Untitled
Abstract: No abstract text available
Text: NJG1126HB6 2GHz BAND LOW NOISE AMPLIFIER •GENERAL DESCRIPTION ■PACKAGE OUTLINE NJG1126HB6 is a low noise amplifier GaAs MMIC designed for 2GHz band application, and 1.7-3.8GHz operation with modified schematic. This IC has the function which bypasses LNA, and high gain mode or low gain mode
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NJG1126HB6
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MT3S14T
Abstract: No abstract text available
Text: MT3S14T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S14T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Buffer Applications • • Superior performance in buffer applications Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 7 dB f =2GHz
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MT3S14T
MT3S14T
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VHF-UHF Band Low Noise Amplifier
Abstract: TOSHIBA Transistor IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S14T UHF transistor GHz
Text: MT3S14T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S14T VHF~UHF Band Low-Noise Amplifier Applications Unit: mm VHF~UHF Band Buffer Applications • • Superior performance in buffer applications Superior noise characteristics 2 : NF = 1.7 dB, |S21e| = 7 dB f =2GHz
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MT3S14T
VHF-UHF Band Low Noise Amplifier
TOSHIBA Transistor
IC vhf/uhf Amplifier
transistor amplifier VHF/UHF
MT3S14T
UHF transistor GHz
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MT3S14T
Abstract: No abstract text available
Text: MT3S14T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S14T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Buffer Applications • • Superior performance in buffer applications Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 7 dB f =2GHz
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MT3S14T
MT3S14T
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SM 4151
Abstract: No abstract text available
Text: ALM-32220 1.7 GHz – 2.7 GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-32220 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the
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ALM-32220
ALM-32220
20-lead
AV02-1146EN
SM 4151
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Amplifier 1.7 2Ghz
Abstract: ALM-32220 142.58
Text: ALM-32220 1.7 GHz – 2.7 GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-32220 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the
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ALM-32220
ALM-32220
20-lead
AV02-1146EN
Amplifier 1.7 2Ghz
142.58
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TOKO 3702
Abstract: No abstract text available
Text: MGA-30216 1.7-2.7GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30216 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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MGA-30216
MGA-30216
AV02-1065EN
TOKO 3702
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"15 GHz" power amplifier 41dBm
Abstract: GJM1555C1H1R6BB01 GJM1555C1H200JB01 A004R GRM155R71C104KA88D GRM21BR61E225KA12L LLP1005-FH1N0B LLP1005-FH2N2C MGA-30216 MGA-30216-TR1G
Text: MGA-30216 1.7-2.7GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30216 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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MGA-30216
MGA-30216
AV02-1065EN
"15 GHz" power amplifier 41dBm
GJM1555C1H1R6BB01
GJM1555C1H200JB01
A004R
GRM155R71C104KA88D
GRM21BR61E225KA12L
LLP1005-FH1N0B
LLP1005-FH2N2C
MGA-30216-TR1G
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Untitled
Abstract: No abstract text available
Text: ALM-31222 1.7-2.7GHz 1-Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-31222 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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ALM-31222
ALM-31222
AV02-1179EN
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LLP1005-FH1N2B
Abstract: No abstract text available
Text: MGA-30216 1.7-2.7GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30216 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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MGA-30216
MGA-30216
AV02-1065EN
LLP1005-FH1N2B
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Untitled
Abstract: No abstract text available
Text: MGA-30216 1.7-2.7GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30216 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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MGA-30216
MGA-30216
AV02-1065EN
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GJM1555C1H200JB01
Abstract: MGA-30216 LLP1005-FH2N2C A004R GRM155R71C104KA88D GRM21BR61E225KA12L LLP1005-FH1N0B GJM1555C1H1R8BB01 2.4-2.7GHz 2W Power Amplifier GJM1555C1H2R0BB01
Text: MGA-30216 1.7-2.7GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30216 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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MGA-30216
MGA-30216
AV02-1065EN
GJM1555C1H200JB01
LLP1005-FH2N2C
A004R
GRM155R71C104KA88D
GRM21BR61E225KA12L
LLP1005-FH1N0B
GJM1555C1H1R8BB01
2.4-2.7GHz 2W Power Amplifier
GJM1555C1H2R0BB01
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ta 7384
Abstract: 30116 A004R ALM-31122 ALM-31222 ALM31222-BLKG ALM31222-TR1G ALM31222-TR2G MGA-30116 RO4350
Text: ALM-31222 1.7-2.7GHz 1-Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-31222 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.
