR AMPLIFIER 2 MHZ 100W 100W POWER AMPLIFIER RF gain 230MHZ
Text: THV100 100W Class A VHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and linear, push-pull transistors with gold metallization and diffused emitter ballast resistors to enhance reliability. • •
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THV100
40W267
rf amplifier 100w
rf power amplifier 100w
THV100
LINEAR AMPLIFIER 2 MHZ 100W
100W POWER AMPLIFIER
RF gain
230MHZ
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12v class d amplifier 100W
Abstract: No abstract text available
Text: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463A
ARF463B
O-247
100MHz
ARF463A
ARF463B
12v class d amplifier 100W
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58nH
Abstract: 12v class d amplifier 100W
Text: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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O-247
ARF463AP1
ARF463BP1
100MHz
ARF463BP1
58nH
12v class d amplifier 100W
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12v class d amplifier 100W
Abstract: No abstract text available
Text: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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O-247
ARF463AP1
ARF463BP1
100MHz
ARF463BP1
12v class d amplifier 100W
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Untitled
Abstract: No abstract text available
Text: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency:9kHz～250MHz ■ Output Power :100W min. @1dB Comp. R&K-A009K251-5050R SPECIFICATIONS ＠＋25℃ OUTLINE DRAWING Frequency Range Small Signal Gain Gain Flatness Output Power
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250MHz
K-A009K251-5050R
A009K251-5050R
250MHzã
10MHz
100MHz
150MHz
200MHz
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ARF463A/B
Abstract: No abstract text available
Text: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463A
ARF463B
O-247
100MHz
ARF463A
ARF463B
ARF463A/B
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12v class d amplifier 100W
Abstract: No abstract text available
Text: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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O-247
ARF463AP1
ARF463BP1
100MHz
ARF463BP1
12v class d amplifier 100W
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B3-28
Abstract: 2N6199 B25-28 Scans-00115709 B328
Text: 0182998 ACRIAN INC "t? de i D i a a ^ f l DDoiass 4 | T "D - 2 3 - tf CRIAN !BS9n!íiflKSBP/flii!8BS!BR !í B25-28 2N6199 GENERAL DESCRIPTION The B25-28 is specifically designed for VHF broadband linear power amplifier applications in the 100-200 MHz range. The device is capable of operating in Class A,
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23-tf
B25-28
100mA
B3-28
2N6199
Scans-00115709
B328
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2N3263
Abstract: 2N3265 2N3266 jp6c 2n3264
Text: TYPES 2N3263. 2N3264. 2N326S. 2N3266 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED SWITCHING APPLICATIONS 30 Œ H • mc < Min fT = 20 MHz s P * *mechanical data U 2 N 3263, 2N 3 2 6 4 VI Z u T H E CO LLE C TO R IS IN E L E C T R IC A L C O N T A C T W IT H T H E CASE
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2N3263.
2N3264.
2N326S.
2N3266
2N3263
2N3265
jp6c
2n3264
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40362
Abstract: 40410 40319 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .
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lc-30A
130x130
180x180
210x210
BU106
2N5840
2N5240
2N6510
2N6308
2N5805
40362
40410
40319
BU106
2N5239
2N5240
2N5805
2N5838
2N5840
2N6251
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