SMD IC MARKING GP
Abstract: 2SC2404
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Optimum for RF amplification of FM/AM radios +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2SC2404
OT-23
SMD IC MARKING GP
2SC2404
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2SC1568
Abstract: 2SA900
Text: Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING
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2SC1568
O-126
2SA900
500mA
-50mA
200MHz
2SC1568
2SA900
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DS30514
Abstract: No abstract text available
Text: DPBT8105 1A PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating Complementary Version Available DNBT8105
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DPBT8105
DNBT8105)
AEC-Q101
J-STD-020D
MIL-STD-202,
DS30514
621-DPBT8105-7
DPBT8105-7
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Japanese Transistor Data Book
Abstract: No abstract text available
Text: Doc No. TT4-EA-14130 Revision . 2 Product Standards Bipolar Transistor DSAF00100L DSAF00100L Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSCF001 DSA3001 in ML3 type package 0.6 3 • Features 1.0 High forward current transfer ratio hFE with excellent linearity
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TT4-EA-14130
DSAF00100L
DSCF001
DSA3001
UL-94
Japanese Transistor Data Book
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2DC4672
Abstract: sot89 "NPN TRANSISTOR"
Text: 2DC4672 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available 2DA1797
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2DC4672
2DA1797)
OT89-3L
J-STD-020
MIL-STD-202,
DS31636
621-2DC4672-13
2DC4672-13
2DC4672
sot89 "NPN TRANSISTOR"
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DS31604
Abstract: DSS20200L
Text: DSS20200L LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage
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DSS20200L
DSS20201L)
OT-23
J-STD-020D
MIL-STD-202,
DS31604
621-DSS20200L-7
DSS20200L-7
DSS20200L
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DSCF005
Abstract: No abstract text available
Text: Doc No. TT4-EA-14131 Revision . 2 Product Standards Bipolar Transistor DSAF00500L DSAF00500L Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSCF005 DSA3005 in ML3 type package 0.6 3 • Features 1.0 High forward current transfer ratio hFE with excellent linearity
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TT4-EA-14131
DSAF00500L
DSCF005
DSA3005
UL-94
DSCF005
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LS5301
Abstract: No abstract text available
Text: LS5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The LS5301 is a very High Input Impedance N-Channel JFET amplifier The LS5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise.
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LS5301
LF5301
PF5301
LF5301
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RLC Filter Design
Abstract: ADS5121 MPA4609 MPA4609IPFBR MPA4609IPFBT OPA2846 TQFP-48 piezoelectric film sensor "Piezoelectric Sensor"
Text: MPA4609 MP A46 09 www.ti.com SBOS252E – AUGUST 2002 – REVISED DECEMBER 2008 Quad, Differential I/O, 2X1 Multiplexed High Gain Preamp FEATURES DESCRIPTION ● ● ● ● ● ● ● ● The MPA4609 is one of the lowest noise, fixed gain, 5V single-supply, differential amplifiers available for amplification of low-level signals in a variety of system applications.
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MPA4609
SBOS252E
MPA4609
RLC Filter Design
ADS5121
MPA4609IPFBR
MPA4609IPFBT
OPA2846
TQFP-48
piezoelectric film sensor
"Piezoelectric Sensor"
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2SB940
Abstract: 2SB940A
Text: JMnic Product Specification 2SB940,2SB940A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS ・For power amplification
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2SB940
2SB940A
O-220Fa
2SD1264/1264A
2SB940
-50mA
-200V;
2SB940A
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MMSTA55
Abstract: MMSTA56 J-STD-020A k2x transistor surface mount
Text: MMSTA55/MMSTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMSTA55 MMSTA56 Features • · · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMSTA05/MMSTA06 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package
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MMSTA55/MMSTA56
MMSTA55
MMSTA56
MMSTA05/MMSTA06)
OT-323
OT-323,
J-STD-020A
MIL-STD-202,
DS30167
MMSTA56
J-STD-020A
k2x transistor surface mount
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J-STD-020A
Abstract: MMST6427 MMST6427-7 MMST6427-7-F
Text: MMST6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR SPICE MODEL: MMST6427 Features • · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Ultra-Small Surface Mount Package Also Available in Lead Free Version
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MMST6427
OT-323
OT-323,
J-STD-020A
MIL-STD-202,
DS30166
J-STD-020A
MMST6427
MMST6427-7
MMST6427-7-F
