Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AMP. 100 WATT FET Search Results

    AMP. 100 WATT FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    AMP. 100 WATT FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power Management Group RADIATION HARDENED ISOLATED DC/DC CONVERTERS SA50-120-5/15T 50 Watts Total Power +5Vdc±15Vdc Triple Output Microsemi Power Management Group PMG multiple decades of fault free heritage complex custom (radiation hardened) switching power design and systems


    Original     		PDF SA50-120-5/15T 15Vdc 100kRad SA50-120-5-15T

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization


    Original     		PDF PCD1287CT P220ECT 1-877-GOLDMOS 1522-PTF

    Amp. mosfet 1000 watt

    Abstract: transformer less power supply 12 volt 3A 1000 watt ferrite transformer mathcad flyback design Amp. mosfet 500 watt mosfet 1000 amper transistor m 9587 Diode fast 8 amper RM6S/CSVS-RM6S/LP-1S-8P Switchmode power supply handbook
    Text: SWITCHING POWER SUPPLY DESIGN: CONTINUOUS MODE FLYBACK CONVERTER Written by Michele Sclocchi michele.sclocchi@nsc.com Application Engineer National Semiconductor Typical Flyback power supply: D4 N=18T C10 220p R5 10 16V D2 R1 49.9K N=6T D5 D3 Q1 20 - 55V N=18T


    Original     		PDF LM5000-3 1000p LM5000 50kHz Amp. mosfet 1000 watt transformer less power supply 12 volt 3A 1000 watt ferrite transformer mathcad flyback design Amp. mosfet 500 watt mosfet 1000 amper transistor m 9587 Diode fast 8 amper RM6S/CSVS-RM6S/LP-1S-8P Switchmode power supply handbook

    transistor 603

    Abstract: transistor smd 303 circuit diagram of rfid gate SLD-2083
    Text: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at


    Original     		PDF SLD-2083CZ SLD-2083CZ 2700MHz. EDS-103754 RF083 transistor 603 transistor smd 303 circuit diagram of rfid gate SLD-2083

    transistor smd 303

    Abstract: LL1608-F4N7K CONNECTOR SMA 905 drawing SLD-2083 0603CS delta LL1608-F2N7S 80021 Amp. 100 watt fet pot 100K smd SLD-2083CZ
    Text: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at


    Original     		PDF SLD-2083CZ SLD-2083CZ 2700MHz. EDS-103754 RF083 transistor smd 303 LL1608-F4N7K CONNECTOR SMA 905 drawing SLD-2083 0603CS delta LL1608-F2N7S 80021 Amp. 100 watt fet pot 100K smd

    SLD-2083CZ

    Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
    Text: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features „ „ „ 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz


    Original     		PDF SLD-2083CZ RF083 SLD-2083CZ SLD2083CZ 600S120FT250XT 600S6R8BT250XT 0603CS-16NXJB 0603CS-1N6XJB 0603CS-4N7XJB 915 MHz RFID GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2

    SLD-1083CZ

    Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
    Text: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features „ „ „ 4 Watt Output P1dB Single Polarity Supply Voltage


    Original     		PDF SLD-1083CZ RF083 SLD-1083CZ SLD1083CZ 600S680JT250XT T494D106M035AS ECJ2YB1H104K ERJ-3EKF3240V ERJ6GEY0R00V GaN Bias 25 watt InP transistor HEMT 600S680JT250XT

    4712 mosfet

    Abstract: Amp. mosfet 500 watt 50 Amp 100 volt mosfet 300 watt mosfet amplifier mosfet 4712 switching power supply design 50 Watt MOSFET amplifier mathcad buck INDUCTOR DESIGN AN-1197 LM5642
    Text: SWITCHING POWER SUPPLY DESIGN: PWM Current Mode, Dual Synchronous Buck Converter: LM5642 Michele Sclocchi michele.sclocchi@nsc.com National Semiconductor Notes: Write down the power supply requirements on : Get the results on: Xxx := Rsults xx := This Mathcad file helps the calculation of the external components dual synchronous buck


    Original     		PDF LM5642 LM5642 LM2633 AN-1292 AN-1197 4712 mosfet Amp. mosfet 500 watt 50 Amp 100 volt mosfet 300 watt mosfet amplifier mosfet 4712 switching power supply design 50 Watt MOSFET amplifier mathcad buck INDUCTOR DESIGN

    SLD3091FZ

    Abstract: T85 55
    Text: Preliminary SLD-3091FZ Pb RoHS Compliant & Green Package 30 Watt Discrete LDMOS FET in Ceramic Flanged Package Product Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 1600MHz. It is an


    Original     		PDF SLD-3091FZ SLD-3091FZ 1600MHz. 30reliminary EDS-104668 SLD3091FZ T85 55

    915 MHz RFID

    Abstract: 22UF 27PF SLD-3091FZ t85 key SLD3091FZ SLD3091
    Text: Preliminary SLD-3091FZ Pb RoHS Compliant & Green Package 30 Watt Discrete LDMOS FET in Ceramic Flanged Package Product Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 2200MHz. It is an