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ALM-31222
ALM-31222
AV02-1179EN
ta 7384
30116
A004R
ALM-31122
ALM31222-BLKG
ALM31222-TR1G
ALM31222-TR2G
MGA-30116
RO4350
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Untitled
Abstract: No abstract text available
Text: ALM-31222 1.7-2.7GHz 1-Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-31222 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.
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ALM-31222
ALM-31222
22-lead
AV02-1179EN
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ic 74595
Abstract: PIN CONFIGURATION IC 555 RF NPN POWER TRANSISTOR C 10-12 GHZ IC 70439 118.076 2 F transistor h a 431 transistor ic 701 97979 THN4201
Text: THN4201 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB Typ. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Pin Configuration
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THN4201
OT343
THN4201E
THN4201Z
OT323
000GHz
200GHz
400GHz
600GHz
800GHz
ic 74595
PIN CONFIGURATION IC 555
RF NPN POWER TRANSISTOR C 10-12 GHZ
IC 70439
118.076
2 F transistor
h a 431 transistor
ic 701
97979
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130009 power transistor
Abstract: 70603 transistor 70603 74718 166722 34053 159237 75168 60310 THN4201E
Text: THN4201 Series Semiconductor SiGe NPN Transistor SOT-523 □ Application Unit in mm LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain
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THN4201
OT-523
THN4201U
OT-323
OT-343
000GHz
200GHz
400GHz
600GHz
800GHz
130009 power transistor
70603
transistor 70603
74718
166722
34053
159237
75168
60310
THN4201E
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BFG425
Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly
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RNR-T45-96-B-773
14-Nov-1996
BFG425W
BFG425W
BFG400W
100KHz
BFG425
BFG410W
TRANSISTOR noise figure measurements
2 GHz LNA
RNR-T45-96-B-773
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1310nm PIN Photodetector
Abstract: VSC7970 VSC7970-W photodetector VSC7970WE-01 30870
Text: Advance Product Information Subject to Change VSC7970 Data Sheet 2.5Gb/s Transimpedance Amplifier with Photocurrent Monitor FEATURES ● ● ● ● ● ● APPLICATIONS Single +3.3V Supply 5kΩ Differential Transimpedance 2GHz Small Signal Bandwidth Low Power Consumption for SFF Applications
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VSC7970
OC-48/STM-16
VSC7970
VSC7970cts
VMDS-10065
1310nm PIN Photodetector
VSC7970-W
photodetector
VSC7970WE-01
30870
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MT3S14FS
Abstract: No abstract text available
Text: MT3S14FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S14FS Unit: mm 1 3 2 0.1±0.05 +0.02 Lead Pb -free. 0.8±0.05 1.0±0.05 0.48 -0.04 • Superior performance in buffer applications Superior noise characteristics 2 :NF = 1.7 dB, |S21e| = 7 dB (f =2GHz)
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MT3S14FS
MT3S14FS
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Untitled
Abstract: No abstract text available
Text: MGA-31389 0.1W High Gain Driver Amplifier 50MHz ~ 2GHz Data Sheet Description Features Avago Technologies MGA-31389 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features flat high gain with excellent
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MGA-31389
50MHz
MGA-31389
OT-89
AV02-2586EN
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Untitled
Abstract: No abstract text available
Text: MGA-31389 0.1W High Gain Driver Amplifier 50MHz ~ 2GHz Data Sheet Description Features Avago Technologies MGA-31389 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features flat high gain with excellent
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MGA-31389
50MHz
MGA-31389
OT-89
AV02-2586EN
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Untitled
Abstract: No abstract text available
Text: MGA-31389 0.1W High Gain Driver Amplifier 50MHz ~ 2GHz Data Sheet Description Features Avago Technologies MGA-31389 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features flat high gain with excellent
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MGA-31389
50MHz
MGA-31389
OT-89
AV02-2586EN
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2SC4318
Abstract: No abstract text available
Text: TOSHIBA 2SC4318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 1.6 MAX. 4.6 MAX. • . Low Noise Figure, High Gain. Q4±a05 1.7 MAX. g N F = l.ld B , |S2 ie l2 —lldB f= 1GHz l - MAXIMUM RATINGS (Ta = 25°C)
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2SC4318
2SC4318
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ibm rev 1.2
Abstract: RF1111
Text: I =¥= = = = ’= Advance IBMSGRF1111 IBMSGRF1111 EV SiGe High Dynamic Range 1900MHz Low Noise Am plifier Features • 1.7 GHz/2GHz operation for cellular and digital wireless applications • High IIP3 and Low Noise meet demanding system requirements • Low power, single supply 3 volts
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IBMSGRF1111
1900MHz
OT23-6
IS-95/IS-98
IS-136.
ibm rev 1.2
RF1111
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