BDY57
Abstract: BDY58
Text: Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING See Fig.2
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BDY57
BDY58
BDY57
10MHz
BDY58
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GLBCP56
Abstract: GLBCX53
Text: ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D GLBCP56 N P N S I L I C O N E P I TA X I A L T R A N S I S T O R Description The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Features Collector-Emitter Voltage: VCEO=80V
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2006/01/02D
GLBCP56
GLBCP56
GLBCX53
OT-223
GLBCX53
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BDY58
Abstract: BDY57
Text: SavantIC Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING See Fig.2
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BDY57
BDY58
BDY57
10MHz
BDY58
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2SB980
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB980 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifications.
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2SB980
-120V
-120V;
-20mA;
2SB980
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ST T4 1060
Abstract: corning fiber optic cables SMF-28E corning fiber optic T4 1060 optical fiber cable corning wdm 1480 corning smf cable
Text: Wavelength Division Multiplexing WDM Devices W-PM PUMP WDMS Features: • Ultra high isolation • High port isolation • Customer defined specifications • Low insertion loss • Environmentally stable Applications: • Telecommunications • Fiber amplifications
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1480/1550nm
980/1550nm
ST T4 1060
corning fiber optic cables
SMF-28E
corning fiber optic
T4 1060
optical fiber cable corning
wdm 1480
corning smf cable
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
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NEC JAPAN
Abstract: NESG2021M16 NESG2021M16-T3
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M16
NEC JAPAN
NESG2021M16
NESG2021M16-T3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M05
NESG2021M05
NESG2021M05-T1
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Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
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NESG2021M05
NESG2021M05-A
NESG2021M05-T1-A
PU10188EJ02V0DS
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2SC1030
Abstract: No abstract text available
Text: Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage
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2SC1030
2SC1030
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2SB941
Abstract: 2SD1266 2sB941 transistor 2SB941 Q
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB941 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 APPLICATIONS ·Designed for low-frequency power amplifications.
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2SB941
2SD1266
10MHz
2SB941
2SD1266
2sB941 transistor
2SB941 Q
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. NESG2021M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • • <R> This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
NESG2021M05
PU10188EJ02V0DS
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2031M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0035EJ0400 Rev. 4.00 Jun 20, 2012 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2031M05
R09DS0035EJ0400
NESG2031M05
NESG2031M05-T1
NESG2031M05ctronics
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
NESG2021M05
NESG2021M05-T1
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2SB1362
Abstract: 2SD2053
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2053 APPLICATIONS ·Designed for high power amplifications.
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2SB1362
-150V
2SD2053
-150V;
-20mA;
2SB1362
2SD2053
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2SB940
Abstract: 2SD1264
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB940 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·High Collector Power Dissipation ·Complement to Type 2SD1264 APPLICATIONS ·Designed for power amplifications and TV vertical
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2SB940
-150V
2SD1264
-50mA
-200V;
-150mA;
10MHz
2SB940
2SD1264
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Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
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NESG2021M16
NESG2021M16
NESG2021M16-A
PU10393EJ03V0DS
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7313
Abstract: amplifier 2606 Optical power Splitter furukawa standard erfa 33212 optical amplifier EDFA "electrical connector"
Text: Data Sheet ErFA 3321x Series Mar. 2010 EDFA for Analog CATV networks Applications z Video, analog or Booster applications z Single-channel or small number of channel networks Product type: ErFA 33211, 33212, 33213, 33214 Descriptions ErFA3321x Series is designed for use in video, analog, or booster amplifications. Amplifier
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3321x
ErFA3321x
RS232
24dBm
P10CA750-05
7313
amplifier 2606
Optical power Splitter
furukawa standard
erfa
33212
optical amplifier EDFA
"electrical connector"
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D45H10
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification D45H10 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·For general purpose power amplifications and switching regulators,converters and
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D45H10
O-220C
O-220)
D45H10
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2sd847
Abstract: 2SB757
Text: SavantIC Semiconductor Product Specification 2SD847 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SB757 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers
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2SD847
2SB757
2sd847
2SB757
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2sb1017
Abstract: 2SD1408 V2409
Text: SavantIC Semiconductor Product Specification 2SB1017 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1408 · APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage
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2SB1017
O-220Fa
2SD1408
0-25W
2sb1017
2SD1408
V2409
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D45H10
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification D45H10 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Fast switching speeds ・Low collector saturation voltage APPLICATIONS ・For general purpose power amplifications and switching regulators,converters and
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D45H10
O-220C
O-220)
D45H10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M16
NESG2021M16-A
M8E0904E
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2SB757
Abstract: 2SD847
Text: JMnic Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High collector current ・Wide area of safe operation ・Complement to type 2SD847 APPLICATIONS ・Audio amplifications ・Serie regulators ・General purpose power amplifiers
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2SB757
2SD847
-10mA;
2SB757
2SD847
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