    Original     		PDF SLD-3091FZ SLD-3091FZ 2200MHz. EDS-104668 915 MHz RFID 22UF 27PF t85 key SLD3091FZ SLD3091

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 180 Watts, 2110-2170 MHz PTF 102022* Description Key Features The PTF 102022 is a 180–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double-diffused push-pull FET, it operates with 13.5 dB linear gain. Full gold metallization


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    SLD-3091FZ

    Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
    Text: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features „ „ „ 30 Watt Output P1dB


    Original     		PDF SLD-3091FZ SLD-3091FZ EDS-104668 SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF

    Untitled

    Abstract: No abstract text available
    Text: SA50-28 Triple Series RADIATION HARDENED ISOLATED DC/DC CONVERTERS SA50-28-5-15T 50 Watts Total Power 5V, +/- 12Vdc, Triple Output DESCRIPTION The SA series of DC-DC converters are designed for the rigors of space, characterized for Total Ionizing Dose and Single Event Effects. Operating at a fixed frequency of 220


    Original     		PDF SA50-28 SA50-28-5-15T 12Vdc, 100kRad

    ad6451

    Abstract: SO108
    Text: a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 ␮V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package


    Original     		PDF OPA-111 OPA-121 AD645 AD645 3500ppm/ C1398a ad6451 SO108

    Untitled

    Abstract: No abstract text available
    Text: BACK a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 ␮V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package


    Original     		PDF OPA-111 OPA-121 AD645 AD645 3500ppm/ C1398a

    Q81, 1K, 3500 ppm

    Abstract: c1398 op amp ad645 AD645JN 8c 617 transistor AD645 AD645A AD645B AD645C AD645J
    Text: a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 ␮V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package


    Original     		PDF AD645 OPA-111 OPA-121 AD645 Q81, 1K, 3500 ppm c1398 op amp ad645 AD645JN 8c 617 transistor AD645A AD645B AD645C AD645J

    MYXJ11200-34CAB

    Abstract: silicon carbide
    Text: Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB Product Overview Features y r a in Benefits • High voltage 1200V • Low on resistance RDS On • High current 34A • Voltage controlled • High temperature 175°C • Low gate charge


    Original     		PDF MYXJ11200-34CAB MIL-PRF-19500 MYXJ11200-34CAB silicon carbide

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 45 Watts, 2110-2170 MHz Description Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110-2170 MHz. This device typically operates at 47% efficiency at P-1dB with a linear gain of


    Original     		PDF 84MHz, 10MHz 15MHz 480mA, 14GHz 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ Low Power, Low Noise Precision FET Op Amp AD795 FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op Amp and Tl TLC 2201 Low Noise 2.5 JiV p-p max, 0.1 Hz to 10 Hz 10 n V /V H z max at 10 kHz 0.6 fA /V H z at 1 kHz High DC Accuracy


    OCR Scan     		PDF AD795 OPA-111, OPA-121 AD796

    AD796

    Abstract: 7915 pin configuration AD795 AD795K AD79S AD795B AD795BH AD795AH Q81, 1K, 3500 ppm 2265 8pin
    Text: ANALOG DEVICES INC 51E » A N A LO G D E V IC E S OaibfiOO 0Q3bl32 b4b • ANA Low Power, Low Noise Precision FET Op Amp AD795 □ FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op A m p and Tl TLC 2201 Low Noise 2.5 JiV p -p m ax, 0.1 Hz to 10 Hz


    OCR Scan     		PDF 003fc AD795 OPA-111, OPA-121 AD796 7915 pin configuration AD795K AD79S AD795B AD795BH AD795AH Q81, 1K, 3500 ppm 2265 8pin

    AD796

    Abstract: AD796AN
    Text: ANALOG DEVICES □ Dual Low Power, Low Cost, Precision FET Op Amp AD796 FEATURES Low Noise 2.5 jj.V p-p max, 0.1 Hz to 10 Hz 10 n V /V H z max at 10 kHz 14 fA p-p Current Noise 0.1 Hz to 10 Hz High DC Accuracy 300 n.V max Offset Voltage 3 jlV / ° C max Drift


    OCR Scan     		PDF AD796 AD796 AD796AN AD796BN AD796AR AD796SQ-883B

    Untitled

    Abstract: No abstract text available
    Text: Low Noise, Low Drift FET Op Amp ANALOG DEVICES FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 |iV p-p max, 0.1 Hz to 10 Hz 10 n V /V fiz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS 8-Pin Plastic Mini-DIP


    OCR Scan     		PDF OPA-111 OPA-121 MIL-STD-883B AD645

    Untitled

    Abstract: No abstract text available
    Text: Low Noise, Low Drift FET Op Amp ANALOG DEVICES FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 |¿V p -p max, 0.1 Hz to 10 Hz 10 n V /V fiz max at 10 kHz 11 f A p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS 8-Pio Plastic Mini-DIP


    OCR Scan     		PDF OPA-111 OPA-121 MIL-STD-883B AD645