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npn3904
Abstract: pnp3906 3906 PNP pnp 3906 spice 3906 NPN 3904 3904 ic MMDT3946 tr 3904 J-STD-020A
Text: MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMDT3946 Features • · · · · · Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
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MMDT3946
3904-Type
3906-Type
OT-363,
J-STD-020A
MIL-STD-202,
PNP-3906)
npn3904
pnp3906
3906 PNP
pnp 3906
spice 3906
NPN 3904
3904 ic
MMDT3946
tr 3904
J-STD-020A
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J-STD-020A
Abstract: MMST4124 MMST4126 MMST4126-7
Text: MMST4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMST4126 Features • · · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMST4124 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package
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MMST4126
MMST4124)
OT-323
OT-323,
J-STD-020A
MIL-STD-202,
DS30161
J-STD-020A
MMST4124
MMST4126
MMST4126-7
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K2X pnp
Abstract: K2X TO J-STD-020A MMBT4401 MMBT4401-7 MMBT4403
Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT4401 Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 A C Mechanical Data · · ·
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MMBT4401
MMBT4403)
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
MBT4401
DS30039
K2X pnp
K2X TO
J-STD-020A
MMBT4401
MMBT4401-7
MMBT4403
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2SB941
Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
Text: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION
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2SB941
2SB941A
O-220Fa
2SD1266/1266A
O-220Fa)
2SB941
2SB941 P
2sb941a
2SB941 Q
1266a
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2SC1847
Abstract: 2SA886
Text: JMnic Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SC1847
O-126
2SA886
200MHz
2SC1847
2SA886
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2SA1195
Abstract: 2SC2483
Text: JMnic Product Specification 2SA1195 Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・High power dissipation ・Complement to type 2SC2483 APPLICATIONS ・For high voltage and general purpose amplification PINNING see Fig.2 PIN DESCRIPTION
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2SA1195
O-202
2SC2483
O-202)
-500mA
-200mA
-150V;
-100mA
2SA1195
2SC2483
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J-STD-020A
Abstract: MMDT4124 MMDT4124-7 MMDT4126
Text: MMDT4124 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT4124 Features • · · · · A Epitaxial Planar Die Construction Complementary PNP Type Available MMDT4126 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package
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MMDT4124
MMDT4126)
OT-363,
J-STD-020A
MIL-STD-202,
DS30164
J-STD-020A
MMDT4124
MMDT4124-7
MMDT4126
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723da
Abstract: SNS512 SN7514L
Text: LINEAR INTEGRATED CIRCUITS TYPES SN5S12, SN5514. SN7512. SN7514 DIFFERENTIAL VIDEO AMPLIFIERS B U L L E T IN N O . D L -S 7 3 1 1496, A U G U S T 1 9 7 1 - R E V IS E D S E P T E M B E R 1973 • 80-MHz Bandwidth • Typical Differential Voltage Amplification of 300
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80-MHz
SN5S12,
SN5514.
SN7512.
SN7514
SN5512
SIM7512
SN7512,
723da
SNS512
SN7514L
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25275
Abstract: No abstract text available
Text: TE X A S IN S T R { L I N / I N T F O T s D Ê| 0033=127 TELECOM CIRCUITS r 3 T-75-11-37 TCM2101/2 PCM REPEATER DECEMBER 1982 Features GND M • • • • • • • PCM Signal amplification Two ALBO taps High Q or Low Q clock extraction Decision time adjustment
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T-75-11-37
TCM2101/2
ALB01
ALB02
25275
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fe 5571
Abstract: KS 0302
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB
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2SC5183
SC-61
2SG5183-T1
2SC5183-T2
fe 5571
KS 0302
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MH88617AV-PI
Abstract: No abstract text available
Text: MH88617 <§> MITEL Programmable SLIC with Advance Information Ringing Amplification ISSUE 2 Features • • Fully programmable line impedance,network balance impedance and gains. Programmable loop current with long loop capability 2-4 Wire conversion. Power down and wake up.
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MH88617
MH88617AV-P
MH88617AD-P
MH88617AS-P
MH88617AV-PI
MH88617AD-PI
2//680nF
150nF
b24q370
G0133bb
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nec 13772
Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p
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2SC5182
SC-59
2SC5182-T1
2SC5182-T2
nec 13772
transistor NEC b 882
transistor NEC D 882 p
nec d 882 p transistor transistor
transistor NEC b 882 p
nec 0882 p 2
sem 2107
71/MT 6351 bm
71/71/MT 6351 bm
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